Semiconductor memory device

Claim 2

A semiconductor memory device for use with a row decoder supplying row access signals and a column decoder for supplying column access signals, the device comprising: at least one memory cell; at least one word line connected to said at least one memory cell and receiving the row access signals; at least one data line connected to said at least one memory cell to transfer data to and from said at least one memory cell in accordance with said column access signals; and positive feedback amplifier means coupled with said at least one word line to amplify said received row access signals supplied to said at least one word line and to positively feed back to said at least one word line said amplified row access signals.

Claim 3

A semiconductor memory device according to claim 1, wherein said positive feedback amplifier means is comprised of at least one positive feedback amplifier circuit having first and second power source terminals, first and second MOS transistors of which the current paths are connected in series between said first and second power source terminals, said second MOS transistor being connected at the gate to said word line, a third MOS transistor of which the current path is connected between said first power source terminal and said word line and the gate is connected to a junction between said first and second MOS transistors, and resistive means connected between said first power source terminal and the gate of said third MOS transistor.

Claim 4

A semiconductor memory device according to claim 2, wherein said first and third MOS transistors are p-channel MOS transistors and said second MOS transistor is an n-channel MOS transistor.

Claim 5

A semiconductor memory device according to claim 2 or 3, wherein said positive feedback amplifier circuit further includes a fourth MOS transistor of which the current path is connected between said word line and said second power source terminal.

Claim 6

A semiconductor memory device according to claim 4, wherein said resistive means is a fifth MOS transistor which has a current path connected between said first power source terminal and the gate of said third MOS transistor, and a gate connected to said word line.

Claim 7

A semiconductor memory device according to claim 2 or 3, wherein said resistive means is a fifth MOS transistor which has a current path connected between said first power source terminal and the gate of said third MOS transistor and a gate connected to said word line.

Claim 8

A semiconductor memory device for use with a row decoder supplying row access signals and a column decoder for supplying column access signals, the device comprising: At least one word line receiving at one end the row access signals and for transmitting the received row access signal therealong, the row access signals being attenuated during transmission from said one end to the other end of said word line; a plurality of memory cells connected to said at least one word line; a plurality of data lines connected to said memory cells to transfer data to and from said memory cells in accordance with the column access signals; and positive feedback amplifier means connected proximate to said other end of said word line to amplify said row access signals transmitted to said other end of said word line and to feed back said amplified access signals to said other end of said word line.

Claim 9

A semiconductor memory device for use with a row decoder supplying row access signals and a column decoder for supplying column access signals, the device comprising: At least one word line receiving at one end the row access signals and for transmitting the received row access signal therealong, the row access signals being attenuated during transmission from said one end to the other end of said word line; a plurality of memory cells connected to said at least one word line; a plurality of data lines connected to said memory cells to transfer data to and from said memory cells in accordance with the column access signals; and positive feedback amplifier means connected proximate to said other end of said word line to amplify said row access signals transmitted to said other end of said word line and to feed back said amplified access signals to said other end of said word line.

Claim 10

A semiconductor memory device according to claim 7, wherein said positive feedback amplifier means is comprised of at least one positive feedback amplifier circuit having first and second power source terminals, first and second MOS transistors of which the current paths are connected in series between said first and second power source terminals, said second MOS transistor being connected at the gate to said word line, a third MOS transistor of which the current path is connected between said first power source terminal and said word line and the gate is connected to a junction between said first and second MOS transistors, resistive means connected between said first power source terminal and the gate of said third MOS transistor.

Claim 11

A semiconductor memory device according to claim 8, wherein said first and third MOS transistors are p-channel MOS transistors and said second MOS transistor is an n-channel MOS transistor.

Claim 12

A semiconductor memory device according to claim 8 or 9, wherein said positive feedback amplifier circuit further includes a fourth MOS transistor of which the current path is connected between said word line and said second power source terminal.

Claim 13

A semiconductor memory device according to claim 10, wherein said resistive means is a fifth MOS transistor which has a current path connected between said first power source terminal and the gate of said third MOS transistor, and a gate connected to said word line.

Claim 14

A semiconductor memory device according to claim 8 or 9, wherein said resistive means is a fifth MOS transistor which has a current path connected between said first power source terminal and the gate of said third MOS transistor and a gate connected to said word line.

Claim 15

A semiconductor memory device according to claim 7, further comprising a row decoder circuit connected to said one end of said word line to selectively supply the row access signals to said word line.

