Switched-capacity amplifier, switched-capacity filter and charge-transfer filter comprising such an amplifier

Claim 2

A circuit having a plurality of integrated capacities comprising (a) a semiconductor substrate of one conductivity type; (b) a layer of silica on said substrate; (c) each of said capacities comprising, (i) an upper and a lower layer of polycrystalline silicon integrated in said silica and parallel to the substrate; (ii) two layers of aluminum formed on the silica and insulated from each other, and each being connected to one of the polycrystalline layers respectively; and the plates of each integrated capacity being formed by an aluminum layer and its respective polycrystalline silicon layer; and a terminal, designated B1, being associated with the plate of the capacity comprising the lower layer of polycrystalline silicon; (d) one of said integrated capacities having its B1 terminal connected to ground; (e) a zone of opposite conductivity type at the semiconductor silica interface facing said polycrystalline silicon layers of at least another of said integrated capacities; and (f) a voltage follower stage having one control terminal connected to said B1 terminal of said other integrated capacity and the other control terminal connected to said zone of said other integrated capacity; whereby said circuit is a switched capacity amplifier.

Claim 3

The circuit according to claim 1, wherein each voltage-follower stage is formed by MOS transistors in series between a bias voltage and ground, the terminal B1 of the integrated capacity being connected to the control terminal of the transistor connected to the bias voltage; and said zone and electrode common to the two transistors being connected to the control terminal of the transistor connected to ground.

Claim 4

The circuit according to claim 1, wherein each voltage-follower stage is integrated in the same semiconductor substrate as the capacities.

Claim 5

The circuit according to claim 1, comprising an output stage connected to output terminals A and B of the amplifier, said output stage being formed by a first voltage-follower stage (T4-T5) connected to terminal A in series with an MOS transistor (T3), having a control terminal and receiving thereon a periodic signal φ2, said transistor being followed by a second voltage-follower stage (T6-T7), and a holding capacity (C20) connected between terminal B and a joint common to the second follower stage (T6-T7) and to said MOS transistor (T3), the terminal B1 of said capacity being connected to said common point.

Claim 6

A switched capacity filter having a plurality of integrated capacities comprising (a) a semiconductor substrate of one conductivity type; (b) a layer of silica on said substrate; (c) each of said capacities comprising, (i) an upper and a lower layer of polycrystalline silicon integrated in said silica and parallel to the substrate; (ii) two layers of aluminum formed on the silica and insulated from each other, and each being connected to one of the polycrystalline layers respectively; and the plates of each integrated capacity being formed by an aluminum layer and its respective polycrystalline silicon layer; and a terminal, designated B1, being associated with the plate of the capacity comprising the lower layer of polycrystalline silicon; (d) one of said integrated capacities having its B1 terminal connected to ground; (e) a zone of opposite conductivity type at the semiconductor silica interface facing said polycrystalline silicon layers of at least another of said integrated capacities; (f) a voltage follower stage having one control terminal connected to said B1 terminal of said other integrated capacity and the other control terminal connected to said zone of said other integrated capacity; whereby said circuit is a switched capacity amplifier; and (g) further comprising a switched capacity filtering cell formed from capacities and MOS transistors connected between said terminal B1 of said at least one other integrated capacity and the B1 terminal connected to ground; whereby said circuit forms with said amplifier a switched-capacity filter.

Claim 7

A switched capacity filter having a plurality of integrated capacities comprising (a) a semiconductor substrate of one conductivity type; (b) a layer of silica on said substrate; (c) each of said capacities comprising, (i) an upper and a lower layer of polycrystalline silicon integrated in said silica and parallel to the substrate; (ii) two layers of aluminum formed on the silica and insulated from each other, and each being connected to one of the polycrystalline layers respectively; and the plates of each integrated capacity being formed by an aluminum layer and its respective polycrystalline silicon layer; and a terminal, designated B1, being associated with the plate of the capacity comprising the lower layer of polycrystalline silicon; (d) one of said integrated capacities having its B1 terminal connected to ground; (e) a zone of opposite conductivity type at the semiconductor silica interface facing said polycrystalline silicon layers of at least another of said integrated capacities; (f) a voltage follower stage having one control terminal connected to said B1 terminal of said other integrated capacity and the other control terminal connected to said zone of said other integrated capacity; whereby said circuit is a switched capacity amplifier; and (g) further comprising a switched capacity filtering cell formed from capacities and MOS transistors connected between said terminal B1 of said at least one other integrated capacity and the B1 terminal connected to ground; whereby said circuit forms with said amplifier a switched-capacity filter.

