Patent US7042627B2 successfully refreshed from Google Patents.
US4375644A
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Photoelectric element, picture-reading device including the same, and process for production thereof
Assignee: Ricoh Co Ltd
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Filing: 1980-11-21
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Granted: 1983-03-01
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Expires: 2000-11-21
Abstract
Abstract A photoelectric device comprises a substrate, a counter electrode, and a photoelectric element interposed therebetween in deposited state and comprising, in successively deposited state, a transparent electroconductive film, a CdS film, a CdTe film, and an As 2 Se 3 film. This device is produced by successively depositing the films while the substrate is maintained at respective specific temperatures, the CdS film and the CdTe film being respectively heat treated at respective specific temperatures and in specific atmospheres after deposition.
Inventors
- 👤 Kouji Mori
- 👤 Hideo Segawa
- 👤 Kouichi Sakurai
- 👤 Masanori Itagaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:46
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F71/00; H10F71/125; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
58 words
A photoelectric element comprising: (I) a transparent electroconductive film; (II) a first film of II-VI compound having a relatively large band gap; (III) a second film of II-VI compound having a band gap smaller than that of the first film; and (IV) an amorphous chalcogenide film, said films (I) through (IV) being successively deposited in the order named.
Claim 2
Dependent Claim
58 words
A photoelectric element comprising: (I) a transparent electroconductive film; (II) a first film of II-VI compound having a relatively large band gap; (III) a second film of II-VI compound having a band gap smaller than that of the first film; and (IV) an amorphous chalcogenide film, said films (I) through (IV) being successively deposited in the order named.
Claim 3
Dependent Claim
34 words
A photoelectric element as claimed in claim 1 in which the transparent electroconductive film is a film of a substance selected from the group consisting of indium oxides, tin oxides and indium tin oxides.
Claim 4
Dependent Claim
48 words
A photoelectric element as claimed in claim 1 in which the first film (II) of II-VI compound having a relatively large band gap is a member selected from the group consisting of a CdS film, a ZnS film, a ZnSe film, a ZnO film and a ZnTe film.
Claim 5
Dependent Claim
27 words
A photoelectric element as claimed in claim 3 in which the first film (II) of II-VI compound having a relatively large band gap is a CdS film.
Claim 6
Dependent Claim
22 words
A photoelectric element as claimed in claim 4 in which the thickness of the CdS film (II) is 1 to 10 μm.
Claim 7
Dependent Claim
21 words
A photoelectric element as claimed in claim 4 in which the thickness of the CdS film is 1 to 3 μm.
Claim 8
Dependent Claim
44 words
A photoelectric element as claimed in claim 1 in which the second film (III) of II-VI compound having the band gap smaller than that of the first film is a member selected from the group consisting of a CdTe film and a CdSe film.
Claim 9
Dependent Claim
32 words
A photoelectric element as claimed in claim 7 in which the second film (III) of II-VI compound having the band gap smaller than that of the first film is a CdTe film.
Claim 10
Dependent Claim
22 words
A photoelectric element as claimed in claim 7 in which the thickness of the CdTe film (III) is 0.2 to 5 μm.
Claim 11
Dependent Claim
22 words
A photoelectric element as claimed in claim 7 in which the thickness of the CdTe film (III) is 0.5 to 2 μm.
Claim 12
Dependent Claim
38 words
A photoelectric element as claimed in claim 1 in which the amorphous chalcogenide film is a member selected from the group consisting of an As x Se 1-x (0<x<1) film and an As y S 1-y (0<y<1) film.
Claim 13
Dependent Claim
21 words
A photoelectric element as claimed in claim 11 in which the amorphous chalcogenide film is an As 2 Se 3 film.
Claim 14
Dependent Claim
25 words
A photoelectric element as claimed in claim 11 in which the thickness of the As 2 Se 3 film (IV) is 0.1 to 1 μm.
Claim 15
Dependent Claim
44 words
A photoelectric element as claimed in claim 1 which comprises (I) the transparent electroconductive film, (II) a CdS film, (III) a CdTe film, and (IV) an As 2 Se 3 film, said films (I) through (IV ) being successively deposited in the order named.
Claim 16
Dependent Claim
36 words
A photoelectric elements as claimed in claim 14 which further comprises a CdS partially oxidized film formed by heat treating said CdS film in an oxygen-containing atmosphere interposed between the CdS film and the CdTe film.
Claim 17
Dependent Claim
26 words
A photoelectric device comprising, in successively deposited state in the order named, a substrate, a photoelectric element as claimed in claim 14, and a counter electrode.
Claim 18
Dependent Claim
23 words
A photoelectric device as claimed in claim 16 which further comprises an insulating layer suitably disposed about said counter electrode and said substrate.
References Cited (Backward Citations)
US4207119A
Cited
US4287383A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-28 | 1986-08-30 | 1987-03-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-28 | 1990-08-30 | 1991-03-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-28 | 1994-08-30 | 1995-03-01 | $7700.00 | Window Closed / Lapsed |