US4398142A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Kelvin-connected buried zener voltage reference circuit
Assignee: Intersil Corp
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Filing: 1981-10-09
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Granted: 1983-08-09
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Expires: 2001-10-09
Abstract
Abstract An improved voltage reference circuit is provided comprising a series combination of a Kelvin-connected buried zener diode and a transistor. The collector of the transistor is connected to the first anode of the diode while the base of the transistor is connected to the second anode of the diode. This connection provides compensation for temperature and voltage variations in the zener diode caused by anode parasitic resistances and external temperature changes.
Inventors
- 👤 James D. Beasom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:42
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/18; Y; Y10; Y10S; Y10S323/00; Y10S323/907
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
70 words
A voltage reference circuit comprising: a buried zener diode having first and second anodes and a cathode, said first and second anodes having inherent parasitic resistances; and a transistor having a base, collector, and emitter, said collector connected to said first anode, said base connected to said second anode, said transistor serving to compensate for voltage variations in said zener diode caused by said parasitic resistances and external temperature changes.
Claim 2
Dependent Claim
70 words
A voltage reference circuit comprising: a buried zener diode having first and second anodes and a cathode, said first and second anodes having inherent parasitic resistances; and a transistor having a base, collector, and emitter, said collector connected to said first anode, said base connected to said second anode, said transistor serving to compensate for voltage variations in said zener diode caused by said parasitic resistances and external temperature changes.
Claim 3
Dependent Claim
34 words
A voltage reference circuit as described in claim 1 wherein said buried zener diode has a P-type buried layer and an N-type surface layer such that the PN junction of said diode is buried.
Claim 4
Dependent Claim
17 words
A voltage reference circuit as described in claim 2 wherein said transistor is an NPN bipolar transistor.
Claim 5
Dependent Claim
34 words
A voltage reference circuit as described in claim 1 wherein said buried zener diode has an N-type buried layer and a P-type surface layer such that the PN junction of said diode is buried.
Claim 6
Dependent Claim
17 words
A voltage reference circuit as described in claim 4 wherein said transistor is a PNP bipolar transistor.
Claim 7
Dependent Claim
31 words
A voltage reference circuit as described in claim 1 wherein said buried zener diode and said transistor are formed on the same monolithic chip to improve the sensitivity of said circuit.
Claim 8
Dependent Claim
30 words
A voltage reference circuit as described in claim 1 wherein said transistor and said buried zener diode have opposite temperature coefficients to compensate said circuit for said external temperature changes.
Claim 9
Dependent Claim
23 words
A voltage reference circuit as described in claim 1 wherein said first anode has a lower inherent parasitic resistance than said second anode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-08 | 1987-02-07 | 1987-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-08 | 1991-02-07 | 1991-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-08 | 1995-02-07 | 1995-08-09 | $7700.00 | Window Closed / Lapsed |