US4400256A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making layered semiconductor laser
Assignee: Individual
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Filing: 1981-12-18
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Granted: 1983-08-23
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Expires: 2001-12-18
Abstract
Abstract A method for making a thin film layered semiconductor laser which includes depositing layers of semiconductor and electrical lead materials on an undoped semiconductor substrate and heating each layer of the semiconductor material after it has been deposited to improve crystallinity of the deposited semiconductor material and to improve interfaced continuity of the material at the lasing interface and at the electrical conductor to semiconductor interface, and after the desired number of layers of semiconductor and electrical lead materials have been deposited, cutting and polishing the ends of the laser device and finally placing a non-conductive dielectric reflecting surface on one of the polished end surfaces of the laser.
Inventors
- 👤 Leon H. Riley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:23
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H01; H01S; H01S5/00; H01S5/02; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/10; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4043; Y; Y10; Y10S; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
143 words
A method of making a layered semiconductor laser diode, comprising providing a semiconductor substrate, depositing a first layer of an electrical conductor on a portion of a surface of said semiconductor substrate by sputtering metal onto said semiconductor substrate, sputtering a layer of first semiconductor material over a portion of said first electrical conductor and a portion of said semiconductor substrate, heat treating said sputtered layer of first semiconductor material to improve crystallinity of said first semiconductor material, sputtering a layer of a second semiconductor material of a different type from said first semiconductor material over a portion of said first semiconductor material, heat treating said second semiconductor material to improve crystallinity of said second semiconductor material, and sputtering a second layer of an electrical conductor material over said second semiconductor material to form a laser junction with first and second electrical leads.
Claim 2
Independent Claim
143 words
A method of making a layered semiconductor laser diode, comprising providing a semiconductor substrate, depositing a first layer of an electrical conductor on a portion of a surface of said semiconductor substrate by sputtering metal onto said semiconductor substrate, sputtering a layer of first semiconductor material over a portion of said first electrical conductor and a portion of said semiconductor substrate, heat treating said sputtered layer of first semiconductor material to improve crystallinity of said first semiconductor material, sputtering a layer of a second semiconductor material of a different type from said first semiconductor material over a portion of said first semiconductor material, heat treating said second semiconductor material to improve crystallinity of said second semiconductor material, and sputtering a second layer of an electrical conductor material over said second semiconductor material to form a laser junction with first and second electrical leads.
Claim 3
Dependent Claim
97 words
A method of making a layered semiconductor laser as set forth in claim 1, wherein additional layers of semiconductor materials are sputtered as layers over said conductors and semiconductor materials with like layers of semiconductor materials being interconnected by the sputtering process, by each layer of the semiconductor material being heat treated to improve crystallinity of the sputtered semiconductor material, and by sputtering an additional metal electrical conductor over each two layers of semiconductor materials and over a portion of the selected first or second conductor to form an interleaved elongated P-N junction with interleaved conductor layers.
Claim 4
Dependent Claim
48 words
A method of making a layered semiconductor laser device as set forth in claim 2, wherein the laser device is cut at opposite ends to form smooth surfaces, polishing each of said smooth surfaces, and mounting a nonconductive dielectric reflecting surface on one of said polished end surfaces.
Claim 5
Dependent Claim
45 words
A method of making a layered semiconductor laser as set forth in claim 3, and including the step of heat treating the last sputtered metal electrical conductor to improve electrical continuity between the last sputtered metal electrical conductor and the last sputtered semiconductor material layer.
Claim 6
Dependent Claim
45 words
A method of making a layered semiconductor laser as set forth in claim 2, and including the step of heat treating the last sputtered metal electrical conductor to improve electrical continuity between the last sputtered metal electrical conductor and the last sputtered semiconductor material layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-22 | 1987-02-21 | 1987-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-22 | 1991-02-21 | 1991-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-22 | 1995-02-21 | 1995-08-23 | $7700.00 | Window Closed / Lapsed |