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US4396705A Expired / Lapsed US ⏱️ 0.0 years remaining

Pattern forming method and pattern forming apparatus using exposures in a liquid

Assignee: Hitachi Ltd
•
Filing: 1981-09-18
•
Granted: 1983-08-02
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Expires: 2001-09-18
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Abstract

Abstract A pattern forming method comprising a step of disposing a substrate with a coated film of photosensitive composition and a mask having a predetermined pattern in a first liquid which does not dissolve said coated film of photosensitive composition, and a step of exposing said coated film to light through said mask. An apparatus for attaining this method is also disclosed. The influence of dust can be readily avoided and an image with high resolution is obtained.

Inventors

  • 👤 Masamoto Akeyama
  • 👤 Yoshifumi Tomita
  • 👤 Saburo Nonogaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 10:19
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/708; G03F7/70858; G03F7/70866; G03F7/20; G03F7/2041; G03F7/26; G03F7/30; H; H10; H10P; H10P95/00

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 125 words
A pattern forming method comprising a step of disposing a substrate with a coated film of photoresist forming photosensitive composition and a mask having a predetermined pattern in a first liquid which does not dissolve said coated film of photoresist forming photosensitive composition; a step of exposing said coated film to light through said mask with said coated film and said mask being disposed in said first liquid; and a step of moving said substrate with said coated film after exposure into a second liquid that is in contact with said first liquid, is not miscible with the first liquid, and has a developing effect to said coated film of photosensitive composition, said substrate being moved into the second liquid to develop said film therein.
Claim 2
Dependent Claim 125 words
A pattern forming method comprising a step of disposing a substrate with a coated film of photoresist forming photosensitive composition and a mask having a predetermined pattern in a first liquid which does not dissolve said coated film of photoresist forming photosensitive composition; a step of exposing said coated film to light through said mask with said coated film and said mask being disposed in said first liquid; and a step of moving said substrate with said coated film after exposure into a second liquid that is in contact with said first liquid, is not miscible with the first liquid, and has a developing effect to said coated film of photosensitive composition, said substrate being moved into the second liquid to develop said film therein.
Claim 3
Dependent Claim 23 words
A pattern forming without method according to claim 1, wherein said first liquid is circulated through a filter to keep said liquid clean.
Claim 4
Dependent Claim 18 words
A pattern forming method according to claim 1, wherein said first liquid is kept at a constant temperature.
Claim 5
Dependent Claim 23 words
A pattern forming method according to claim 1, further comprising a step of disposing said second liquid in contact with said first liquid.
Claim 6
Dependent Claim 23 words
A pattern forming method according to claim 4, wherein said first liquid is circulated through a filter to make said first liquid clean.
Claim 7
Dependent Claim 18 words
A pattern forming method according to claim 4, wherein said first liquid is kept at a constant temperature.
Claim 8
Dependent Claim 26 words
A pattern forming method according to claim 1 or 4, wherein the specific gravity of said second liquid is smaller than that of said first liquid.
Claim 9
Dependent Claim 26 words
A pattern forming method according to claim 1 or 4, wherein the specific gravity of said second liquid is larger than that of said first liquid.
Claim 10
Dependent Claim 24 words
A pattern forming method according to claim 1 or 4, wherein said photoresist forming photosensitive composition is a negative working photoresist forming photosensitive composition.
Claim 11
Dependent Claim 14 words
A pattern forming method according to claim 9, wherein said first liquid is water.
Claim 12
Dependent Claim 24 words
A pattern forming method according to claim 1 or 4, wherein said photoresist forming photosensitive composition is a positive working photoresist forming photosensitive composition.
Claim 13
Dependent Claim 25 words
A pattern forming method according to claim 11, wherein said first liquid is selected from the group consisting of trichlorotrifluoroethane, carbon tetrachloride, benzene, and chlorobenzene.
Claim 14
Dependent Claim 15 words
A pattern forming method according to claim 1, wherein said substrate is a silicon wafer.
Claim 15
Dependent Claim 35 words
A pattern forming method according to claim 1, wherein said second liquid is a solvent for removing the coated film in either the exposed or unexposed regions of the coated film to develop said film.

References Cited (Backward Citations)

US3434835A Cited
US3573975A Cited
US3664738A Cited
US3732120A Cited
EP0023231A1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-08-01 1987-01-31 1987-08-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-08-01 1991-01-31 1991-08-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-08-01 1995-01-31 1995-08-02 $7700.00 Window Closed / Lapsed

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