US4374392A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic integrated circuit interconnection and fabrication method
Assignee: Lockheed Martin Corp
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Filing: 1980-11-25
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Granted: 1983-02-15
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Expires: 2000-11-25
Abstract
Abstract A monolithic integrated circuit incorporates a substrate of III-V material having an interconnection pattern disposed on a surface thereof. An epitaxial layer is grown on the substrate surface such that it overgrows the interconnection pattern, and a plurality of circuit elements, formed on the surface of the epitaxial layer, are interconnected by contacts which extend from the epitaxial layer surface to the underlying interconnection pattern.
Inventors
- 👤 Walter F. Reichert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/20; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
54 words
A monolithic integrated circuit, comprising: a substrate of III-V material having a surface; an interconnection pattern disposed on the substrate surface; an epitaxial layer disposed on the substrate surface and the interconnection pattern; and a plurality of circuit elements disposed on the epitaxial surface, each element having a portion which contacts the interconnection pattern.
Claim 2
Dependent Claim
54 words
A monolithic integrated circuit, comprising: a substrate of III-V material having a surface; an interconnection pattern disposed on the substrate surface; an epitaxial layer disposed on the substrate surface and the interconnection pattern; and a plurality of circuit elements disposed on the epitaxial surface, each element having a portion which contacts the interconnection pattern.
Claim 3
Dependent Claim
12 words
A circuit in accordance with claim 1, wherein: the substrate is GaAs.
Claim 4
Dependent Claim
20 words
A circuit in accordance with claim 1, wherein: the interconnection pattern comprises a relatively thin film of a refractory material.
Claim 5
Dependent Claim
21 words
A circuit in accordance with claim 3, wherein: the refractory metal is selected from the group consisting of molybdenum and tungsten.
Claim 6
Dependent Claim
22 words
A circuit in accordance with claim 1, wherein: the circuit elements contact the interconnection pattern via metallized openings in the epitaxial layer.
Claim 7
Dependent Claim
29 words
A circuit in accordance with claim 1, wherein: the epitaxial layer includes a buffer layer disposed on the substrate surface and an active layer disposed on the buffer layer.
Claim 8
Dependent Claim
41 words
A circuit in accordance with claims 1 or 6, further comprising: an FET having spaced source, gate and drain electrodes on the epitaxial layer; the source electrode contacting a first interconnection pattern; and the drain electrode contacting a second interconnection pattern.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |