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US4010291A
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Method of making a low resistance indium oxide conductive film
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1975-10-20
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Granted: 1977-03-01
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Expires: 1995-10-20
Abstract
Abstract A low resistance indium oxide conductive film is made on a substrate in an atmosphere for vacuum evaporation or sputtering where aqueous vapor or gas mixed with the vapor is introduced or wherein aqueous vapor is generated, by reactive vacuum evaporation or sputtering in said atmosphere using indium oxide or metallic indium as starting material.
Inventors
- 👤 Yoshiyuki Katsube
- 👤 Shizuko Katsube
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:07
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/228; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/245; C23C14/0021; C23C14/0036; C23C14/06; C23C14/08; C23C14/086; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/215; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/152; C03C2218/154; C03C2218/155
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
44 words
A method of making low resistance indium oxide conductive films on a substrate by a vacuum evaporation or sputtering process using indium oxide or metallic indium as starting material in a chamber having an atmosphere comprising aqueous vapor or gas mixed with aqueous vapor.
Claim 2
Independent Claim
44 words
A method of making low resistance indium oxide conductive films on a substrate by a vacuum evaporation or sputtering process using indium oxide or metallic indium as starting material in a chamber having an atmosphere comprising aqueous vapor or gas mixed with aqueous vapor.
Claim 3
Dependent Claim
50 words
A method as described in claim 1 whereby the atmosphere for vacuum evaporation or sputtering has a partial pressure of aqueous vapor of about 1 × 10 - 5 ˜ 10 - 3 Torr, preferably 5 × 10 - 5 ˜ 1 × 10 - 4 Torr, in nitrogen conversion.
Claim 4
Dependent Claim
19 words
A method as claimed in claim 1 wherein the aqueous vapor is introduced into the chamber from external means.
Claim 5
Dependent Claim
18 words
A method as claimed in claim 1 wherein the aqueous vapor is generated in situ in the chamber.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-02-29 | 1980-08-30 | 1981-03-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-02-29 | 1984-08-30 | 1985-03-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-02-29 | 1988-08-30 | 1989-03-01 | $7700.00 | Window Closed / Lapsed |