Polycrystalline thin film CdS/CdTe photovoltaic cell

Claim 2

In a photovoltaic cell comprising first and second contiguous crystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein both said cadmium telluride and said cadmium sulfide are polycrystalline, and together said layers contain oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell that is produced without said oxygen atoms present.

Claim 3

A cell as defined in claim 1, wherein said oxygen-containing layer is the cadmium telluride layer.

Claim 4

A cell as defined in claim 1, wherein said oxygen-containing layer is the cadmium sulfide layer.

Claim 5

A cell as defined in claim 1, wherein both of said layers contain oxygen atoms in said amount.

Claim 6

In a photovoltaic cell comprising first and second contiguous crystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein said layers are polycrystalline and the total combined thickness of said layers does not exceed about 10 microns, at least one of said layers containing oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell that is produced without the oxygen atoms in said layer.

Claim 7

In a photovoltaic cell comprising first and second contiguous crystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein said layers are polycrystalline and the total combined thickness of said layers does not exceed about 10 microns, at least one of said layers containing oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell that is produced without the oxygen atoms in said layer.

Claim 8

A cell as defined in claim 5, wherein said oxygen-containing layer is the cadmium telluride layer.

Claim 9

A cell as defined in claim 5, wherein said oxygen-containing layer is the cadmium sulfide layer.

Claim 10

A cell as defined in claim 5, wherein both of said layers contain oxygen atoms in said amount.

Claim 11

A cell as defined in claim 5, wherein one of said electrodes is a layer of conductive oxide in low-impedance contact with at least part of said CdS layer, said oxide layer being transparent or semitransparent to incident radiation.

Claim 12

A cell as defined in claim 9, wherein said oxide is indium tin oxide.

Claim 13

A cell as defined in claim 9, wherein the other of said electrodes is a layer of metal in low-impedance contact with at least part of said CdTe layer.

Claim 14

A cell as defined in claim 11, wherein said metal is gold.

Claim 15

A cell for converting incident radiation into electricity, comprising first and second contiguous polycrystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent or semi-transparent to said incident radiation, said cell being further characterized by a conversion efficiency of at least about 6.0% when exposed to AM2 light.

Claim 16

A cell for converting incident radiation into electricity, comprising first and second contiguous polycrystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent or semi-transparent to said incident radiation, said cell being further characterized by a conversion efficiency of at least about 6.0% when exposed to AM2 light.

Claim 17

A cell for converting incident radiation into electricity, comprising first and second contiguous polycrystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent or semitransparent to said incident radiation, said cell being further characterized by a combined thickness of said layers that is no greater than about 10 microns and a conversion efficiency of at least about 6% when exposed to AM2 light.

Claim 18

A cell for converting incident radiation into electricity, comprising first and second contiguous polycrystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent or semitransparent to said incident radiation, said cell being further characterized by a combined thickness of said layers that is no greater than about 10 microns and a conversion efficiency of at least about 6% when exposed to AM2 light.

Claim 19

In a photovoltaic cell comprising first and second contiguous crystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein both said cadmium telluride and said cadmium sulfide are polycrystalline, at least one of said layers having been formed in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but without said at least one layer having been formed in said oxygen-containing atmosphere.

Claim 20

In a photovoltaic cell comprising first and second contiguous crystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein both said cadmium telluride and said cadmium sulfide are polycrystalline, at least one of said layers having been formed in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but without said at least one layer having been formed in said oxygen-containing atmosphere.

Claim 21

In a photovoltaic cell comprising first and second contiguous polycrystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein the combined thickness of said layers does not exceed about 10 microns, at least one of said layers having been formed in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but without said at least one layer having been formed in said oxygen-containing atmosphere.

Claim 22

In a photovoltaic cell comprising first and second contiguous polycrystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein the combined thickness of said layers does not exceed about 10 microns, at least one of said layers having been formed in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but without said at least one layer having been formed in said oxygen-containing atmosphere.

Claim 23

A cell as defined in claim 16, wherein said layer formed in an oxygen-containing atmosphere is the cadmium telluride layer.

Claim 24

A cell as defined in claim 17, wherein said oxygen-containing atmosphere was at a pressure of at least about 1 torr of oxygen.

Claim 25

A cell as defined in claim 16, wherein said layer formed in an oxygen-containing atmosphere is the cadmium sulfide layer.

