Patent US4402997A successfully refreshed from Google Patents.
US4402997A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for improving nitride deposition on a semiconductor wafer by purging deposition tube with oxygen
Assignee: Motorola Solutions Inc
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Filing: 1982-05-17
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Granted: 1983-09-06
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Expires: 2002-05-17
Abstract
Abstract In a process for depositing nitride on semiconductor wafers in a tube, streaks can develop on the wafers. The streaks are eliminted by flowing oxygen through the tube between nitride depositions of different groups of wafers.
Inventors
- 👤 Richard H. Hogan
- 👤 Jonathan C. Dahm
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
70 words
In a manufacturing process for depositing nitride on a semiconductor wafer, comprising the steps of: placing the wafer in a heated tube; introducing ammonia and dichlorosilane into the tube to deposit nitride on said wafer; clearing the ammonia and dichlorosilane from the tube; and removing the wafer from the tube; the improvement comprising the additional step of: purging the tube with oxygen before placing the wafer in the heated tube.
Claim 2
Dependent Claim
70 words
In a manufacturing process for depositing nitride on a semiconductor wafer, comprising the steps of: placing the wafer in a heated tube; introducing ammonia and dichlorosilane into the tube to deposit nitride on said wafer; clearing the ammonia and dichlorosilane from the tube; and removing the wafer from the tube; the improvement comprising the additional step of: purging the tube with oxygen before placing the wafer in the heated tube.
Claim 3
Dependent Claim
70 words
In a manufacturing process for depositing nitride on a semiconductor wafer, comprising the steps of: placing the wafer in a heated tube; introducing ammonia and dichlorosilane into the tube to deposit nitride on said wafer; clearing the ammonia and dichlorosilane from the tube; and removing the wafer from the tube; the improvement comprising the additional step of: purging the tube with oxygen after removing the wafer from the heated tube.
Claim 4
Dependent Claim
70 words
In a manufacturing process for depositing nitride on a semiconductor wafer, comprising the steps of: placing the wafer in a heated tube; introducing ammonia and dichlorosilane into the tube to deposit nitride on said wafer; clearing the ammonia and dichlorosilane from the tube; and removing the wafer from the tube; the improvement comprising the additional step of: purging the tube with oxygen after removing the wafer from the heated tube.
Claim 5
Dependent Claim
105 words
In a manufacturing process for consecutively subjecting groups of semiconductor wafers to nitride deposition in a heated tube wherein each group of semiconductor wafer is subjected to a nitride deposition process step, comprising: inserting the first group to receive nitride into the tube; introducing ammonia and dichlorosilane into the tube whereby nitride is formed and deposited on the semiconductor wafers of the first group; clearing the tube of ammonia and dichlorosilane; and removing the first group from the tube; the improvement comprising: introducing oxygen into the tube after removal of the first group to purge the tube before inserting the next group into the tube.
Claim 6
Dependent Claim
105 words
In a manufacturing process for consecutively subjecting groups of semiconductor wafers to nitride deposition in a heated tube wherein each group of semiconductor wafer is subjected to a nitride deposition process step, comprising: inserting the first group to receive nitride into the tube; introducing ammonia and dichlorosilane into the tube whereby nitride is formed and deposited on the semiconductor wafers of the first group; clearing the tube of ammonia and dichlorosilane; and removing the first group from the tube; the improvement comprising: introducing oxygen into the tube after removal of the first group to purge the tube before inserting the next group into the tube.
Claim 7
Dependent Claim
41 words
In a manufacturing process for depositing nitride on semiconductor wafers in a tube, the step of purging the deposition tube with oxygen between each use of the tube to provide semiconductor wafers which are clear of spots of excessive nitride growth.
Claim 8
Dependent Claim
41 words
In a manufacturing process for depositing nitride on semiconductor wafers in a tube, the step of purging the deposition tube with oxygen between each use of the tube to provide semiconductor wafers which are clear of spots of excessive nitride growth.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-05 | 1987-03-07 | 1987-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-05 | 1991-03-07 | 1991-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-05 | 1995-03-07 | 1995-09-06 | $7700.00 | Window Closed / Lapsed |