Claim 16

A semiconductor memory device according to claim 7 or 13, wherein said positive feedback amplifying means is coupled to said other end of said word line.

Claim 17

A semiconductor memory device for use with a row decoder supplying a row access signal and a column decoder supplying a column access signal, the device comprising: at least one word line receiving at one end the row access signal and for transmitting the received row access signal there along to the other end of the word line; a plurality of memory cells connected to said word line in a spaced apart manner; a plurality of pairs of data lines connected to said memory cells to transfer data to and from said memory cells in accordance with the column access signal; and positive feedback amplifier means connected to said word line proximate said other end for amplifying the row access signal supplied to said word line and for supplying said amplified row access signal to said word line.

Claim 18

A semiconductor memory device for use with a row decoder supplying a row access signal and a column decoder supplying a column access signal, the device comprising: at least one word line receiving at one end the row access signal and for transmitting the received row access signal there along to the other end of the word line; a plurality of memory cells connected to said word line in a spaced apart manner; a plurality of pairs of data lines connected to said memory cells to transfer data to and from said memory cells in accordance with the column access signal; and positive feedback amplifier means connected to said word line proximate said other end for amplifying the row access signal supplied to said word line and for supplying said amplified row access signal to said word line.

Claim 19

A semiconductor memory device according to claim 15 wherein said positive feedback amplifier means is comprised of at least one positive feedback amplifier circuit having first and second power source terminals, first and second MOS transistors of which current paths are connected in series between said first and second power source terminals, said second MOS transistor being connected at the gate to said word line, a third MOS transistor of which the current path is connected between said first power source terminal and said word line and the gate is connected to a junction between said first and second MOS transistor, and resistive means connected between said first power source terminal and the gate of said third MOS transistor.

Claim 20

A semiconductor memory device according to claim 16, wherein said first and third MOS transistors are p-channel MOS transistors and said second MOS transistor is an n-channel MOS transistor.

Claim 21

A semiconductor memory device according to claim 16 or 17, wherein said positive feedback amplifier circuit further includes a fourth MOS transistor of which the current path is connected between said word line and said second power source terminal.

Claim 22

A semiconductor memory device according to claim 18, wherein said resistive means is a fifth MOS transistor which has a current path connected between said first power source terminal and the gate of said third MOS transistor, and a gate connected to said word line.

Claim 23

A semiconductor memory device according to claim 16 or 17, wherein said resistive means is a fifth MOS transistor which has a current path connected between said first power source terminal and the gate of said third MOS transistor and a gate connected to said word line.

Claim 24

A semiconductor memory device according to claim 15, further comprising a decoder circuit connected to said one end of said word line to selectively supplly said access signal to said word line.

Claim 25

A semiconductor memory device according to claim 15 or 21, wherein said positive feedback amplifying means is compled to said other end of said word line.

Claim 26

A semiconductor memory device for use with a row decoder supplying a row access signal and a column decoder supplying a column access signal for controlling memory access, the device comprising: a plurality of memory cells arranged in a matrix of rows and columns; a plurality of word lines, each of the word lines being connected commonly to the memory cells of a different one for the transmission of the row access signal this along from one end to of said rows the other end, the row access being attempted during said transmission; a plurality of data lines each connected commonly to the memory cells of a different column in said matrix to transfer data to and from the memory cells in said columns in accordance with said column access signal; and positive feedback amplifying means coupled to one end of each of said word lines for amplifying the access signal supplied to said word lines and for supplying said amplified row access signal to said word line whereby the attenuation of said signal level of said row access signals is compensated for by said positive feedback amplifying means.

Claim 27

A semiconductor memory device for use with a row decoder supplying a row access signal and a column decoder supplying a column access signal for controlling memory access, the device comprising: a plurality of memory cells arranged in a matrix of rows and columns; a plurality of word lines, each of the word lines being connected commonly to the memory cells of a different one for the transmission of the row access signal this along from one end to of said rows the other end, the row access being attempted during said transmission; a plurality of data lines each connected commonly to the memory cells of a different column in said matrix to transfer data to and from the memory cells in said columns in accordance with said column access signal; and positive feedback amplifying means coupled to one end of each of said word lines for amplifying the access signal supplied to said word lines and for supplying said amplified row access signal to said word line whereby the attenuation of said signal level of said row access signals is compensated for by said positive feedback amplifying means.

