US4389295A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film phosphor sputtering process
Assignee: Osram Sylvania Inc
•
Filing: 1982-05-06
•
Granted: 1983-06-21
•
Expires: 2002-05-06
Abstract
Abstract A process and associated system for forming a thin film phosphor layer which is comprised of a host substance doped with an activator and which layer is formed by a sputtering process. Heat is applied to the substrate to elevate the temperature thereof while maintaining a vacuum in the sputtering chamber. The substrate is supported for movement in the chamber. Sputtering is accomplished within the chamber by causing a sputtering gas to flow therein while concurrently exciting host and activator targets to form a plasma in the chamber and maintaining this sputtering for a predetermined period of time.
Inventors
- 👤 Ernest Davey
- 👤 Lawrence L. Hope
- 👤 Charles E. Deschenes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:13
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/20; H01J9/22; H01J9/221
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
111 words
A process for forming a thin film phosphor layer comprised of a heat substance doped with an activator, said phosphor layer being formed on a substrate in the making of an electroluminescent display device, comprising the steps of: providing a phosphor chamber having targets of respective host substance and activator, applying heat to said substrate to elevate the temperature thereof while maintaining a vacuum in the chamber, supporting and rotating or translating the substrate in the chamber, initiating sputtering within the chamber by causing a sputtering gas to flow therein while concurrently exciting said targets to form a plasma in said chamber, and maintaining the sputtering for a period of time.
Claim 2
Dependent Claim
111 words
A process for forming a thin film phosphor layer comprised of a heat substance doped with an activator, said phosphor layer being formed on a substrate in the making of an electroluminescent display device, comprising the steps of: providing a phosphor chamber having targets of respective host substance and activator, applying heat to said substrate to elevate the temperature thereof while maintaining a vacuum in the chamber, supporting and rotating or translating the substrate in the chamber, initiating sputtering within the chamber by causing a sputtering gas to flow therein while concurrently exciting said targets to form a plasma in said chamber, and maintaining the sputtering for a period of time.
Claim 3
Dependent Claim
25 words
A process as set forth in claim 1 including providing a carrier for the substrate and rotating the carrier at a predetermined speed of rotation.
Claim 4
Dependent Claim
24 words
A process as set forth in claim 1 including providing a carrier for the substrate and moving the carrier translationally at a predetermined speed.
Claim 5
Dependent Claim
24 words
A process as set forth in claim 1 wherein said sputtering gas comprises an inert gas pre-mixed with a small percentage of hydrogen sulfide.
Claim 6
Dependent Claim
20 words
A process as set forth in claim 4 wherein said small percentage is on the order of 1.5% to 10%.
Claim 7
Dependent Claim
18 words
A process as set forth in claim 1 wherein said targets are respectively of zinc sulfide and manganese.
Claim 8
Dependent Claim
17 words
A process as set forth in claim 1 wherein the gas flow is at a predetermined rate.
Claim 9
Dependent Claim
18 words
A process as set forth in claim 7 wherein said rate is on the order of 130 sccm.
Claim 10
Dependent Claim
20 words
A process as set forth in claim 1 wherein the sputtering time period is on the order of thirty minutes.
Claim 11
Dependent Claim
18 words
A process as set forth in claim 1 including sputtering a dielectric layer prior to the phosphor layer.
Claim 12
Dependent Claim
21 words
A process as set forth in claim 1 including rotating the substrate at a rate on the order of 30 RPM.
Claim 13
Dependent Claim
30 words
A process as set forth in claim 1 including translational motion at a rate on the order of 0.5 inch per second past the target in single or multiple passes.
Claim 14
Dependent Claim
21 words
A process as set forth in claim 1 wherein heat is applied at a temperature on the order of 300° C.
Claim 15
Dependent Claim
17 words
A process as set forth in claim 1 wherein said targets are commonly excited by RF energy.
Claim 16
Dependent Claim
16 words
A process as set forth in claim 1 wherein electrical bias is applied to the substrate.
Claim 17
Independent Claim
109 words
A system for forming a thin film phosphor layer comprised of a host substance doped with an activator, said phosphor layer being formed on a substrate in the making of an electroluminescent display device, comprising: a phosphor chamber; targets associated with the chamber and of respective host substance and activator; means maintaining a vacuum in the chamber; a heat source associated with the chamber for heating the substrate; a carrier for the substrate; means for rotating or translating the carrier to assure uniformity of exposure of the substrate to the targets; means for introducing a sputtering gas into the chamber to produce sputtering; and means for exciting said targets.
Claim 18
Independent Claim
109 words
A system for forming a thin film phosphor layer comprised of a host substance doped with an activator, said phosphor layer being formed on a substrate in the making of an electroluminescent display device, comprising: a phosphor chamber; targets associated with the chamber and of respective host substance and activator; means maintaining a vacuum in the chamber; a heat source associated with the chamber for heating the substrate; a carrier for the substrate; means for rotating or translating the carrier to assure uniformity of exposure of the substrate to the targets; means for introducing a sputtering gas into the chamber to produce sputtering; and means for exciting said targets.
Claim 19
Dependent Claim
24 words
A system as set forth in claim 16 wherein said sputtering gas comprises an inert gas pre-mixed with a small percentage of hydrogen sulfide.
Claim 20
Dependent Claim
26 words
A system as set forth in claim 17 wherein said inert gas includes argon and said small percentage is on the order of 1.5% to 10%.
Claim 21
Dependent Claim
18 words
A system as set forth in claim 16 wherein said targets are respectively of zinc sulfide and manganese.
Claim 22
Dependent Claim
17 words
A system as set forth in claim 16 wherein the gas flow is at a predetermined rate.
Claim 23
Dependent Claim
18 words
A system as set forth in claim 20 wherein said rate is on the order of 130 sccm.
Claim 24
Dependent Claim
20 words
A system as set forth in claim 16 wherein the sputtering time period is on the order of 30 minutes.
Claim 25
Dependent Claim
25 words
A system as set forth in claim 16 wherein said means for rotating rotates the substrate at a rate on the order of 30 RPM.
Claim 26
Dependent Claim
36 words
A system as set forth in claim 16 wherein said means for translating the substrate provides motion past the target at a rate on the order of 0.5 inch per second in single or multiple passes.
References Cited (Backward Citations)
US3515663A
Cited
US3775285A
Cited
US3787312A
Cited
US3793167A
Cited
US3884787A
Cited
US4248687A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-06-20 | 1986-12-20 | 1987-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-20 | 1990-12-20 | 1991-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-20 | 1994-12-20 | 1995-06-21 | $7700.00 | Window Closed / Lapsed |