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Patent US4404736A successfully refreshed from Google Patents.
US4404736A
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US
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Method for manufacturing a semiconductor device of mesa type
Assignee: Toshiba Corp
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Filing: 1981-11-09
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Granted: 1983-09-20
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Expires: 2001-11-09
Abstract
Abstract A method for manufacturing a semiconductor device of mesa type comprises forming mesa recesses of predetermined depth around an element in the surface of a semiconductor body, forming on the back of semiconductor body a film for lessening the concentration of stress, filling glass powder into mesa recesses, and sintering glass powder to form glass insulators. According to the method of the present invention, cracks can be prevented from being caused in the semiconductor body and glass insulators formed in mesa recesses.
Inventors
- 👤 Yutaka Koshino
- 👤 Takashi Ajima
- 👤 Jiro Ohshima
- 👤 Masahiro Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10P14/69; H10P14/6903; H10P14/6905; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/134; H10W74/137; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/085; Y10S148/159; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
62 words
A method for manufacturing a semiconductor device of mesa type comprising: forming mesa recesses of predetermined depth around a semiconductor element in one surface of a semiconductor body; forming only on the entire opposite surface of said semiconductor body a film for lessening the concentration of stress; filling glass powder into said mesa recesses; and sintering glass powder to form glass insulators.
Claim 2
Independent Claim
62 words
A method for manufacturing a semiconductor device of mesa type comprising: forming mesa recesses of predetermined depth around a semiconductor element in one surface of a semiconductor body; forming only on the entire opposite surface of said semiconductor body a film for lessening the concentration of stress; filling glass powder into said mesa recesses; and sintering glass powder to form glass insulators.
Claim 3
Dependent Claim
28 words
A method for manufacturing a semiconductor device of mesa type according to claim 1 wherein said film for lessening the concentration of stress is made of silicon nitride.
Claim 4
Dependent Claim
28 words
A method for manufacturing a semiconductor device of mesa type according to claim 1 wherein said film for lessening the concentration of stress is made of silicon carbide.
Claim 5
Independent Claim
128 words
A method for forming glass insulators in a semiconductor device of the mesa type during the manufacture of the device comprising the steps of: (1) coating on one surface of a semiconductor body a film of a material tending to contract in film form; (2) bending said semiconductor body into a concave arc under the contraction of said film; (3) forming mesa recesses in the opposite surface of said semiconductor body, the lateral surfaces of said recesses diverging outwardly from the bottom of said recesses to the surface of said semiconductor body opposite said film; (4) filling said mesa recesses with glass powder; (5) sintering said glass powder to form glass insulators; and (6) removing said film to allow the semiconductor body to return to its planar state.
Claim 6
Independent Claim
128 words
A method for forming glass insulators in a semiconductor device of the mesa type during the manufacture of the device comprising the steps of: (1) coating on one surface of a semiconductor body a film of a material tending to contract in film form; (2) bending said semiconductor body into a concave arc under the contraction of said film; (3) forming mesa recesses in the opposite surface of said semiconductor body, the lateral surfaces of said recesses diverging outwardly from the bottom of said recesses to the surface of said semiconductor body opposite said film; (4) filling said mesa recesses with glass powder; (5) sintering said glass powder to form glass insulators; and (6) removing said film to allow the semiconductor body to return to its planar state.
Claim 7
Dependent Claim
13 words
The method of claim 4 wherein said film is made of silicon nitride.
Claim 8
Dependent Claim
13 words
The method of claim 4 wherein said film is made of silicon carbide.
Claim 9
Independent Claim
107 words
A method for forming glass insulators in a semiconductor device of the mesa type during the manufacture of the device comprising the steps of: (1) forming mesa recesses in a semiconductor body; (2) coating on one surface of a semiconductor body a film of a material tending to contract in film form; (3) bending said semiconductor body into a concave arc under the contraction of said film; (4) filling said mesa recesses with glass powder; (5) sintering said glass powder to form glass insulators; and (6) removing said film to allow the semiconductor body to return to its planar state not earlier than said step of filling.
Claim 10
Independent Claim
107 words
A method for forming glass insulators in a semiconductor device of the mesa type during the manufacture of the device comprising the steps of: (1) forming mesa recesses in a semiconductor body; (2) coating on one surface of a semiconductor body a film of a material tending to contract in film form; (3) bending said semiconductor body into a concave arc under the contraction of said film; (4) filling said mesa recesses with glass powder; (5) sintering said glass powder to form glass insulators; and (6) removing said film to allow the semiconductor body to return to its planar state not earlier than said step of filling.
Claim 11
Dependent Claim
13 words
The method of claim 7 wherein said film is made of silicon nitride.
Claim 12
Dependent Claim
13 words
The method of claim 7 wherein said film is made of silicon carbide.
References Cited (Backward Citations)
JPS55117242A
Cited
US4335501A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1986-09-19 | 1987-03-21 | 1987-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-19 | 1991-03-21 | 1991-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-19 | 1995-03-21 | 1995-09-20 | $7700.00 | Window Closed / Lapsed |