← Back to Patent Explorer
US4395481A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for the manufacture of resist structures

Assignee: Siemens AG
•
Filing: 1981-09-25
•
Granted: 1983-07-26
•
Expires: 2001-09-25
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 μm thick by means of UV rays in the wave-length range between about 180 to 260 nm.

Inventors

  • 👤 Siegfried Birkle
  • 👤 Roland Rubner
  • 👤 Hans Hauschildt
  • 👤 Eva-Maria Rissel

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 02:47
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; G05; G05F; G05F1/00; G05F1/10; G05F1/46; G05F1/56; G05F1/577

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 92 words
In a method for the manufacture of resist structures on the basis of positive resists wherein a polymer material in the form of a layer or film is exposed with a predetermined pattern to short-wave UV rays and the exposed portions of the layer or film thereafter removed, the improvement wherein the polymer material comprises a copolymer of: (a) 1 to 70 mol percent alkylmethacrylate with an alkyl radical having 1 to 4 C atoms; and (b) 30 to 99 mol percent of an ethylenically unsaturated monomer having chlorine and/or cyan substituents.
Claim 2
Dependent Claim 92 words
In a method for the manufacture of resist structures on the basis of positive resists wherein a polymer material in the form of a layer or film is exposed with a predetermined pattern to short-wave UV rays and the exposed portions of the layer or film thereafter removed, the improvement wherein the polymer material comprises a copolymer of: (a) 1 to 70 mol percent alkylmethacrylate with an alkyl radical having 1 to 4 C atoms; and (b) 30 to 99 mol percent of an ethylenically unsaturated monomer having chlorine and/or cyan substituents.
Claim 3
Dependent Claim 17 words
The method according to claim 1 wherein said polymer material is a copolymer of methylmethacrylate and methyl-α-chloroacrylate.
Claim 4
Dependent Claim 17 words
The method according to claim 1 wherein said polymer material is a copolymer of methylmethacrylate and methyl-α-cyanoacrylate.

References Cited (Backward Citations)

US4011351A Cited
JPS5441207A Cited
US4273856A Cited
US4268607A Cited
JPS55140836A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-07-25 1987-01-24 1987-07-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-07-25 1991-01-24 1991-07-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-07-25 1995-01-24 1995-07-26 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag