Patent US4380020A successfully refreshed from Google Patents.
US4380020A
Expired / Lapsed
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Active high frequency semiconductor device with integral waveguide
Assignee: Northrop Grumman Space and Mission Systems Corp
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Filing: 1980-01-21
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Granted: 1983-04-12
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Expires: 2000-01-21
Abstract
Abstract An active semiconductor device, such as a Gunn effect device, capable of operation at extremely high frequencies, fabricated in situ on a substrate that also serves as a dielectric waveguide to propagate energy from the device. In the embodiment disclosed, a Gunn effect diode is formed on a substrate of gallium arsenide (GaAs), together with a cavity region and a metalized heat sink layer permitting operation at relatively high power levels. A bias current is applied through a conductive strip and then through the cavity region to the diode, and a quarter-wave choke is provided in the conductive strip to prevent transmission of radio-frequency energy back along the strip.
Inventors
- 👤 Lloyd T. Yuan
- 👤 Yu-Wen Chang
- 👤 Thomas G. Mills
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:39
CPC Classifications
H; H10; H10N; H10N89/00; H10W; H10W44/00; H10W44/20
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
118 words
A monolithic semiconductor device capable of operation at extremely high frequencies, said device comprising: a substrate that serves as a waveguide as well as a substrate; a metallic layer on said substrate having a recess opening toward said substrate and defining a cavity and a contact portion extending across said recess; an active high-frequency semiconductor device within said cavity between and in contact with said substrate and said contact portion including a first semiconductor layer on said substrate extending across said cavity beyond said contact portion and a second semiconductor layer in contact with said contact portion; and conductor means on said substrate within said recess and contacting said first semiconductor layer for supplying power to said device.
Claim 2
Dependent Claim
118 words
A monolithic semiconductor device capable of operation at extremely high frequencies, said device comprising: a substrate that serves as a waveguide as well as a substrate; a metallic layer on said substrate having a recess opening toward said substrate and defining a cavity and a contact portion extending across said recess; an active high-frequency semiconductor device within said cavity between and in contact with said substrate and said contact portion including a first semiconductor layer on said substrate extending across said cavity beyond said contact portion and a second semiconductor layer in contact with said contact portion; and conductor means on said substrate within said recess and contacting said first semiconductor layer for supplying power to said device.
Claim 3
Dependent Claim
28 words
A monolithic semiconductor device as set forth in claim 1, wherein said substrate is of a semi-insulating material having a resistivity of the order of 10 7 ohm-centimeter.
Claim 4
Dependent Claim
20 words
A monolithic semiconductor device as set forth in claim 1, wherein said active semiconductor device is a Gunn effect device.
Claim 5
Dependent Claim
37 words
A monolithic semiconductor device as set forth in claim 1, wherein: said cavity is approximately circular; and said conductor means is a strip having an arcuate portion in contact with said first semiconductor layer near its periphery.
Claim 6
Dependent Claim
30 words
A monolithic semiconductor device as set forth in claim 1 or 4, wherein said conductive means includes a choke region to prevent transmission of radio-frequency energy along said conductive strip.
Claim 7
Dependent Claim
133 words
A monolithic Gunn effect device capable of operation at extremely high frequencies, said device comprising: a semi-insulating substrate that serves as a waveguide as well as a substrate; a Gunn effect device formed integrally on a surface of said substrate, said Gunn effect device having a plurality of semiconductive layers and an adjacent semiconductive cavity region; a metalized layer covering a large proportion of one face of said substrate and contacting said Gunn effect device to provide a heat sink and an electrical contact therewith; and a bias-current conductive strip formed adjacent said substrate and having a portion in contact with one of said semiconductive layers to provide electrical contact with said Gunn effect device; whereby radio-frequency energy is propagated out of said cavity region and into said substrate acting as a waveguide.
Claim 8
Dependent Claim
133 words
A monolithic Gunn effect device capable of operation at extremely high frequencies, said device comprising: a semi-insulating substrate that serves as a waveguide as well as a substrate; a Gunn effect device formed integrally on a surface of said substrate, said Gunn effect device having a plurality of semiconductive layers and an adjacent semiconductive cavity region; a metalized layer covering a large proportion of one face of said substrate and contacting said Gunn effect device to provide a heat sink and an electrical contact therewith; and a bias-current conductive strip formed adjacent said substrate and having a portion in contact with one of said semiconductive layers to provide electrical contact with said Gunn effect device; whereby radio-frequency energy is propagated out of said cavity region and into said substrate acting as a waveguide.
Claim 9
Dependent Claim
35 words
A monolithic Gunn effect device as set forth in claim 6, wherein said bias-current conductive strip includes a reduced width portion to provide a choke for inhibiting transmission of radio-frequency energy back along said strip.
Claim 10
Dependent Claim
35 words
A monolithic Gunn effect device as set forth in claim 7, wherein said portion of said bias-current conductive strip is bifurcated and arcuate in shape, to conform with a peripheral portion of said cavity region.
Claim 11
Dependent Claim
30 words
A monolithic Gunn effect device as set forth in claim 8, wherein said metalized layer is selectively omitted to define a recess in which said bias-current conductive strip is disposed.
Claim 12
Dependent Claim
36 words
A monolithic Gunn effect device as set forth in claim 9, wherein said metalized layer includes a finger projecting into said recess and contacting said Gunn effect device to conduct both heat and bias current therefrom.
Claim 13
Dependent Claim
35 words
A monolithic Gunn effect devices as set forth in claim 6, wherein said portion of said bias-current conductive strip is bifurcated and arcuate in shape, to conform with a peripheral portion of said cavity region.
Claim 14
Dependent Claim
64 words
A monolithic Gunn effect device as set forth in claim 7, wherein: said substrate is of semi-insulating gallium arsenide; said cavity region is of n+ type gallium arsenide; and said Gunn effect device includes a layer of n type gallium arsenide in contact with said cavity region, and a layer of n+ type gallium arsenide between said n type layer and said metalized layer.
Claim 15
Dependent Claim
50 words
A monolithic Gunn effect device as set forth in claim 6, and further including a second metalized layer covering at least a portion of the surface of said substrate opposite the one on which said Gunn effect device is formed, to inhibit radiation of radio-frequency energy out of said substrate.
Claim 16
Dependent Claim
34 words
A monolithic Gunn effect device as set forth in claim 13, wherein said substrate is elongated and terminates in a tapered end to provide launching of radio-frequency energy generated by said Gunn effect device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-04-11 | 1986-10-11 | 1987-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-04-11 | 1990-10-11 | 1991-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-04-11 | 1994-10-11 | 1995-04-12 | $7700.00 | Window Closed / Lapsed |