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US4397933A
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Hydrogenated amorphous silicon photoconductive layer
Assignee: Canon Inc
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Filing: 1981-09-15
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Granted: 1983-08-09
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Expires: 2001-09-15
Abstract
Abstract The hydrogenated amorphous silicon photoconductive layer has an infrared spectrum containing a peak at 880±10 cm -1 (intensity of this peak being referred to as I A ) and a peak at 970±10 cm -1 (intensity of this peak being referred to as I B ) in the infrared spectrum, the ratio I A /I B , being not more than 1.0.
Inventors
- 👤 Masao Sugata
- 👤 Masaki Fukaya
- 👤 Takashi Nakagiri
- 👤 Takaaki Yamagata
- 👤 Yutaka Hirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 11:07
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/10; G03G5/104; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
93 words
A hydrogenated amorphous silicon photoconductive layer formed on a support, said layer exhibiting infrared absorption peaks at 880±10 cm -1 corresponding to a normalized mode of a bending mode of an SiH 2 bond and having an intensity I A and at 970±10 cm -1 corresponding to the overlap of a peak of a normalized mode of a deformation mode of an SiH bond and a peak which an Si-O bond is concerned and having an intensity I B , wherein the ratio, I A /I B , is not more than 1.0.
Claim 2
Dependent Claim
93 words
A hydrogenated amorphous silicon photoconductive layer formed on a support, said layer exhibiting infrared absorption peaks at 880±10 cm -1 corresponding to a normalized mode of a bending mode of an SiH 2 bond and having an intensity I A and at 970±10 cm -1 corresponding to the overlap of a peak of a normalized mode of a deformation mode of an SiH bond and a peak which an Si-O bond is concerned and having an intensity I B , wherein the ratio, I A /I B , is not more than 1.0.
Claim 3
Dependent Claim
24 words
A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I A /I B , is not more than 0.9.
Claim 4
Dependent Claim
24 words
A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I A /I B , is not more than 0.8.
Claim 5
Dependent Claim
25 words
A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I A /I B , is in the range of 0.2-1.0.
Claim 6
Dependent Claim
25 words
A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I A /I B , is in the range of 0.3-0.9.
Claim 7
Dependent Claim
25 words
A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I A /I B , is in the range of 0.4-0.9.
Claim 8
Dependent Claim
18 words
A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which said support is a conductive support.
Claim 9
Dependent Claim
18 words
A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which said support is an insulating support.
Claim 10
Dependent Claim
27 words
A hydrogenated amorphous silicon photoconductive layer according to claim 8 in which said insulating support has a conductive coating thereon on which said photoconductive layer is formed.
References Cited (Backward Citations)
US4147667A
Cited
US4217374A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-08 | 1987-02-07 | 1987-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-08 | 1991-02-07 | 1991-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-08 | 1995-02-07 | 1995-08-09 | $7700.00 | Window Closed / Lapsed |