Patent US2373493A successfully refreshed from Google Patents.
Patent US4382099A successfully refreshed from Google Patents.
US4382099A
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Dopant predeposition from high pressure plasma source
Assignee: Motorola Solutions Inc
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Filing: 1981-10-26
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Granted: 1983-05-03
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Expires: 2001-10-26
Abstract
Abstract A method is provided for predepositing dopant material on semiconductor substrates. The semiconductor substrates are positioned within a high pressure plasma reactor apparatus. A high pressure rf plasma is generated in the apparatus at a pressure of about one atmosphere or greater. Dopant materials such as B 2 H 6 , PH 3 , or AsH 3 are introduced to the plasma and form ionized species of the dopant. The plasma and the ionized species are directed to the surface of the semiconductor substrates whereon a uniform layer of the dopant is deposited.
Inventors
- 👤 Ronald N. Legge
- 👤 Kalluri R. Sarma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:14
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/513; C30; C30B; C30B31/00; C30B31/02; H10P32/14; H10P32/1408
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
90 words
A method for predepositing dopant material on a semiconductor substrate without codepositing an insulator or semiconductor which comprises the steps of: providing a high pressure plasma reactor apparatus; positioning a semiconductor substrate in said apparatus; generating within said apparatus a high pressure rf plasma at a pressure of about one atmosphere or greater; introducing dopant material to said plasma to form ionized species of said dopant; and directing said plasma and said ionized species to impinge upon said semiconductor substrate and to deposit thereon a layer of dopant material only.
Claim 2
Independent Claim
90 words
A method for predepositing dopant material on a semiconductor substrate without codepositing an insulator or semiconductor which comprises the steps of: providing a high pressure plasma reactor apparatus; positioning a semiconductor substrate in said apparatus; generating within said apparatus a high pressure rf plasma at a pressure of about one atmosphere or greater; introducing dopant material to said plasma to form ionized species of said dopant; and directing said plasma and said ionized species to impinge upon said semiconductor substrate and to deposit thereon a layer of dopant material only.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein in said step of positioning, said substrate is located to control the temperature of said substrate.
Claim 4
Independent Claim
115 words
A method for forming doped regions in a semiconductor substrate which comprises the steps of: providing a semiconductor substrate having an exposed surface portion; positioning said substrate in a high pressure plasma reactor apparatus; providing a plasma gas; creating a high pressure rf plasma in said plasma gas at a pressure of about one atmosphere or greater; introducing a second gas comprising a dopant impurity to said plasma gas; reacting said second gas in said plasma to form ionized species of said dopant impurity; directing said plasma toward said exposed surface portion of said substrate to deposit only said dopant impurity thereon; and heating said substrate to redistribute said dopant impurity in said semiconductor substrate.
Claim 5
Independent Claim
115 words
A method for forming doped regions in a semiconductor substrate which comprises the steps of: providing a semiconductor substrate having an exposed surface portion; positioning said substrate in a high pressure plasma reactor apparatus; providing a plasma gas; creating a high pressure rf plasma in said plasma gas at a pressure of about one atmosphere or greater; introducing a second gas comprising a dopant impurity to said plasma gas; reacting said second gas in said plasma to form ionized species of said dopant impurity; directing said plasma toward said exposed surface portion of said substrate to deposit only said dopant impurity thereon; and heating said substrate to redistribute said dopant impurity in said semiconductor substrate.
Claim 6
Dependent Claim
27 words
The method of claim 3 wherein said dopant impurity is selected from the group consisting of B 2 H 6 , AsH 3 and PH 3 .
Claim 7
Dependent Claim
20 words
The method of claim 3 further comprising the step of depositing a layer comprising silicon nitride overlying said dopant impurity.
Claim 8
Independent Claim
123 words
A method for predepositing dopant material on opposed surfaces of a semiconductor substrate which comprises the steps of: providing a semiconductor substrate having first and second opposed surfaces; generating a first high pressure rf plasma; introducing a first dopant material to said first plasma to form a plasma of said first dopant; directing said plasma of said first dopant to said first opposed surface to deposit a layer of only said first dopant material thereon; generating a second high pressure rf plasma; introducing a second dopant material to said second plasma to form a plasma of said second dopant; and directing said plasma of said second dopant to said second opposed surface to deposit a layer of only said second dopant material thereon.
Claim 9
Independent Claim
123 words
A method for predepositing dopant material on opposed surfaces of a semiconductor substrate which comprises the steps of: providing a semiconductor substrate having first and second opposed surfaces; generating a first high pressure rf plasma; introducing a first dopant material to said first plasma to form a plasma of said first dopant; directing said plasma of said first dopant to said first opposed surface to deposit a layer of only said first dopant material thereon; generating a second high pressure rf plasma; introducing a second dopant material to said second plasma to form a plasma of said second dopant; and directing said plasma of said second dopant to said second opposed surface to deposit a layer of only said second dopant material thereon.
Claim 10
Dependent Claim
19 words
The method of claim 6 wherein said first dopant and said second dopant are of opposite impurity determining type.
Claim 11
Dependent Claim
24 words
The method of claim 6 wherein said first and second high frequency plasmas are generated at a pressure of about one atmosphere or greater.
Claim 12
Dependent Claim
24 words
The method of claim 6 wherein said substrate is maintained at a temperature of less than about 300° C. during said steps of directing.
Claim 13
Independent Claim
92 words
A method for making a photovoltaic device which comprises the steps of: providing a high pressure plasma reactor apparatus; positioning a substrate of a first conductivity type in said apparatus; generating in said apparatus a high pressure rf plasma; introducing to said plasma a dopant of a second conductivity determining type; directing said plasma and said dopant to a surface of said substrate and forming a layer of only said dopant thereon; and heating said substrate with said layer thereon to an elevated temperature to form a p-n junction in said substrate.
Claim 14
Independent Claim
92 words
A method for making a photovoltaic device which comprises the steps of: providing a high pressure plasma reactor apparatus; positioning a substrate of a first conductivity type in said apparatus; generating in said apparatus a high pressure rf plasma; introducing to said plasma a dopant of a second conductivity determining type; directing said plasma and said dopant to a surface of said substrate and forming a layer of only said dopant thereon; and heating said substrate with said layer thereon to an elevated temperature to form a p-n junction in said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-02 | 1986-11-01 | 1987-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-02 | 1990-11-01 | 1991-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-02 | 1994-11-01 | 1995-05-03 | $7700.00 | Window Closed / Lapsed |