Method for manufacturing semiconductor elements from amorphous silicon

Claim 1

A method of manufacturing semiconductor elements of amorphous silicon which convert light into electrical energy comprising: (a) providing a vessel defining a chamber; (b) supplying a silicon compound to the chamber; (c) providing two facing spaced apart electrodes in said chamber for supporting at least one substrate for receiving deposited amorphous silicon thereon, the substrate disposed between the electrodes; (d) passing an electric current which alternates in the RF range in the chamber and between the electrodes to produce an electric field of 400 to 800 volts per cm. and to produce a glow discharge with free electrons in the chamber to deposit amorphous silicon from the silicon compound on to the substrate; (e) providing a central pole plate and an outer annular surrounding pole plate forming a closed loop around said central pole plate, and providing at least one magnet having one pole connected to said central pole plate and an opposite pole connected to said outer surrounding pole plate, said pole plates positioned on a side of at least one of said electrodes away from the glow discharge in said chamber and said at least one magnet positioned on a side of said pole plates away from said at least one electrode; (f) the magnet providing a magnetic field of 100 to 300 gauss in the vessel which is directed substantially transversely to the electric field and is of a magnitude to conduct the electrons have the substrate along closed paths; and (g) the magnitude of the magnetic field provided being strong enough so that the closed paths of the electrons are in the form of cycloids with radii of the cycloids being smaller than the spacing between the electrodes.

Claim 2

A method of manufacturing semiconductor elements of amorphous silicon which convert light into electrical energy comprising: (a) providing a vessel defining a chamber; (b) supplying a silicon compound to the chamber; (c) providing two facing spaced apart electrodes in said chamber for supporting at least one substrate for receiving deposited amorphous silicon thereon, the substrate disposed between the electrodes; (d) passing an electric current which alternates in the RF range in the chamber and between the electrodes to produce an electric field of 400 to 800 volts per cm. and to produce a glow discharge with free electrons in the chamber to deposit amorphous silicon from the silicon compound on to the substrate; (e) providing a central pole plate and an outer annular surrounding pole plate forming a closed loop around said central pole plate, and providing at least one magnet having one pole connected to said central pole plate and an opposite pole connected to said outer surrounding pole plate, said pole plates positioned on a side of at least one of said electrodes away from the glow discharge in said chamber and said at least one magnet positioned on a side of said pole plates away from said at least one electrode; (f) the magnet providing a magnetic field of 100 to 300 gauss in the vessel which is directed substantially transversely to the electric field and is of a magnitude to conduct the electrons have the substrate along closed paths; and (g) the magnitude of the magnetic field provided being strong enough so that the closed paths of the electrons are in the form of cycloids with radii of the cycloids being smaller than the spacing between the electrodes.