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US4366496A Expired / Lapsed US ⏱️ 0.0 years remaining

Optically activatable semiconductor component

Assignee: BBC Brown Boveri AG Switzerland
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Filing: 1981-03-10
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Granted: 1982-12-28
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Expires: 2001-03-10
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Abstract

Abstract An optically activatable semiconductor component having at least one light-sensitive surface area containing a light-sensitive PN junction which is biased in a nonconducting direction when exposed to light, wherein in order to avoid a reduction in the inhibiting voltage of the optically activatable semiconductor component, the light-sensitive PN junction leading to the light-sensitive surface of the component is shaped such that it has a simple, preferably circular or tubular form at the light-sensitive surface. In one embodiment, plural light-sensitive PN junctions extend to the light-sensitive surface defining several subareas. The technology is applicable to thyristors, diodes, transistors or other light-sensitive semiconductor components.

Inventors

  • 👤 Andre Jaecklin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 07:35
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/148; H10F30/00; H10F30/20; H10F30/21; H10F30/26; H10F30/263; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 198 words
A light activatable thyristor formed of four zones of alternating conductivity types including a cathode emitter zone, a cathode base zone, an anode base zone and an anode zone, respectively, wherein said cathode and anode zones respectively face cathode side and anode side surfaces, wherein said cathode base zone and said anode base zone define a forward blocking PN-junction therebetween upon application of a biasing voltage from a biasing source, said forward blocking PN-junction emerging on said cathode side surface and being exposed to activating light from a light source, comprising: said anode base zone penetrating said cathode base zone and emerging to said cathode side surface through said cathode base zone such that said forward blocking junction formed therebetween on said cathode side surface exhibits at least one closed geometric form, and said at least one closed geometric form circumscribing on said cathode side surface only said emerging anode base zone free of any other zone; said light-sensitive forward blocking PN-junction defining at least one tube having a substantially smooth circumference and characterized by a length L and width B, wherein the ratio of the length L to the width B is less or equal to 5:1.
Claim 2
Dependent Claim 198 words
A light activatable thyristor formed of four zones of alternating conductivity types including a cathode emitter zone, a cathode base zone, an anode base zone and an anode zone, respectively, wherein said cathode and anode zones respectively face cathode side and anode side surfaces, wherein said cathode base zone and said anode base zone define a forward blocking PN-junction therebetween upon application of a biasing voltage from a biasing source, said forward blocking PN-junction emerging on said cathode side surface and being exposed to activating light from a light source, comprising: said anode base zone penetrating said cathode base zone and emerging to said cathode side surface through said cathode base zone such that said forward blocking junction formed therebetween on said cathode side surface exhibits at least one closed geometric form, and said at least one closed geometric form circumscribing on said cathode side surface only said emerging anode base zone free of any other zone; said light-sensitive forward blocking PN-junction defining at least one tube having a substantially smooth circumference and characterized by a length L and width B, wherein the ratio of the length L to the width B is less or equal to 5:1.
Claim 3
Dependent Claim 14 words
A thyristor according to claim 1 wherein said closed geometric form comprises: a circle.
Claim 4
Dependent Claim 37 words
A thyristor according to claim 1, further comprising: said at least one tube formed in a curve having a curvature radius r which is at least 5 times greater than the width B of the geometric form.
Claim 5
Dependent Claim 21 words
An optically activatable semiconductor component according to claims 1 or 2, further comprising: at least two of said closed geometric forms.

References Cited (Backward Citations)

US3943550A Cited
US3987476A Cited
US4142201A Cited
DE2739182A1 Cited
US4186409A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-12-27 1986-06-28 1986-12-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-12-27 1990-06-28 1990-12-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-12-27 1994-06-28 1994-12-28 $7700.00 Window Closed / Lapsed

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