Patent US4403151A successfully refreshed from Google Patents.
US4403151A
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US
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Method of forming patterns
Assignee: Hitachi Ltd
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Filing: 1981-04-02
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Granted: 1983-09-06
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Expires: 2001-04-02
Abstract
Abstract Desired portions of the positive-type photoresist film are irradiated with an electron beam, and regions including at least the regions irradiated with the electron beam are further irradiated with ultraviolet light, followed by developing. The photosensitive radicals are destroyed in the regions which are irradiated with the electron beam. Therefore, the solubility of the photoresist film is not increased even when it is irradiated with ultraviolet light, and resist patterns are formed by developing.
Inventors
- 👤 Kozo Mochiji
- 👤 Yozi Maruyama
- 👤 Shinji Okazaki
- 👤 Fumio Murai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:22
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/7045; G03F7/004; G03F7/039; G03F7/20; G03F7/2022; H; H05; H05K; H05K3/00; H05K3/0073; H05K3/0082; H05K3/02; H05K3/06; H05K3/061; H05K3/064; Y; Y10; Y10S; Y10S430/00; Y10S430/143
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
157 words
A method of forming patterns comprising: (1) a step of adhering a positive-type photoresist film onto a layer that is to be processed; (2) a step for irradiating predetermined regions of said positive-type photoresist film with an electron beam, said electron beam having a sufficient intensity to destroy the photosensitive radicals of said positive-type photoresist film in the predetermined regions, whereby said predetermined regions are rendered insensitive to ultraviolet light; (3) a step for irradiating regions of the photoresist film with ultraviolet light, said regions including at least the regions of said positive-type photoresist film irradiated with the electron beam; (4) a step for developing said positive-type photoresist film, and removing the regions irradiated with ultraviolet light only, to form a resist pattern; (5) a step for removing the exposed portions of said layer that is to be processed by the etching using said resist patterns as masks; and (6) a step for removing said resist patterns.
Claim 2
Independent Claim
157 words
A method of forming patterns comprising: (1) a step of adhering a positive-type photoresist film onto a layer that is to be processed; (2) a step for irradiating predetermined regions of said positive-type photoresist film with an electron beam, said electron beam having a sufficient intensity to destroy the photosensitive radicals of said positive-type photoresist film in the predetermined regions, whereby said predetermined regions are rendered insensitive to ultraviolet light; (3) a step for irradiating regions of the photoresist film with ultraviolet light, said regions including at least the regions of said positive-type photoresist film irradiated with the electron beam; (4) a step for developing said positive-type photoresist film, and removing the regions irradiated with ultraviolet light only, to form a resist pattern; (5) a step for removing the exposed portions of said layer that is to be processed by the etching using said resist patterns as masks; and (6) a step for removing said resist patterns.
Claim 3
Dependent Claim
22 words
A method of forming patterns according to claim 1, wherein whole surfaces of said photoresist film are irradiated with the ultraviolet light.
Claim 4
Dependent Claim
26 words
A method of forming patterns according to claim 2, wherein the intensity of said electron beam is about 1×10 -6 to 1×10 -4 coulomb/cm 2 .
Claim 5
Dependent Claim
39 words
A method of forming patterns according to claim 2 or 3, wherein said photoresist film is heated at about 100° to 140° C. after it is exposed to the ultraviolet light but prior to being subjected to the developing.
Claim 6
Dependent Claim
23 words
A method of forming patterns according to claim 1, wherein predetermined regions of said photoresist film are selectively irradiated with the ultraviolet light.
Claim 7
Dependent Claim
26 words
A method of forming patterns according to claim 5, wherein the intensity of said electron beam is about 1×10 -6 to 1×10 -4 coulomb/cm 2 .
Claim 8
Dependent Claim
40 words
A method of forming patterns according to claim 5 or 6, wherein said photoresist film is heated at about 100° C. to 140° C. after it is exposed to the ultraviolet light but prior to being subjected to the developing.
Claim 9
Dependent Claim
29 words
A method of forming patterns according to claim 1, wherein said step for removing the exposed portions of said layer that is to be processed is a dry-etching step.
Claim 10
Dependent Claim
34 words
A method of forming patterns according to claim 2 or 5, wherein said photoresist film is heated at about 60°-90° C. prior to said step for irradiating predetermined regions of said positive-type photoresist film.
Claim 11
Dependent Claim
34 words
A method of forming patterns according to claim 2 or 5, wherein the resist pattern, after the step for developing but before said step for removing, is baked at a temperature of 90°-100° C.
Claim 12
Dependent Claim
26 words
A method of forming patterns according to claim 1, wherein the intensity of said electron beam is about 1×10 -6 to 1×10 -4 coulomb/cm 2 .
Claim 13
Dependent Claim
26 words
A method of forming patterns according to claim 11, wherein the intensity of said electron beam is about 1×10 -5 to 5×10 -5 coulomb/cm 2 .
References Cited (Backward Citations)
US4099062A
Cited
US4298803A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-05 | 1987-03-07 | 1987-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-05 | 1991-03-07 | 1991-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-05 | 1995-03-07 | 1995-09-06 | $7700.00 | Window Closed / Lapsed |