Patent US4368689A successfully refreshed from Google Patents.
US4368689A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Beam source for deposition of thin film alloys
Assignee: Conexant Systems LLC
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Filing: 1980-12-29
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Granted: 1983-01-18
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Expires: 2000-12-29
Abstract
Abstract The invention is an apparatus and method for achieving thin film deposition, of uniform composition, from evaporated alloys. A source of wire alloy, selected for the particular thin film deposition on a substrate, is continuously fed through a region of high speed electron bombardment confined to an end of the wire, for evaporation of the wire in the vicinity of the substrate. An ion flux detector controls the rate of feeding of the wire source in accordance with the detected flux to lay down a uniform thin film of predetermined thickness. A high potential is established between the wire and the source of the electrons and the liberated electrons are guided by the electric field toward the end of the wire being evaporated, which serves as an anode.
Inventors
- 👤 Addison B. Jones
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:32
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/28; C23C14/30; C23C14/246
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
77 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; impacting means comprising electrons and a source of high voltage therefor with said source being at a negative potential relative to said wire; means for advancing the wire to attain the desired deposition rate; detector means for measuring deposition rate in the vicinity of said end of the wire; and, said means for advancing controlling wire feed in response to said detector means.
Claim 2
Dependent Claim
77 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; impacting means comprising electrons and a source of high voltage therefor with said source being at a negative potential relative to said wire; means for advancing the wire to attain the desired deposition rate; detector means for measuring deposition rate in the vicinity of said end of the wire; and, said means for advancing controlling wire feed in response to said detector means.
Claim 3
Dependent Claim
22 words
The source of claim 1, further comprising: means for controlling electron bombardment power of said source in response to said detector means.
Claim 4
Dependent Claim
31 words
The source of claim 1, wherein: said means for impacting comprising shield means at the potential of the electron source means for guiding the electrons toward said end of the wire.
Claim 5
Dependent Claim
30 words
The source of claim 3, further comprising water cooled sleeve means adjacent said wire near said end to serve as heat transfer means for the wire other than said end.
Claim 6
Dependent Claim
60 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; means for impacting the wire adjacent to and at an end thereof by high speed particles to vaporize it; means for advancing the wire to attain the desired deposition rate; and, detector and control means monitoring the height of the wire end to control wire advance.
Claim 7
Dependent Claim
60 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; means for impacting the wire adjacent to and at an end thereof by high speed particles to vaporize it; means for advancing the wire to attain the desired deposition rate; and, detector and control means monitoring the height of the wire end to control wire advance.
Claim 8
Dependent Claim
60 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; means for impacting the wire adjacent to and at an end thereof by high speed particles to vaporize it; means for advancing the wire to attain the desired deposition rate; and, detector and control means monitoring the temperature of the wire end to control wire advance.
Claim 9
Dependent Claim
60 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; means for impacting the wire adjacent to and at an end thereof by high speed particles to vaporize it; means for advancing the wire to attain the desired deposition rate; and, detector and control means monitoring the temperature of the wire end to control wire advance.
Claim 10
Dependent Claim
69 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; means for impacting the wire adjacent to and at an end thereof by high speed particles to vaporize it; means for advancing the wire to attain the desired deposition rate; and, detector means monitoring a characteristic of the wire end; and control means responsive to the detector means for controlling power to the electron source.
Claim 11
Dependent Claim
69 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; means for impacting the wire adjacent to and at an end thereof by high speed particles to vaporize it; means for advancing the wire to attain the desired deposition rate; and, detector means monitoring a characteristic of the wire end; and control means responsive to the detector means for controlling power to the electron source.
Claim 12
Dependent Claim
66 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; means for impacting the wire adjacent to and at an end thereof by high speed particles to vaporize it; means for advancing the wire to attain the desired deposition rate; and, detector means monitoring the deposition rate; and control means responsive to the detector means to control power to the electron source.
Claim 13
Dependent Claim
66 words
A thin film alloy deposition source, comprising in combination: a source of alloy wire; means for impacting the wire adjacent to and at an end thereof by high speed particles to vaporize it; means for advancing the wire to attain the desired deposition rate; and, detector means monitoring the deposition rate; and control means responsive to the detector means to control power to the electron source.
References Cited (Backward Citations)
US4237148A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-17 | 1986-07-19 | 1987-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-17 | 1990-07-19 | 1991-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-17 | 1994-07-19 | 1995-01-18 | $7700.00 | Window Closed / Lapsed |