← Back to Patent Explorer
US4399015A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for fabricating an indium tin oxide film for a transparent electrode

Assignee: Sharp Corp
•
Filing: 1982-02-01
•
Granted: 1983-08-16
•
Expires: 2002-02-01
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method for fabricating an indium tin oxide (ITO) film comprises depositing the ITO film on a heat-resisting substrate by sputtering using a metal alloy target of In-Sn in an atmosphere including an active gas, and heat-treating the ITO film at about 550-650 degrees Centigrade in an oxygen-free atmosphere. Preferably, the heat-resisting substrate comprises an aluminoborosilicate glass. Further, sputtering, preferably reactive sputtering, is employed.

Inventors

  • 👤 Yoshihiro Endo
  • 👤 Yoshito Yamashita
  • 👤 Hiroshi Kishishita
  • 👤 Hisashi Uede

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 09:52
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/086; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/245; C03C17/2453; C23C14/58; C23C14/5806; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1343; G02F1/13439

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 58 words
A method for fabricating an indium tin oxide (ITO) film, comprising: depositing the ITO film on a heated substrate which is heat-resistant by sputtering using a metal alloy target of In-Sn in an atmosphere including an active gas having a moderate partial pressure of oxygen; and heat-treating the ITO film at about 550°-650° C. in an oxygen-free atmosphere.
Claim 2
Independent Claim 58 words
A method for fabricating an indium tin oxide (ITO) film, comprising: depositing the ITO film on a heated substrate which is heat-resistant by sputtering using a metal alloy target of In-Sn in an atmosphere including an active gas having a moderate partial pressure of oxygen; and heat-treating the ITO film at about 550°-650° C. in an oxygen-free atmosphere.
Claim 3
Dependent Claim 13 words
The method of claim 1, wherein the heat-resistant substrate comprises an aluminoborosilicate glass.
Claim 4
Dependent Claim 17 words
The method of claim 1, wherein the sputtering of the ITO film is effected by reaction sputtering.
Claim 5
Dependent Claim 19 words
The method of claim 3, wherein the sputtering of the ITO film is effected by D.C. planar magnetron sputtering.
Claim 6
Dependent Claim 9 words
A product produced by the method of claim 1.
Claim 7
Dependent Claim 9 words
A product produced by the method of claim 2.
Claim 8
Dependent Claim 9 words
A product produced by the method of claim 3.
Claim 9
Dependent Claim 9 words
A product produced by the method of claim 4.
Claim 10
Dependent Claim 13 words
The method of claim 1, wherein the active gas includes argon and oxygen.
Claim 11
Dependent Claim 19 words
The method of claim 1, wherein the partial pressure of oxygen is about 1×10 -4 to 1×10 -3 Torr.

References Cited (Backward Citations)

US3749658A Cited
US4010291A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-08-15 1987-02-14 1987-08-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-08-15 1991-02-14 1991-08-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-08-15 1995-02-14 1995-08-16 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag