Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
220 words
In a semiconductor laser: a terraced semiconductor substrate (9) which has a thicker part and a thinner part with a step inbetween, semiconductor layers (10, 11, 12) including an active layer (11) formed on said terraced semiconductor substrate (9) in a manner to have an inclined part (111) ranging from the position above said step to the part shifted to the side of said thinner part, an overriding layer (13) having the opposite conductivity type to that of the uppermost layer (12) of said semiconductor layers (10, 11, 12) and formed on said uppermost layer (12), characterized by further comprising: a last layer (14) having the same conductivity type to that of the overriding layer (13) formed on the latter layer (13), said last layer (14) having a stripe-shaped through-opening (141) at the position which is a shifted position from the part immediately above said inclined part (111), thereby exposing a surface of said overriding layer (13) at the bottom of the through-opening (141), a conduction region (15) formed at least on the bottom and side faces of said stripe-shaped opening, in a manner to reach and contact said uppermost layer (12), a first electrode layer formed to contact to said conduction layer in said through-opening and a second electrode formed on the bottom face of said terraced semiconductor substrate.
Claim 2
Dependent Claim
220 words
In a semiconductor laser: a terraced semiconductor substrate (9) which has a thicker part and a thinner part with a step inbetween, semiconductor layers (10, 11, 12) including an active layer (11) formed on said terraced semiconductor substrate (9) in a manner to have an inclined part (111) ranging from the position above said step to the part shifted to the side of said thinner part, an overriding layer (13) having the opposite conductivity type to that of the uppermost layer (12) of said semiconductor layers (10, 11, 12) and formed on said uppermost layer (12), characterized by further comprising: a last layer (14) having the same conductivity type to that of the overriding layer (13) formed on the latter layer (13), said last layer (14) having a stripe-shaped through-opening (141) at the position which is a shifted position from the part immediately above said inclined part (111), thereby exposing a surface of said overriding layer (13) at the bottom of the through-opening (141), a conduction region (15) formed at least on the bottom and side faces of said stripe-shaped opening, in a manner to reach and contact said uppermost layer (12), a first electrode layer formed to contact to said conduction layer in said through-opening and a second electrode formed on the bottom face of said terraced semiconductor substrate.
Claim 3
Dependent Claim
23 words
A semiconductor laser in accordance with claim 1, wherein said first electrode (16) is bonded by a solder onto a heat sink (18).
Claim 4
Dependent Claim
16 words
A semiconductor laser in accordance with claim 1, wherein said second clad layer (12) is GaAlAs.
Claim 5
Dependent Claim
21 words
A semiconductor laser in accordance with claim 1, wherein said overriding layer (13) and said last layer (14) has different composition.
Claim 6
Dependent Claim
18 words
A semiconductor laser in accordance with claim 1, wherein said conduction layer (15) is a Zn diffused region.
Claim 7
Dependent Claim
14 words
A semiconductor laser in accordance with claim 1, wherein said active layer is GaAlAs.
Claim 8
Dependent Claim
13 words
A semiconductor laser in accordance with claim 1, wherein said substrate is GaAs.
Claim 9
Dependent Claim
17 words
A semiconductor laser in accordance with claim 1, wherein said second electrode has a wire bonded thereto.
Claim 10
Dependent Claim
23 words
A semiconductor laser in accordance with claim 2, wherein said solder is a low temperature metal and said heat sink is of copper.
Claim 11
Dependent Claim
20 words
A semiconductor laser in accordance with claim 4, wherein said overriding layer is GaAs and said last layer is GaAlAs.