Patent US4388382A successfully refreshed from Google Patents.
US4388382A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoelectrochemical cells
Assignee: AT&T Inc
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Filing: 1981-02-13
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Granted: 1983-06-14
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Expires: 2001-02-13
Abstract
Abstract Photovoltaic devices are fabricated by forming a thin passivating layer, for example, an oxide layer on a semiconductor material. The passivating layer on the semiconductor material is then contacted with an electrolyte such as an electrolyte containing vanadium ions. The resulting electrolyte/passivating layer/semiconductor (EPLS) structure exhibits excellent solar conversion efficiencies and good stability.
Inventors
- 👤 Klaus J. Bachmann
- 👤 Hans-Joachim Lewerenz
- 👤 Maria T. A. S. Menezes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:57
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/20; H01M; H01M14/00; H01M14/005
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
112 words
A device comprising an electrolyte, a semiconductor electrode, and means for electrically contacting said electrolyte and said semiconductor electrode characterized in that a passivating layer is formed on said semiconductor electrode by a process comprising a cyclic electrolyte technique, wherein said passivating layer is continuous, and is sufficiently thin so that tunneling of electrons through said passivating layer is allowed, wherein the energy difference between the Fermi level and the majority carrier band of said semiconductor material is smaller than the energy difference at infinite separation between said majority carrier band and the redox level of said electrolyte, and whereby when light is absorbed in said semiconductor material electrical power is generated.
Claim 2
Independent Claim
112 words
A device comprising an electrolyte, a semiconductor electrode, and means for electrically contacting said electrolyte and said semiconductor electrode characterized in that a passivating layer is formed on said semiconductor electrode by a process comprising a cyclic electrolyte technique, wherein said passivating layer is continuous, and is sufficiently thin so that tunneling of electrons through said passivating layer is allowed, wherein the energy difference between the Fermi level and the majority carrier band of said semiconductor material is smaller than the energy difference at infinite separation between said majority carrier band and the redox level of said electrolyte, and whereby when light is absorbed in said semiconductor material electrical power is generated.
Claim 3
Dependent Claim
11 words
The device of claim 1 wherein said semiconductor material is InP.
Claim 4
Dependent Claim
15 words
The device of claim 1 or 2 wherein said passivating layer is a native film.
Claim 5
Dependent Claim
13 words
The device of claim 3 wherein said native film is a native oxide.
Claim 6
Dependent Claim
11 words
The device of claim 3 wherein said electrolyte contains vanadium ions.
Claim 7
Dependent Claim
11 words
The device of claim 1 wherein said electrolyte contains vanadium ions.
Claim 8
Dependent Claim
17 words
The device of claim 1 wherein said passivating layer is formed in an electrolyte containing vanadium ions.
Claim 9
Dependent Claim
16 words
The device of claim 1 wherein said means for contacting said electrolyte is a platinum electrode.
References Cited (Backward Citations)
US4343870A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-06-13 | 1986-12-13 | 1987-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-13 | 1990-12-13 | 1991-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-13 | 1994-12-13 | 1995-06-14 | $7700.00 | Window Closed / Lapsed |