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US4400800A
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US
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Semiconductor RAM device
Assignee: Fujitsu Ltd
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Filing: 1980-11-26
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Granted: 1983-08-23
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Expires: 2000-11-26
Abstract
Abstract A static type semiconductor RAM device comprising a latch circuit at every column which detects, amplifies and temporarily memorizes a read-out signal from each of the memory cells in the corresponding column and which has a large drive capacity. In the static type RAM device according to the present invention, each of the memory cells is used as an element which only holds information, and data bus lines are driven by the latch circuits having a large drive capacity, so that the slow down of the read-out speed and the decrease of reliability of read-out data of the static type RAM device having a large memory capacity is prevented.
Inventors
- 👤 Setsuo Kurafuji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:23
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C11/417; G11C11/419; G11C11/412
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
238 words
A semiconductor RAM device having a matrix of rows corresponding to word lines and columns corresponding to bit lines, and static type memory cells, respective of the static type memory cells operatively connected at corresponding of the cross points of said matrix, a row decoder having outputs respectively, operatively connected to corresponding ones of said rows; a column decoder having outputs respectively, operatively connected to corresponding ones of said columns; each of said static type memory cells being selected by the respective output from the row decoder and the respective output from the column decoder and generating a data signal in response to being selected, said semiconductor RAM device comprising: amplifier circuits, having activated and non-activated states, respective of said amplifier circuits operatively connected to corresponding of said bit lines, for amplifying the data signal from a selected one of said static type memory cells associated with said corresponding bit lines, and gate circuits having activated and non-activated states, respective of said gate circuits operatively connected between said corresponding bit lines and said respective amplifier circuits, said gate circuits being activated for a first specified period after a respective memory cell is selected by said output from said row decoder and said output from said column decoder and passing the data signal from said respective memory cell to said corresponding amplifier circuit, said amplifier circuit being selectively activated for a second specified period after said first specified period.
Claim 2
Dependent Claim
238 words
A semiconductor RAM device having a matrix of rows corresponding to word lines and columns corresponding to bit lines, and static type memory cells, respective of the static type memory cells operatively connected at corresponding of the cross points of said matrix, a row decoder having outputs respectively, operatively connected to corresponding ones of said rows; a column decoder having outputs respectively, operatively connected to corresponding ones of said columns; each of said static type memory cells being selected by the respective output from the row decoder and the respective output from the column decoder and generating a data signal in response to being selected, said semiconductor RAM device comprising: amplifier circuits, having activated and non-activated states, respective of said amplifier circuits operatively connected to corresponding of said bit lines, for amplifying the data signal from a selected one of said static type memory cells associated with said corresponding bit lines, and gate circuits having activated and non-activated states, respective of said gate circuits operatively connected between said corresponding bit lines and said respective amplifier circuits, said gate circuits being activated for a first specified period after a respective memory cell is selected by said output from said row decoder and said output from said column decoder and passing the data signal from said respective memory cell to said corresponding amplifier circuit, said amplifier circuit being selectively activated for a second specified period after said first specified period.
Claim 3
Dependent Claim
96 words
A semiconductor RAM device as set forth in claim 1, wherein said semiconductor RAM device further comprises: a detector circuit, operatively connected to corresponding of said gate circuits, for receiving input address signals and for detecting a potential change of at least one of the input address signals, and for providing a gate signal in response to said detecting; and a delay circuit, operatively connected between said detector circuit and said corresponding of said gate circuits, for delaying said gate signal from said detector circuit, for providing an output signal and for activating said gate circuits.
Claim 4
Dependent Claim
57 words
A semiconductor RAM device as set forth in claim 2, wherein said delay circuit delays said gate signal for a time approximately equal to the time for said output signal from said row decoder to propagate from said row decoder to the memory cell connected at the end of a word line farthest from said row decoder.
Claim 5
Dependent Claim
26 words
A semiconductor RAM device as set forth in claim 3, wherein said amplifier circuits are activated in response to said output signal from said column decoder.
Claim 6
Dependent Claim
26 words
A semiconductor RAM device as set forth in claim 2, wherein said amplifier circuits are activated in response to said output signal from said column decoder.
Claim 7
Dependent Claim
31 words
A semiconductor RAM device as set forth in claims 1, 2, 3, 5 or 4, wherein said amplifier circuits comprise latch circuits, each latch circuit including a pair of driver transistors.
Claim 8
Dependent Claim
50 words
A semiconductor RAM device as set forth in claim 6, wherein each memory cell includes a driver transistor having a drive capacity, and wherein each of said driver transistors of said latch circuits has a larger drive capacity than the drive capacity of said driver transistors of the memory cells.
Claim 9
Dependent Claim
46 words
A semiconductor RAM device as set forth in claim 7, wherein each memory cell driver transistor has a predetermined size, and each of said driver transistors of said latch circuits has a bigger size than said predetermined size of said driver transistors of the memory cells.
Claim 10
Dependent Claim
33 words
A semiconductor RAM device as set forth in claim 7, wherein said drive capacity of said memory cell driver transistors is selected to drive only said respective column and said respective gate circuit.
References Cited (Backward Citations)
US4125878A
Cited
US4255678A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-22 | 1987-02-21 | 1987-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-22 | 1991-02-21 | 1991-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-22 | 1995-02-21 | 1995-08-23 | $7700.00 | Window Closed / Lapsed |