AlGaAs-AlGaAsSb Light emitting diodes

Claim 2

In a light emitting diode, a semiconductor body comprising first and second Al x Ga 1-x As semiconductor cladding layers of opposite conductivity type, and an intermediate semiconductor region between and contiguous with said cladding layers, said intermediate region including a narrower bandgap Al z Ga 1-z As 1-y Sb y active layer capable of emitting radiation when said cladding layers are forward biased and pumping current is applied thereto, the amount y of Sb in said active layer being mutually adapted with the thicknesses of said layers and said region so as to place said active layer under compression at the operating temperature of said diode.

Claim 3

The body of claim 1 wherein the y and z in said active layer are adapted so that the wavelength of said radiation is in the range of approximately 0.87-0.92 μm.

Claim 4

The body of claim 2 wherein z=0 and said active layer therefore comprises GaAs 1-y Sb y .

Claim 5

The body of claim 1 wherein y and z in said active layer are adapted so that the wavelength of said radiation is in the visible.

Claim 6

The body of claims 1, 2, 3, or 4 wherein 0.001≦y≦0.02.

Claim 7

The body of claim 5 wherein (x-z)≧0.20 and y≧0.004.

Claim 8

The body of claim 1 wherein the amount y of Sb in said active layer reduces to essentially zero the lattice mismatch between said active layer and said cladding layers.

Claim 9

The body of claim 7 wherein y≈0.016 (x-z).

Claim 10

A semiconductor laser diode comprising first and second Al x Ga 1-x As, x≧0.20 cladding layers of opposite conductivity type, an intermediate semiconductor region between and contiguous with said cladding layers, said intermediate region including a narrower bandgap GaAs 1-y Sb y active layer, 0.001≦y≦0.02, capable of emitting radiation when said cladding layers are forward biased and pumping current is applied thereto, the amount y of Sb being mutually adapted with the thicknesses of said layers and said region to place said active layer under compression at the operating temperature of said diode, electrode means for applying forward bias voltage and current to said cladding layers, and optical feedback means for generating stimulated emission of said radiation.

Claim 11

A semiconductor laser diode comprising first and second Al x Ga 1-x As, x≧0.20 cladding layers of opposite conductivity type, an intermediate semiconductor region between and contiguous with said cladding layers, said intermediate region including a narrower bandgap GaAs 1-y Sb y active layer, 0.001≦y≦0.02, capable of emitting radiation when said cladding layers are forward biased and pumping current is applied thereto, the amount y of Sb being mutually adapted with the thicknesses of said layers and said region to place said active layer under compression at the operating temperature of said diode, electrode means for applying forward bias voltage and current to said cladding layers, and optical feedback means for generating stimulated emission of said radiation.

Claim 12

The laser diode of claim 9 wherein said active layer is adapted to emit radiation at a free space wavelength in the range of approximately 0.87-0.92 μm.

Claim 13

The laser diode of claim 9 wherein the thickness of said active layer is in the range of approximately 0.1-0.4 μm.

Claim 14

The laser diode of claims 9, 10, or 11 including means for constraining said pumping current to flow in a relatively narrow channel through said active layer.

Claim 15

A semiconductor laser with enhanced lifetime comprising a GaAs body, a first cladding layer comprising n-Al x Ga 1-x As epitaxially grown on said body, x≧0.20, an active layer comprising GaAs 1-y Sb y epitaxially grown on said first cladding layer to a thickness in the range of approximately 0.1-0.4 μm, with 0.001≦y≦0.02, a second cladding layer comprising p-Al x Ga 1-x As grown on said active layer, x≧0.20, a relatively high conductivity p-GaAs contact-facilitating layer epitaxially grown on said second cladding layer, the amount y of Sb being mutually adapted with the thicknesses of said body and said layers so as to place said active layer under compression at the operating temperature of said laser, electrode means formed on said substrate and on said contact facilitating layer for applying forward bias voltage to said cladding layers and pumping current to said active region, thereby causing said active region to emit radiation at a wavelength in the range of about 0.87-0.92 μm, means for constraining said pumping current to flow in a relatively narrow channel through said active layer, and an optical feedback means for causing stimulated emission of said radiation.

Claim 16

A semiconductor laser with enhanced lifetime comprising a GaAs body, a first cladding layer comprising n-Al x Ga 1-x As epitaxially grown on said body, x≧0.20, an active layer comprising GaAs 1-y Sb y epitaxially grown on said first cladding layer to a thickness in the range of approximately 0.1-0.4 μm, with 0.001≦y≦0.02, a second cladding layer comprising p-Al x Ga 1-x As grown on said active layer, x≧0.20, a relatively high conductivity p-GaAs contact-facilitating layer epitaxially grown on said second cladding layer, the amount y of Sb being mutually adapted with the thicknesses of said body and said layers so as to place said active layer under compression at the operating temperature of said laser, electrode means formed on said substrate and on said contact facilitating layer for applying forward bias voltage to said cladding layers and pumping current to said active region, thereby causing said active region to emit radiation at a wavelength in the range of about 0.87-0.92 μm, means for constraining said pumping current to flow in a relatively narrow channel through said active layer, and an optical feedback means for causing stimulated emission of said radiation.