US4368479A
Expired / Lapsed
US
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Silicon barrier Josephson junction configuration
Assignee: United States Department of the Navy
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Filing: 1980-10-29
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Granted: 1983-01-11
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Expires: 2000-10-29
Abstract
Abstract A planar, silicon barrier, Josephson junction and method of forming the junction which does not require expensive high-resolution, lithography techniques such as electron beam or x-ray. The method includes an etching mask-etch process which forms the basic structure configuration using a (110)-cut silicon wafer. Subsequent to the etching process the mask is removed and a superconducting film is deposited on the previously formed silicon surface to produce a single crystal silicon barrier with good electrical properties.
Inventors
- 👤 Kenneth L. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 01:11
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/12; Y; Y10; Y10S; Y10S505/00; Y10S505/825; Y10S505/873; Y10S505/874
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
58 words
A planar, silicon barrier, Josephson junction which comprises: a single-crystal silicon wafer; said silicon wafer including a barrier; said barrier being formed by oppositely disposed channels in the upper surface of said wafer on each side of said barrier; and a superconducting film laid on the bottom surface of each of said channels in contact with said barrier.
Claim 2
Dependent Claim
58 words
A planar, silicon barrier, Josephson junction which comprises: a single-crystal silicon wafer; said silicon wafer including a barrier; said barrier being formed by oppositely disposed channels in the upper surface of said wafer on each side of said barrier; and a superconducting film laid on the bottom surface of each of said channels in contact with said barrier.
Claim 3
Dependent Claim
26 words
A planar, silicon barrier, Josephson junction as claimed in claim 1 wherein: the thickness dimension between the channels forming said barrier is less than about 0.2μ.
Claim 4
Dependent Claim
29 words
A planar, silicon barrier, Josephson junction as claimed in claim 2 wherein: said single-crystal silicon wafer has an upper surface parallel with the (110) plane of said silicon wafer.
Claim 5
Dependent Claim
44 words
A planar, silicon barrier, Josephson junction as claimed in claim 3 wherein: said channels include vertical walls and wherein: the vertical walls of said channels are aligned along the directions in which (111) crystal planes intersect at right angles with said (110) crystal plane.
Claim 6
Dependent Claim
40 words
A planar, silicon barrier, Josephson junction as claimed in claim 4 further comprising: a layer of silicon nitride disposed upon said upper surface of said silicon wafer wherein said silicon nitride layer extends beyond the vertical walls of said channels.
Claim 7
Dependent Claim
18 words
A planar, silicon barrier, Josephson junction device as claimed in claim 5 wherein: said superconducting film is niobium.
References Cited (Backward Citations)
US4065742A
Cited
US4253230A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-10 | 1986-07-12 | 1987-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-10 | 1990-07-12 | 1991-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-10 | 1994-07-12 | 1995-01-11 | $7700.00 | Window Closed / Lapsed |