US4380557A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of production of image pickup device
Assignee: Hitachi Ltd
•
Filing: 1981-07-28
•
Granted: 1983-04-19
•
Expires: 2001-07-28
Abstract
Abstract In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100 DEG to 300 DEG C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm-1 is observed larger than the component of a wave number of 2100 cm-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.
Inventors
- 👤 Sachio Ishioka
- 👤 Yasuharu Shimomoto
- 👤 Yoshinori Imamura
- 👤 Saburo Ataka
- 👤 Yasuo Tanaka
- 👤 Hirokazu Matsubara
- 👤 Yukio Takasaki
- 👤 Eiichi Maruyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:29
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/20; H01J9/233
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
104 words
A method of producing an image pickup device, which comprises the steps of forming a hydrogen-containing amorphous silicon layer on a predetermined substrate and heating the amorphous silicon layer at a temperature of from 100° to 300° C., said hydrogen-containing amorphous silicon containing hydrogen in an amount of 5 to 30 atomic % and having an optical forbidden band gap of from 1.30 eV to 1.95 eV, and in the infrared absorption spectrum of the hydrogen-containing amorphous silicon, the component of a wave number of about 2000 cm -1 being larger than the component of a wave number of about 2100 cm -1 .
Claim 2
Independent Claim
104 words
A method of producing an image pickup device, which comprises the steps of forming a hydrogen-containing amorphous silicon layer on a predetermined substrate and heating the amorphous silicon layer at a temperature of from 100° to 300° C., said hydrogen-containing amorphous silicon containing hydrogen in an amount of 5 to 30 atomic % and having an optical forbidden band gap of from 1.30 eV to 1.95 eV, and in the infrared absorption spectrum of the hydrogen-containing amorphous silicon, the component of a wave number of about 2000 cm -1 being larger than the component of a wave number of about 2100 cm -1 .
Claim 3
Dependent Claim
28 words
A method of producing an image pickup device according to claim 1, wherein the heating step is carried out at a temperature of from 150° to 300° C.
Claim 4
Dependent Claim
50 words
A method of producing an image pickup device according to claim 1 or 2, wherein the step of forming the hydrogen-containing amorphous silicon layer is effected in an atmosphere containing at least a rare gas and hydrogen and the amorphous silicon layer is deposited on the predetermined substrate by sputtering.
Claim 5
Dependent Claim
32 words
A method of producing an image pickup device according to claim 1 or 2, wherein the heating step is carried out in vacuum at an absolute pressure of 0.1 Torr or lower.
Claim 6
Independent Claim
115 words
A method of producing an image pickup tube, which comprises the steps of forming a hydrogen-containing amorphous silicon layer on an image pickup tube substrate comprising a light-transmitting substrate and a transparent electrode and heating the hydrogen-containing amorphous silicon layer at a temperature of from 100° to 300° C., said hydrogen-containing amorphous silicon containing hydrogen in an amount of 5 to 30 atomic % and having an optical forbidden band gap of from 1.30 eV to 1.95 eV, and in the infrared absorption spectrum of the hydrogen-containing amorphous silicon, the component of a wave number of about 2000 cm -1 being larger than the component of a wave number of about 2100 cm -1 .
Claim 7
Independent Claim
115 words
A method of producing an image pickup tube, which comprises the steps of forming a hydrogen-containing amorphous silicon layer on an image pickup tube substrate comprising a light-transmitting substrate and a transparent electrode and heating the hydrogen-containing amorphous silicon layer at a temperature of from 100° to 300° C., said hydrogen-containing amorphous silicon containing hydrogen in an amount of 5 to 30 atomic % and having an optical forbidden band gap of from 1.30 eV to 1.95 eV, and in the infrared absorption spectrum of the hydrogen-containing amorphous silicon, the component of a wave number of about 2000 cm -1 being larger than the component of a wave number of about 2100 cm -1 .
Claim 8
Independent Claim
127 words
A method of producing a solid-state image pickup device, which comprises the steps of forming a hydrogen-containing amorphous silicon layer on a semiconductor substrate including at least an impurity region and a first electrode having contact with at least a part of the impurity region and heating the hydrogen-containing amorphous silicon layer at a temperature of from 100° to 300° C., said hydrogen-containing amorphous silicon containing hydrogen in an amount of 5 to 30 atomic % and having an optical forbidden band gap of from 1.30 eV to 1.95 eV, and in the infrared absorption spectrum of the hydrogen-containing amorphous silicon, the component of a wave number of about 2000 cm -1 being larger than the component of a wave number of about 2100 cm -1 .
Claim 9
Independent Claim
127 words
A method of producing a solid-state image pickup device, which comprises the steps of forming a hydrogen-containing amorphous silicon layer on a semiconductor substrate including at least an impurity region and a first electrode having contact with at least a part of the impurity region and heating the hydrogen-containing amorphous silicon layer at a temperature of from 100° to 300° C., said hydrogen-containing amorphous silicon containing hydrogen in an amount of 5 to 30 atomic % and having an optical forbidden band gap of from 1.30 eV to 1.95 eV, and in the infrared absorption spectrum of the hydrogen-containing amorphous silicon, the component of a wave number of about 2000 cm -1 being larger than the component of a wave number of about 2100 cm -1 .
References Cited (Backward Citations)
US4196438A
Cited
US4237150A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-04-18 | 1986-10-18 | 1987-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-04-18 | 1990-10-18 | 1991-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-04-18 | 1994-10-18 | 1995-04-19 | $7700.00 | Window Closed / Lapsed |