Dynamic random access memory cell using field effect devices

Claim 1

A random access memory cell in which all transistors are depletion mode field effect transistors, each having a source, a gate and a drain, used with two complementary bit lines, said memory cell comprising: first and second branches; with each branch comprising a load transistor having its source-drain path connected between a first node and a direct-current bias potential, an active transistor having its source-drain path connected between a reference potential and a second node, an initiation transistor having its source-drain path connected between the first and second nodes, and an access transistor having its source-drain path connected between the second node and one of the bit lines; a cross-coupling means comprising two capacitors connected so that the first node of each branch is coupled via one of said capacitors to the gate of the active transistor of the other branch; the memory cell having an initiation mode in which the initiation transistors are turned on and then turned off by signals at their gates to bring the first nodes both to near said bias potential so that the bias potential appears across both capacitors, following which the memory cell flips into a stable state with one active transistor conducting and the other nonconducting; and write and read modes in which the access transistors are both turned on by address signals at their gates.