Patent US4381453A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4381453A Expired / Lapsed US ⏱️ 0.0 years remaining

System and method for deflecting and focusing a broad ion beam

Assignee: International Business Machines Corp
•
Filing: 1980-12-31
•
Granted: 1983-04-26
•
Expires: 2000-12-31
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method and system for deflecting a broad ion plasma beam which includes an ion source for forming an ion plasma, an extraction means for extracting a broad ion plasma beam from the ion plasma, and deflection means including a non-grounded surface located in the path of the ion plasam beam and at an angle to the path for deflecting the ion plasma beam to a target material. A grounded, screen grid is located in front of the deflecting means in the path of the ion plasma. The screen grid has openings which permit passage of the ions in the ion plasma, but block passage of the electrons. The plasma beam is deflected by the deflection means and the grounded, screen grid onto the target material for sputter cleaning, deposition and ion milling applications.

Inventors

  • 👤 Jerome J. Cuomo
  • 👤 James M. E. Harper

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 22:47
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053

Claims Analysis

Total Claims: 19
Claim 1
Independent Claim 136 words
A system for deflecting a broad ion plasma beam, comprising: a ion source for forming an ion plasma; extraction means for extracting a broad ion plasma beam from said ion plasma in said ion source; deflection means including a non-grounded surface located in the path of said ion plasma beam and positioned at an angle to said path for deflecting said ion plasma beam to a target material; and a grounded screen grid located in front of said deflection means in the path of said ion plasma beam, said screen grid having openings which permit passage of the ions in said ion plasma beam but which block passage of the electrons in said ion plasma beam; whereby said ion plasma beam is deflected by said deflection means and said grounded screen grid onto said target material.
Claim 2
Independent Claim 136 words
A system for deflecting a broad ion plasma beam, comprising: a ion source for forming an ion plasma; extraction means for extracting a broad ion plasma beam from said ion plasma in said ion source; deflection means including a non-grounded surface located in the path of said ion plasma beam and positioned at an angle to said path for deflecting said ion plasma beam to a target material; and a grounded screen grid located in front of said deflection means in the path of said ion plasma beam, said screen grid having openings which permit passage of the ions in said ion plasma beam but which block passage of the electrons in said ion plasma beam; whereby said ion plasma beam is deflected by said deflection means and said grounded screen grid onto said target material.
Claim 3
Dependent Claim 27 words
System as recited in claim 1, wherein said deflection means comprises an insulator material that charges to a voltage that is determined by the ion plasma beam.
Claim 4
Dependent Claim 16 words
System as recited in claim 1, wherein said deflection means comprises a metal that is non-grounded.
Claim 5
Dependent Claim 28 words
System as recited in claim 1, wherein said deflection means is mounted with its deflection surface at an angle of about forty-five degrees to the ion plasma beam.
Claim 6
Dependent Claim 25 words
System as recited in claim 1, wherein said deflection means comprises a concave reflecting surface for focusing said ion plasma beam towards a focal point.
Claim 7
Dependent Claim 21 words
System as recited in claim 5, wherein said target material is located near said focal point of said concave reflecting surface.
Claim 8
Dependent Claim 27 words
System as recited in claim 6, wherein said target material is sputtered by said focused ion plasma beam, and the sputtered material is deposited on a wafer.
Claim 9
Dependent Claim 39 words
System as recited in claim 1, wherein said grounded screen grid is positioned parallel to said non-grounded surface of said deflection means thereby confining an electric field generated by said non-grounded surface to the region of said non-grounded surface.
Claim 10
Dependent Claim 28 words
System as recited in claim 1, wherein said grounded screen grid has openings which are less than the Debye length of the electrons in the ion plasma beam.
Claim 11
Dependent Claim 25 words
System as recited in claim 1, further comprising control means electrically connected to said deflection means for controlling the voltage potential of said non-grounded surface.
Claim 12
Dependent Claim 26 words
System as recited in claim 10, wherein said control means comprises both a capacitor means and a resistor means connected between said non-grounded surface and ground.
Claim 13
Dependent Claim 19 words
System as recited in claim 10, wherein said control means comprises a voltage supply connected to said non-grounded surface.
Claim 14
Dependent Claim 27 words
System as recited in claim 10, wherein said control means comprises switch means for connecting said non-grounded surface to electrical ground for the purpose of sputter deposition.
Claim 15
Dependent Claim 23 words
System as recited in claim 1, wherein said ion source provides an ion plasma beam which is more than 10 centimeters in diameter.
Claim 16
Independent Claim 136 words
A method for deflecting a broad ion plasma beam, comprising: forming an ion plasma in an ion source; extracting a broad ion plasma beam from said ion plasma; deflecting said ion plasma beam to a target material using a deflecting surface located in the path of said ion plasma beam and at an angle to said path; and confining the deflecting electric field to the region of the deflecting surface by locating a grounded screen grid in front of said deflecting surface in the path of said ion plasma, said screen grid having openings which permit passage of the ions in said ion plasma beam, but which block passage of the electrons in said ion beam; whereby said ion plasma beam is deflected by said deflection means and said grounded screen grid onto said target material.
Claim 17
Independent Claim 136 words
A method for deflecting a broad ion plasma beam, comprising: forming an ion plasma in an ion source; extracting a broad ion plasma beam from said ion plasma; deflecting said ion plasma beam to a target material using a deflecting surface located in the path of said ion plasma beam and at an angle to said path; and confining the deflecting electric field to the region of the deflecting surface by locating a grounded screen grid in front of said deflecting surface in the path of said ion plasma, said screen grid having openings which permit passage of the ions in said ion plasma beam, but which block passage of the electrons in said ion beam; whereby said ion plasma beam is deflected by said deflection means and said grounded screen grid onto said target material.
Claim 18
Dependent Claim 28 words
Method as recited in claim 15, where in said step of extracting a broad ion plasma beam a beam is extracted having a diameter greater than 10 centimeters.
Claim 19
Dependent Claim 28 words
Method as recited in claim 15, wherein said grounded screen grid has openings which are less than the Debye length of the electrons in the ion plasma beam.

References Cited (Backward Citations)

US2762916A Cited
US3629578A Cited
US3913320A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-04-25 1986-10-25 1987-04-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-04-25 1990-10-25 1991-04-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-04-25 1994-10-25 1995-04-26 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag