US4387013A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reactive sputter etching of aluminum
Assignee: Intersil Corp
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Filing: 1981-08-24
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Granted: 1983-06-07
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Expires: 2001-08-24
Abstract
Abstract An improved sputter etching apparatus for etching a substrate with a reactive gas. The improvement in the apparatus comprises utilizing a cryogenic pump as the vacuum means to evacuate the plasma chamber. The improved apparatus of the invention is particularly useful for the reactive sputter etching of aluminum substrates utilizing a highly reactive gas such as boron trichloride.
Inventors
- 👤 Hans W. Lehmann
- 👤 Klaus Frick
- 👤 Roland W. Widmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:02
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32816; H01J37/32834; C; C23; C23F; C23F4/00; H01J37/02; H01J37/18; H01J37/34
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
89 words
In a process for the reactive sputter etching of a substrate with a reactive gas comprising: placing said substrate in a suitable plasma chamber; introducing said reactive gas into said chamber under reduced pressure; generating a plasma discharge in said chamber thereby etching the substrate; and maintaining a high vacuum in said chamber with vacuum pump means thereby continuously removing volatile products of the etching process, the improvement comprising utilizing a cryogenic pump to maintain the high vacuum, thereby improving the reproducibility of the etch being a cryogenic pump.
Claim 2
Dependent Claim
89 words
In a process for the reactive sputter etching of a substrate with a reactive gas comprising: placing said substrate in a suitable plasma chamber; introducing said reactive gas into said chamber under reduced pressure; generating a plasma discharge in said chamber thereby etching the substrate; and maintaining a high vacuum in said chamber with vacuum pump means thereby continuously removing volatile products of the etching process, the improvement comprising utilizing a cryogenic pump to maintain the high vacuum, thereby improving the reproducibility of the etch being a cryogenic pump.
Claim 3
Dependent Claim
17 words
A process according to claim 1, wherein the substrate to be etched comprises a layer of aluminum.
Claim 4
Dependent Claim
15 words
A process according to claims 1 or 2, wherein said reactive gas is boron trichloride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-06-06 | 1986-12-06 | 1987-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-06 | 1990-12-06 | 1991-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-06 | 1994-12-06 | 1995-06-07 | $7700.00 | Window Closed / Lapsed |