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US4396456A
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US
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Method of peeling epilayers
Assignee: Individual
•
Filing: 1981-12-21
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Granted: 1983-08-02
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Expires: 2001-12-21
Abstract
Abstract A method is disclosed for peeling thin epitaxially grown crystalline layers (epilayers) from the substrates on which they have been grown. A thin layer of single-crystal is epitaxially grown on a substrate, where material at the interface of the epilayer and the substrate has a lower melting point temperature than does the epilayer. Heat is added to the lower melting point temperature material in order to liquify at least part of it. A voltage is applied between the epilayer and an adjacent structure in order to develop an electrical force on the epilayer to facilitate peeling of the epilayer away from the substrate.
Inventors
- 👤 Melvin S. Cook
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:46
CPC Classifications
C; C30; C30B; C30B33/00; Y; Y10; Y10S; Y10S117/00; Y10S117/915
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
83 words
A method of peeling a crystalline layer from a substrate, material at the interface of said substrate and said crystalline layer having a lower melting point temperature than that of said crystalline layer, comprising the steps of heating said material at said interface such that at least part of said material at said interface liquifies, and peeling said crystalline layer from said substrate at said liquified material by developing an electric force on said crystalline layer at the region of said liquified material.
Claim 2
Independent Claim
83 words
A method of peeling a crystalline layer from a substrate, material at the interface of said substrate and said crystalline layer having a lower melting point temperature than that of said crystalline layer, comprising the steps of heating said material at said interface such that at least part of said material at said interface liquifies, and peeling said crystalline layer from said substrate at said liquified material by developing an electric force on said crystalline layer at the region of said liquified material.
Claim 3
Dependent Claim
22 words
A method in accordance with claim 1 wherein said electric force is developed by an electric field acting on said crystalline layer.
Claim 4
Dependent Claim
40 words
A method in accordance with claim 2 wherein said electric field is developed by connecting an electric field generator between said substrate and an electrically conductive structure positioned adjacent to but separated from said crystalline layer at said liquified material.
References Cited (Backward Citations)
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Cited
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-01 | 1987-01-31 | 1987-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-01 | 1991-01-31 | 1991-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-01 | 1995-01-31 | 1995-08-02 | $7700.00 | Window Closed / Lapsed |