Claim 28

A semiconductor memory device according to claim 23, wherein said positive feedback amplifier means is comprised of at least one positive feedback amplifier circuit having first and second power source terminals, first and second MOS transistors of which the current paths are connected in series between said first and second power source terminals, said second MOS transistor being connected at the gate to said word line, a third MOS transistor of which the current path is connected between said first power source terminal and said word line and the gate is connected to a junction between said first and second MOS transistors, and resistive means connected between said first power source terminal and the gate of said third MOS transistor.

Claim 29

A semiconductor memory device according to claim 24, wherein said first and third MOS transistors are p-channel MOS transistors and said second MOS transistor is an n-channel MOS transistor.

Claim 30

A semiconductor memory device according to claim 24, wherein said positive feedback amplifier circuit further includes a fourth MOS transistor of which the current path is connected between said word line and said second power source terminal.

Claim 31

A semiconductor memory device according to claim 26, wherein said resistive means is a fifth MOS transistor which has a current path connected between said first power source terminal and the gate of said third MOS transistor, and a gate connected to said word line.

Claim 32

A semiconductor memory device according to claim 23 or 24, wherein said resistive means is a fifth MOS transistor which has a current path between said first power source terminal and the gate of said third MOS transistor and a gate connected to said word line.

Claim 33

A semiconductor memory device according to claim 23 further comprising a decoder circuit connected to said one end of said word lines for selectively supplying the row access signal to said word lines.

Claim 34

A semiconductor memory device according to claim 23 or 29, wherein said positive feedback amplifying means is coupled to said other end of said word line.

Claim 35

A semiconductor memory device for use with a row decoder supplying row access signals and a column decoder supplying column access signals, the device comprising: at least one word line for receiving the row access signal at one end and for transmitting the received row access signal there along, the level of the row access signal being attenuated during transmission from said one end of said word line; a plurality of memory cells connected to said word lines; plural pairs of data lines connected to said memory cells for transferring data to and from said memory cells in accordance with the column access signals; and positive feedback amplifier means connected to said word line proximate the other end of said word line for amplifying the row access signals supplied to said one end of said word line and for supplying said amplified row access signal to said word line proximate said other end to compensate for the attenuation of said row access signal transmitted along said word line.

Claim 36

A semiconductor memory device for use with a row decoder supplying row access signals and a column decoder supplying column access signals, the device comprising: at least one word line for receiving the row access signal at one end and for transmitting the received row access signal there along, the level of the row access signal being attenuated during transmission from said one end of said word line; a plurality of memory cells connected to said word lines; plural pairs of data lines connected to said memory cells for transferring data to and from said memory cells in accordance with the column access signals; and positive feedback amplifier means connected to said word line proximate the other end of said word line for amplifying the row access signals supplied to said one end of said word line and for supplying said amplified row access signal to said word line proximate said other end to compensate for the attenuation of said row access signal transmitted along said word line.

Claim 37

A semiconductor memory device according to claim 31, wherein said positive feedback amplifier means is comprised of at least one positive feedback amplifier circuit having first and second power source terminals, first and second MOS transistors of which the current paths are connected in series between said first and second power source terminals, said second MOS transistor being connected at the gate to said word line, a third MOS transistor of which the current path is connected between said first power source terminal and said word line and the gate is connected to a junction between said first and second MOS transistors, and resistive means connected between said first power source terminal and the gate of said third MOS transistor.

Claim 38

A semiconductor memory device according to claim 32, wherein said first and third MOS transistors are p-channel MOS transistors and said second MOS transistor is an n-channel MOS transistor.

Claim 39

A semiconductor memory device according to claim 32 or 33, wherein said positive feedback amplifier circuit further includes a fourth MOS transistor of which the current path is connected between said word line and said second power source terminal.

Claim 40

A semiconductor memory device according to claim 34, wherein said resistive means is a fifth MOS transistor which has a current path connected between said first power source terminal and the gate of said third MOS transistor, and at the gate to said word line.

Claim 41

A semiconductor memory device according to claim 32 or 33, wherein said resistive means is a fifth MOS transistor which has a current path connected between said first power source terminal and the gate of said third MOS transistor and a gate connected to said word line.

Claim 42

A semiconductor memory device according to claim 15, further comprising a decoder circuit connected to said one end of said word line to selectively supplly said access signal to said word line.

Claim 43

A semiconductor memory device according to claim 15 or 20, wherein said positive feedback amplifying means is compled to said other end of said word line.