US4398094A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Equipment and method for annealing semiconductors
Assignee: USHIO DENKI A CORP OF JAPAN KK
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Filing: 1980-12-31
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Granted: 1983-08-09
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Expires: 2000-12-31
Abstract
Abstract A semiconductor is annealed by an equipment which comprises a short-arc type rare gas discharge lamp as a heat source possessing the condition, 140≧P×l≧16, where l (mm) is the distance between an anode and a cathode and P is the sealed gas pressure (atmospheric pressure) at room temperature (25° C.), an optical system for converging emitted light from the gas discharge lamp in the required manner, a power source unit capable of controlling the emitted light of the gas discharge lamp, and a stage for mounting the semiconductor. With this equipment, the semiconductor crystal is satisfactorily restored from damages incidental to ion implantation and a polycrystalline or amorphous semiconductor is converted into a good single crystal semiconductor.
Inventors
- 👤 Tatsumi Hiramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:18
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P34/422; C; C30; C30B; C30B1/00; C30B1/02; C30B33/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
107 words
A (semiconductor annealing) equipment comprising: (a) a short-arc type rare gas discharge lamp having an anode, cathode, and a sealed gas pressure with the condition, 140≧P×l≧16, where l (mm) is the distance between the anode and cathode and P is the sealed gas pressure (atmospheric pressure) at room temperature (25° C.); (b) optical means for converging emitted light from the short-arc type rare gas discharge lamp to irradiate the surface of a semiconductor; (c) power source means for controlling the intensity of the emitted light of the short-arc type rare gas discharge lamp; and (d) a stage for mounting the semiconductor to be irradiated by the lamp.
Claim 2
Dependent Claim
107 words
A (semiconductor annealing) equipment comprising: (a) a short-arc type rare gas discharge lamp having an anode, cathode, and a sealed gas pressure with the condition, 140≧P×l≧16, where l (mm) is the distance between the anode and cathode and P is the sealed gas pressure (atmospheric pressure) at room temperature (25° C.); (b) optical means for converging emitted light from the short-arc type rare gas discharge lamp to irradiate the surface of a semiconductor; (c) power source means for controlling the intensity of the emitted light of the short-arc type rare gas discharge lamp; and (d) a stage for mounting the semiconductor to be irradiated by the lamp.
Claim 3
Independent Claim
138 words
A method for annealing a semiconductor by applying to its surface irradiated light ccomprising the steps of: (a) mounting a semiconductor onto a stage; (b) emitting light of a wavelength in the range of 2000 to 12000 A from a short-arc type rare gas discharge lamp which possesses the condition, 140≧P×l≧16, where l (mm) is the distance between an anode and a cathode and P is the sealed gas pressure (atmospheric pressure) at room temperature (25° C.); (c) converging the emitted light from the short-arc type rare gas discharge lamp through optical means to irradiate the surface of the stage-mounted semiconductor; and (d) controlling the intensity of the emitted light of the short-arc type rare gas discharge lamp to apply an energy of 45 joules/cm 2 or more of the emitted light to the surface of the semiconductor.
Claim 4
Independent Claim
138 words
A method for annealing a semiconductor by applying to its surface irradiated light ccomprising the steps of: (a) mounting a semiconductor onto a stage; (b) emitting light of a wavelength in the range of 2000 to 12000 A from a short-arc type rare gas discharge lamp which possesses the condition, 140≧P×l≧16, where l (mm) is the distance between an anode and a cathode and P is the sealed gas pressure (atmospheric pressure) at room temperature (25° C.); (c) converging the emitted light from the short-arc type rare gas discharge lamp through optical means to irradiate the surface of the stage-mounted semiconductor; and (d) controlling the intensity of the emitted light of the short-arc type rare gas discharge lamp to apply an energy of 45 joules/cm 2 or more of the emitted light to the surface of the semiconductor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-08 | 1987-02-07 | 1987-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-08 | 1991-02-07 | 1991-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-08 | 1995-02-07 | 1995-08-09 | $7700.00 | Window Closed / Lapsed |