Patent US4374334A successfully refreshed from Google Patents.
US4374334A
Expired / Lapsed
US
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Signal comparator apparatus
Assignee: General Electric Co
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Filing: 1981-03-23
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Granted: 1983-02-15
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Expires: 2001-03-23
Abstract
Abstract A first surface charge transistor and a second surface charge transistor are provided in a common substrate. During a first phase of a cycle of operation a first voltage signal is applied to the transfer gate of the first transistor and a second voltage signal is applied to the transfer gate of the second transistor. During a second phase of the cycle of operation, the first voltage signal is applied to the transfer gate of the second transistor and the second voltage signal is applied to the transfer gate of the first transistor. During the first phase the source region and the transfer gate region of each of the transistors are equilibrated. The receiver regions or nodes of each of the transistors are precharged and then floated or isolated. During the second phase of the cycle, the receiver nodes accumulate an amount of charge proportional to the change of voltage resulting from the switching of the signals. Charge is received, however, only if a transfer gate becomes more positive (for n-channel transistors). The receiver node associated with the more positive signal in the first phase of operation will therefore remain charged while the receiver node associated with the more negative signal will be discharged, by transfer of charge, toward ground. The extent of the potential change is proportional to the difference between the two voltage signals and the gain of the surface charge transistors.
Inventors
- 👤 William E. Engeler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:04
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; G; G01; G01R; G01R19/00; G01R19/0038; H03; H03K; H03K5/00; H03K5/22; H03K5/24; H03K5/2472; H03K5/249
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
499 words
In combination, a semiconductor substrate of one conductivity type having a major surface, a first storage electrode insulatingly overlying a first storage region of said substrate adjacent said major surface, a first gating electrode insulatingly overlying a first barrier region of said substrate adjacent said major surface and coupled to said first storage region, a first region of opposite conductivity type in said major surface and coupled to said first barrier region, a second storage electrode insulatingly overlying a second storage region of said substrate adjacent said major surface, a second gating electrode insulatingly overlying a second barrier region of said substrate adjacent said major surface and coupled to said second storage region, a second region of opposite conductivity type in said major surface and coupled to said second barrier region, means for applying during a first period of time a first voltage signal to said first gating electrode to establish in said first barrier region a surface potential corresponding to the level of said first voltage signal, means for applying during said first period of time a second voltage signal to said second gating electrode to establish in said second barrier region a surface potential corresponding to the level of said second voltage signal, means for applying a first storage voltage to said first and said second storage electrodes sufficient to establish surface inversion in said first and said second storage regions at the surface potentials of said first and said second barrier regions produced by said first and second voltage signals, means for providing charge to said first storage region sufficient to establish equilibrium of potentials between said first storage region and said first barrier regions, means for providing charge to said second storage region sufficient to establish equilibrium of potentials between said second storage region and said second barrier region, means for charging said first region of opposite conductivity type and said second region of opposite conductivity type to a predetermined potential which is energetically lower for minority carriers in said substrate than the surface potentials of said first and second barrier regions during said first period, means for electrically isolating said first and second regions of opposite conductivity type from said charging means during a second period of time, means for disconnecting said first voltage signal from said first gating electrode and said second voltage signal from said second gating electrode during a first subperiod of said second period, means for connecting said first voltage signal to said second gating electrode and for connecting said second voltage signal to said first gating electrode during a succeeding second subperiod of said second period, whereby charge flows into one of the regions of opposite conductivity type during the second subperiod of said second period changing the potential thereof with respect to the other of said regions of opposite conductivity type if the surface potential of the one of said first and second barrier regions adjacent thereto is energetically lowered in potential for minority carriers in said substrate.
Claim 2
Dependent Claim
499 words
In combination, a semiconductor substrate of one conductivity type having a major surface, a first storage electrode insulatingly overlying a first storage region of said substrate adjacent said major surface, a first gating electrode insulatingly overlying a first barrier region of said substrate adjacent said major surface and coupled to said first storage region, a first region of opposite conductivity type in said major surface and coupled to said first barrier region, a second storage electrode insulatingly overlying a second storage region of said substrate adjacent said major surface, a second gating electrode insulatingly overlying a second barrier region of said substrate adjacent said major surface and coupled to said second storage region, a second region of opposite conductivity type in said major surface and coupled to said second barrier region, means for applying during a first period of time a first voltage signal to said first gating electrode to establish in said first barrier region a surface potential corresponding to the level of said first voltage signal, means for applying during said first period of time a second voltage signal to said second gating electrode to establish in said second barrier region a surface potential corresponding to the level of said second voltage signal, means for applying a first storage voltage to said first and said second storage electrodes sufficient to establish surface inversion in said first and said second storage regions at the surface potentials of said first and said second barrier regions produced by said first and second voltage signals, means for providing charge to said first storage region sufficient to establish equilibrium of potentials between said first storage region and said first barrier regions, means for providing charge to said second storage region sufficient to establish equilibrium of potentials between said second storage region and said second barrier region, means for charging said first region of opposite conductivity type and said second region of opposite conductivity type to a predetermined potential which is energetically lower for minority carriers in said substrate than the surface potentials of said first and second barrier regions during said first period, means for electrically isolating said first and second regions of opposite conductivity type from said charging means during a second period of time, means for disconnecting said first voltage signal from said first gating electrode and said second voltage signal from said second gating electrode during a first subperiod of said second period, means for connecting said first voltage signal to said second gating electrode and for connecting said second voltage signal to said first gating electrode during a succeeding second subperiod of said second period, whereby charge flows into one of the regions of opposite conductivity type during the second subperiod of said second period changing the potential thereof with respect to the other of said regions of opposite conductivity type if the surface potential of the one of said first and second barrier regions adjacent thereto is energetically lowered in potential for minority carriers in said substrate.
Claim 3
Dependent Claim
29 words
The combination of claim 1 including means for sensing the change in potential of said one region of opposite conductivity type during the second subperiod of said second period.
Claim 4
Dependent Claim
75 words
The combination of claim 1 in which the capacitance of said first storage electrode with respect to said substrate is relatively large in relation to the capacitance of said first region of opposite conductivity with respect to said substrate, and in which the capacitance of said second storage electrode with respect to said substrate is relatively large in relation to the capacitance of said second region of opposite conductivity type with respect to said substrate.
Claim 5
Dependent Claim
74 words
The combination of claim 1 in which the capacitance of said first storage electrode with respect to said substrate is substantially the same as the capacitance of said second storage electrode with respect to said substrate, and in which the capacitance of said first region of opposite conductivity type with respect to the substrate is substantially the same as the capacitance of said second region of opposite conductivity type with respect to said substrate.
Claim 6
Dependent Claim
238 words
The combination of claim 1 in which said means for providing charge to said first storage region and said second storage region and said means for charging said first region of opposite conductivity type and said second region of opposite conductivity type to said predetermined potential comprises: means for raising during a first subperiod of said first period the potential of each of said first and second regions of opposite conductivity type for minority carriers in said substrate to a value above the surface potential of said first barrier region and second barrier region whereby charge flows from each of said first and second regions of opposite conductivity type into a respective one of said first storage region and said second storage region, and means for lowering during a succeeding second subperiod of said first period the potential of each of said first and second regions of opposite conductivity type for minority carriers in said substrate to a value which is lower than the surface potential of said first and second barrier regions whereby charge flows from said first storage region to said first region of opposite conductivity until the potential of said first storage region equilibrates with the potential of said first barrier region and charge flows from said second storage region to said second region of opposite conductivity type until the potential of said second storage region equilibrates with the potential of said second barrier region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |