Patent US4404076A successfully refreshed from Google Patents.
US4404076A
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Film forming process utilizing discharge
Assignee: Canon Inc
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Filing: 1982-08-27
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Granted: 1983-09-13
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Expires: 2002-08-27
Abstract
Abstract A film forming process comprising introducing gas for forming a film from an inlet part for gas into a pressure-reducible deposition chamber wherein a substrate for forming a film thereon is supported by a fixing member, at least one of said substrate and fixing member are used so as to act as a first electrode, at least one portion of the wall of said deposition chamber is employed so as to act as a second electrode, the surface of said second electrode is arranged substantially in parallel to the surface for forming a film thereon, of said substrate, and said inlet part for gas and an outlet part for gas are arranged substantially in the positional relationship of rotation symmetry; and generating a glow discharge in said deposition chamber, thereby forming a film on said substrate.
Inventors
- 👤 Katsumi Nakagawa
- 👤 Tadaji Fukada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:32
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/62; B05D7/00; B05D7/24; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5093; B05D7/50; B05D7/56
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
149 words
A film forming process utilizing glow discharge which comprises positioning a drum shaped substrate for forming a film on a fixing member in a pressure-reducible deposition chamber so that a film-forming surface of the substrate is substantially parallel to a discharge surface of an electrode which is spaced around the substrate; reducing the pressure in the deposition chamber to a predetermined pressure; introducing a gas containing a source of silicon for forming an amorphous silicon film into said deposition chamber from a gas inlet, directing said stream substantially perpendicular to the central axis of said substrate; generating a glow discharge between said electrode and said substrate to decompose said gas and to form at least a substantially uniform film of the resulting amorphous silicon on the film forming surface of the substrate and exhausting unused gas from said deposition chamber through a gas outlet opposed to said gas inlet.
Claim 2
Dependent Claim
149 words
A film forming process utilizing glow discharge which comprises positioning a drum shaped substrate for forming a film on a fixing member in a pressure-reducible deposition chamber so that a film-forming surface of the substrate is substantially parallel to a discharge surface of an electrode which is spaced around the substrate; reducing the pressure in the deposition chamber to a predetermined pressure; introducing a gas containing a source of silicon for forming an amorphous silicon film into said deposition chamber from a gas inlet, directing said stream substantially perpendicular to the central axis of said substrate; generating a glow discharge between said electrode and said substrate to decompose said gas and to form at least a substantially uniform film of the resulting amorphous silicon on the film forming surface of the substrate and exhausting unused gas from said deposition chamber through a gas outlet opposed to said gas inlet.
Claim 3
Dependent Claim
29 words
The film forming process according to claim 1 including the step of slowly rotating said substrate during the formation of the film to insure a film of uniform thickness.
Claim 4
Dependent Claim
29 words
The film forming process according to claim 1 in which said gas contains both a source of silicon and a source of hydrogen for forming an amorphous hydrogenated film.
Claim 5
Dependent Claim
15 words
The film forming process according to claim 3 in which the gas is silane gas.
Claim 6
Dependent Claim
160 words
A film forming process utilizing glow discharge which comprises positioning a drum shaped substrate for forming a film on a fixing member in a pressure-reducible deposition chamber so that a film-forming surface of the surface is substantially parallel to a discharge surface of an electrode which is spaced around the substrate; reducing the pressure in the deposition chamber to a predetermined pressure; introducing a gas containing a source of silicon for forming an amorphous silicon film into said deposition chamber from a plurality of gas inlets; directing said gas stream substantially perpendicular to the central axis of said substrate; exhausting unused gas from said deposition chamber through a plurality of gas outlets, each said gas outlets diametrically opposed to a corresponding gas inlet; and generating a glow discharge between said electrode and said substrate to decompose said gas and to form at least a substantially uniform film of the resulting amorphous silicon on the film forming surface of the substrate.
Claim 7
Dependent Claim
160 words
A film forming process utilizing glow discharge which comprises positioning a drum shaped substrate for forming a film on a fixing member in a pressure-reducible deposition chamber so that a film-forming surface of the surface is substantially parallel to a discharge surface of an electrode which is spaced around the substrate; reducing the pressure in the deposition chamber to a predetermined pressure; introducing a gas containing a source of silicon for forming an amorphous silicon film into said deposition chamber from a plurality of gas inlets; directing said gas stream substantially perpendicular to the central axis of said substrate; exhausting unused gas from said deposition chamber through a plurality of gas outlets, each said gas outlets diametrically opposed to a corresponding gas inlet; and generating a glow discharge between said electrode and said substrate to decompose said gas and to form at least a substantially uniform film of the resulting amorphous silicon on the film forming surface of the substrate.
Claim 8
Dependent Claim
23 words
The film forming process according to claim 1 in which the flow rate of the gas in the deposition chamber is 20-300 ml/min.
References Cited (Backward Citations)
US3068510A
Cited
US3179618A
Cited
US3475307A
Cited
US3471316A
Cited
US3600122A
Cited
US3473459A
Cited
US3730863A
Cited
US4064521A
Cited
US4317844A
Cited
US4282265A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-12 | 1987-03-14 | 1987-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-12 | 1991-03-14 | 1991-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-12 | 1995-03-14 | 1995-09-13 | $7700.00 | Window Closed / Lapsed |