US4378410A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compliant glass for solid state devices
Assignee: Conexant Systems LLC
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Filing: 1981-06-18
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Granted: 1983-03-29
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Expires: 2001-06-18
Abstract
Abstract A solid state device including glass containing SiO2, consisting essentially of the composition, in percent by weight, in the range of: -SiO2 95-99.5 -Al 0.5 to 5.0. -
Inventors
- 👤 Robert F. Bailey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:13
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H01; H01F; H01F41/00; H01F41/32; H01F41/34; H10W74/10; H10W74/131; H10W74/137; Y; Y10; Y10T; Y10T428/00; Y10T428/11; Y10T428/1193
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
108 words
A method of manufacturing a magnetic bubble domain device on a substrate comprising the steps of: providing a layer of material which supports magnetic bubble domains on said substrate; and providing a dielectric layer on the surface of said layer of material to form a composite, and forming a layer of electrically conductive material on said dielectric layer, characterized in that the dielectric layer deposited on the surface of said layer of material comprises a low intrinsic compressive stress material having low shear strength, low stiffness, and high compliance, consisting essentially of the composition, in percent by weight, in the range of ______________________________________
SiO.sub.2 95-99.5
Al 0.5-5.0.
______________________________________
Claim 2
Independent Claim
108 words
A method of manufacturing a magnetic bubble domain device on a substrate comprising the steps of: providing a layer of material which supports magnetic bubble domains on said substrate; and providing a dielectric layer on the surface of said layer of material to form a composite, and forming a layer of electrically conductive material on said dielectric layer, characterized in that the dielectric layer deposited on the surface of said layer of material comprises a low intrinsic compressive stress material having low shear strength, low stiffness, and high compliance, consisting essentially of the composition, in percent by weight, in the range of ______________________________________
SiO.sub.2 95-99.5
Al 0.5-5.0.
______________________________________
Claim 3
Dependent Claim
98 words
A solid state device comprising: a first layer of solid state material; a layer of dielectric material disposed on said layer of solid sate material, said dielectric layer comprising a low intrinsic compressive stress material having low shear strenght, low stiffness, and high compliance, consisting essentially of the composition, in percent by weight, in the range of ______________________________________
SiO.sub.2 95-99.5
Al 0.5-5.0; and
______________________________________ a layer of electrically conductive material disposed on said layer of dielectric material, said layer of electrically conductive material having a mechanical stress associated therewith which is transmitted to said layer of dielectric material.
Claim 4
Dependent Claim
98 words
A solid state device comprising: a first layer of solid state material; a layer of dielectric material disposed on said layer of solid sate material, said dielectric layer comprising a low intrinsic compressive stress material having low shear strenght, low stiffness, and high compliance, consisting essentially of the composition, in percent by weight, in the range of ______________________________________
SiO.sub.2 95-99.5
Al 0.5-5.0; and
______________________________________ a layer of electrically conductive material disposed on said layer of dielectric material, said layer of electrically conductive material having a mechanical stress associated therewith which is transmitted to said layer of dielectric material.
Claim 5
Independent Claim
94 words
A method of providing a glass layer on a solid state device comprising the steps of: providing substantially pure SiO 2 in powdered form; mixing substantially pure Al in powdered form with the SiO 2 ; heating the mixture to form a glass; applying the glass to the surface of a solid state device to form a dielectric layer comprising a low intrinsic compressive stress material having low shear strength, low stiffness, and high compliance, consisting essentially of the composition, in percent by weight, in the range of ______________________________________
SiO.sub.2 95-99.5
Al 0.5-5.0.
______________________________________
Claim 6
Independent Claim
94 words
A method of providing a glass layer on a solid state device comprising the steps of: providing substantially pure SiO 2 in powdered form; mixing substantially pure Al in powdered form with the SiO 2 ; heating the mixture to form a glass; applying the glass to the surface of a solid state device to form a dielectric layer comprising a low intrinsic compressive stress material having low shear strength, low stiffness, and high compliance, consisting essentially of the composition, in percent by weight, in the range of ______________________________________
SiO.sub.2 95-99.5
Al 0.5-5.0.
______________________________________
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-03-28 | 1986-09-27 | 1987-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-03-28 | 1990-09-27 | 1991-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-03-28 | 1994-09-27 | 1995-03-29 | $7700.00 | Window Closed / Lapsed |