Claim 26

A cell as defined in claim 16, wherein both of said layers were formed in an oxygen-containing atmosphere.

Claim 27

In a process for manufacturing a photovoltaic cell by depositing, in the vapor phase, contiguous polycrystalline layers of n-type cadmium sulfide and p-type cadmium telluride and securing an electrode to at least a portion of each of said layers, the improvement comprising depositing at least one of said layers in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, which are sufficient to provide a conversion efficiency that is enhanced over the efficiency of a cell produced without said oxygen atmosphere.

Claim 28

In a process for manufacturing a photovoltaic cell by depositing, in the vapor phase, contiguous polycrystalline layers of n-type cadmium sulfide and p-type cadmium telluride and securing an electrode to at least a portion of each of said layers, the improvement comprising depositing at least one of said layers in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, which are sufficient to provide a conversion efficiency that is enhanced over the efficiency of a cell produced without said oxygen atmosphere.

Claim 29

A process as defined in claim 21, wherein both of said layers are deposited by close-space sublimation in an oxygen-containing atmosphere and the temperature of the substrate during the depositing of CdTe is at least about 575° C., the amount of time of said depositing of said layers being sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but at a CdTe substrate temperature less than about 575° C.

Claim 30

A process as defined in claim 21 and further including the step of heating in an oxygen-containing atmosphere either or both of said layers after their deposition, for a time and at a temperature, and in an amount of oxygen, which are sufficient to provide a conversion efficiency that is enhanced over the efficiency of a cell produced without said post-deposition heating.

Claim 31

A process as defined in claim 21, wherein the deposition of said CdTe is in an atmosphere containing at least about 1 torr oxygen.

Claim 32

A process of converting incident radiation into electrical power, comprising the steps of (a) exposing to said radiation, a photovoltaic cell comprising first and second contiguous polycrystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, said layers together containing oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell that is produced without said oxygen atoms, and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent or semi-transparent to said incident radiation; and (b) drawing off power from said cell in proportion to said enhanced conversion efficiency.

Claim 33

A process of converting incident radiation into electrical power, comprising the steps of (a) exposing to said radiation, a photovoltaic cell comprising first and second contiguous polycrystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, said layers together containing oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell that is produced without said oxygen atoms, and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent or semi-transparent to said incident radiation; and (b) drawing off power from said cell in proportion to said enhanced conversion efficiency.

Claim 34

A process of converting incident radiation into electrical power, comprising the steps of (a) exposing to said radiation, a photovoltaic cell comprising first and second contiguous polycrystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, at least one of said layers being formed in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, which are sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but without being formed in said oxygen-containing atmosphere; and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent of semitransparent to said incident radiation; the total combined thickness of said layers not exceeding about 10 microns; and (b) drawing off power from said cell in proportion to said enhanced conversion efficiency.

Claim 35

A process of converting incident radiation into electrical power, comprising the steps of (a) exposing to said radiation, a photovoltaic cell comprising first and second contiguous polycrystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, at least one of said layers being formed in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, which are sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but without being formed in said oxygen-containing atmosphere; and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent of semitransparent to said incident radiation; the total combined thickness of said layers not exceeding about 10 microns; and (b) drawing off power from said cell in proportion to said enhanced conversion efficiency.

Claim 36

In a photovoltaic cell comprising first and second contiguous crystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein both said cadmium telluride and said cadium sulfide are polycrystalline, and together said layers contain oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell generally identical in structure but containing only the amount of oxygen atoms in said layers that is present when the layers are formed in an atmosphere that has an oxygen partial pressure of less than 0.01 Torr.

Claim 37

In a photovoltaic cell comprising first and second contiguous crystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein both said cadmium telluride and said cadium sulfide are polycrystalline, and together said layers contain oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell generally identical in structure but containing only the amount of oxygen atoms in said layers that is present when the layers are formed in an atmosphere that has an oxygen partial pressure of less than 0.01 Torr.

Claim 38

A cell as defined in claim 27, wherein one of said electrodes is a layer of conductive oxide in low-impedance contact with at least part of said CdS layer, said oxide layer being transparent or semi-transparent to incident radiation.

Claim 39

A cell as defined in claim 28, wherein said oxide is indium tin oxide.

Claim 40

A cell as defined in claim 28, wherein the other of said electrodes is a layer of metal in low-impedance contact with at least part of said CdTe layer.

Claim 41

A cell as defined in claim 30, wherein said metal is gold.