Patent US4380481A successfully refreshed from Google Patents.
US4380481A
Expired / Lapsed
US
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Method for fabricating semiconductor devices
Assignee: Seiko Instruments Inc
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Filing: 1981-03-17
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Granted: 1983-04-19
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Expires: 2001-03-17
Abstract
Abstract A method of fabricating a semiconductor device comprising forming an island-shaped multi-layered structure of oxides and nitrides on the surface of a semiconductor. The multi-layered structure is selectively etched to define diffusion windows for forming a semiconductor structure in the semiconductor surface having a central region of one conductivity type surrounded by another region of a different conductivity type. A second island-like multi-layered structure is formed and is etched for controlling the duration of the etching steps by controlling the amount that the masks lift off from the insulation layers subjected to etching. The etching is carried out by side etching.
Inventors
- 👤 Masafumi Shimbo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10D; H10D30/00; H10D30/80; H10D30/83; H10D30/831; H10P76/00; H10P76/40; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S438/00; Y10S438/911
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
208 words
A method for fabricating a semiconductor device, comprising the steps of: forming a multi-insulation layer composed of at least two kinds of materials including an anti-oxidation substance and an oxide on a semiconductor surface region of low impurity density in the form of an island; forming a first selective oxidation film on the surface of said low impurity density region by using at least one layer of said multi-insulation layer as a mask; defining a first window with a width determined by at least one side face of said multi-layer which has been subjected to side etching and an end portion of said first selective oxidation film and forming a first region of high impurity density in said semiconductor surface along the periphery of said island-like multi-insulation layer by selectively diffusing an impurity; forming the anti-oxidation insulation layer of said multi-insulation layer so as to reduce the size thereof after an insulation layer which is not a most upper layer and which is at least one layer of said multi-insulation layer is subjected to a second side etching and carrying out selective oxidation; and forming a second region of high impurity density in the inside of said first region after removing said multi-insulation layer and defining a window.
Claim 2
Independent Claim
208 words
A method for fabricating a semiconductor device, comprising the steps of: forming a multi-insulation layer composed of at least two kinds of materials including an anti-oxidation substance and an oxide on a semiconductor surface region of low impurity density in the form of an island; forming a first selective oxidation film on the surface of said low impurity density region by using at least one layer of said multi-insulation layer as a mask; defining a first window with a width determined by at least one side face of said multi-layer which has been subjected to side etching and an end portion of said first selective oxidation film and forming a first region of high impurity density in said semiconductor surface along the periphery of said island-like multi-insulation layer by selectively diffusing an impurity; forming the anti-oxidation insulation layer of said multi-insulation layer so as to reduce the size thereof after an insulation layer which is not a most upper layer and which is at least one layer of said multi-insulation layer is subjected to a second side etching and carrying out selective oxidation; and forming a second region of high impurity density in the inside of said first region after removing said multi-insulation layer and defining a window.
Claim 3
Dependent Claim
58 words
A method for fabricating a semiconductor device as claimed in claim 1 wherein said multi-insulation layer has a double layer structure of a nitride film and an oxide film thereon and the first time and the second time side etching operations are carried out for etching the nitride film by using the oxide film as a mask member.
Claim 4
Dependent Claim
104 words
A method for fabricating a semiconductor device as claimed in claim 1 wherein said multi-insulation layer has a double layer structure of a nitride film and an oxide film thereon, a first selective oxidation film is formed after the first time side etching for said oxide film is carried out by utilizing the mask member used in the step of forming the island-like multi-insulation layer, said nitride film is removed by using a mask of said oxide film to define said first window, and the second time side etching is carried out for said nitride film by using said oxide film as a mask.
Claim 5
Dependent Claim
49 words
A method for fabricating a semiconductor device as claimed in claim 1, 2 or 3 wherein after the surface of said first region is subjected to an oxidation, the second time side etching is carried out after or during impurity selective diffusion for the formation of said first region.
Claim 6
Dependent Claim
96 words
A method for fabricating a semiconductor device as claimed in claim 1 wherein said multi-insulation layer has at least four layers composed of a first nitride film, a first oxide film, a second nitride film and a second oxide film in the order from the lowest layer, the first time side etching is carried out for the first and the second nitride films by using the first and the second oxide films as masks, and the second side etching is carried out for the first oxide film by using the second nitride film as a mask.
Claim 7
Dependent Claim
106 words
A method for fabricating a semiconductor device as claimed in claim 1 wherein said multi-insulation layer has at least three layers composed of a first oxide film, a nitride film and a second oxide film in the named order from said semiconductor surface, the first side etching is carried out for the nitride film by using the second oxide film as a mask, said first window is defined by removing one portion of said first oxide film by using the nitride film as a mask, and the second side etching is carried out for the first oxide film by using the nitride film as a mask.
Claim 8
Dependent Claim
63 words
A method for fabricating a semiconductor device as claimed in claim 1, 2, 3, 5 or 6 wherein another island-like multi-insulation layer with a predetermined width is prepared besides said island-like multi-insulation layer, and each amount of the first side etching and the second side etching is controlled by the lift-off of the mask on the insulation layer subjected to the side etching.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-04-18 | 1986-10-18 | 1987-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-04-18 | 1990-10-18 | 1991-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-04-18 | 1994-10-18 | 1995-04-19 | $7700.00 | Window Closed / Lapsed |