Claim 8

The filter according to claim 5, wherein capacities of the switched-capacity amplifier merge with a capacity of the filtering cell, said filtering cell comprising two resistances in series, one being formed by two MOS transistors (T8,T9) in series and an integrated capacity (C1) between their common point and ground; the other by an MOS transistor (T10) in series with transistors (T11,T12) of the amplifier and an integrated capacity (C5) between their common point and ground; the terminals B1 of said two integrated capacities (C1,C5) being connected to ground; the filtering cell also comprising a looping integrated capacity (C2) between an output (V5) of the amplifier and the point common (G) of the resistors; terminal B1 of this looping integrated capacity being connected to the output of the amplifier.

Claim 9

A change transfer filter having a plurality of integrated capacities comprising (a) a semiconductor substrate of one conductivity type; (b) a layer of silica on said substrate; (c) each of said capacities comprising, (i) an upper and a lower layer of polycrystalline silicon integrated in said silica and parallel to the substrate; (ii) two layers of aluminum formed on the silica and insulated from each other, and each being connected to one of the polycrystalline layers respectively; and the plates of each integrated capacity being formed by an aluminum layer and its respective polycrystalline silicon layer; and a terminal, designated B1, being associated with the plate of the capacity comprising the lower layer of polycrystalline silicon; (d) one of said integrated capacities having its B1 terminal connected to ground; (e) a zone of opposite conductivity type at the semiconductor silica interface facing said polycrystalline silicon layers of at least another of said integrated capacities; (f) a voltage follower stage having one control terminal connected to said B1 terminal of said other integrated capacity and the other control terminal connected to said zone of said other integrated capacity; whereby said circuit is a switched capacity amplifier; and (g) further comprising cut electrodes and a differential amplifier receiving voltages obtained from charges taken from said cut electrodes whereby a charge transfer filter is formed.

Claim 10

A change transfer filter having a plurality of integrated capacities comprising (a) a semiconductor substrate of one conductivity type; (b) a layer of silica on said substrate; (c) each of said capacities comprising, (i) an upper and a lower layer of polycrystalline silicon integrated in said silica and parallel to the substrate; (ii) two layers of aluminum formed on the silica and insulated from each other, and each being connected to one of the polycrystalline layers respectively; and the plates of each integrated capacity being formed by an aluminum layer and its respective polycrystalline silicon layer; and a terminal, designated B1, being associated with the plate of the capacity comprising the lower layer of polycrystalline silicon; (d) one of said integrated capacities having its B1 terminal connected to ground; (e) a zone of opposite conductivity type at the semiconductor silica interface facing said polycrystalline silicon layers of at least another of said integrated capacities; (f) a voltage follower stage having one control terminal connected to said B1 terminal of said other integrated capacity and the other control terminal connected to said zone of said other integrated capacity; whereby said circuit is a switched capacity amplifier; and (g) further comprising cut electrodes and a differential amplifier receiving voltages obtained from charges taken from said cut electrodes whereby a charge transfer filter is formed.

Claim 11

A circuit having a plurality of integrated capacities comprising (a) a semiconductor substrate of one conductivity type; (b) a layer of silica on said substrate; (c) each of said capacities comprising, (i) an upper and lower layer of polycrystalline silicon integrated in said silica and parallel to the substrate; (ii) two layers of aluminum formed on the silica and insulated from each other, and each being connected to one of the polycrystalline layers respectively; and the plates of each integrated capacity being formed by an aluminum layer and its respective polycrystalline silicon layer; and a terminal, designated B1, being associated with the plate of the capacity comprising the lower layer of polycrystalline silicon; (d) a zone of opposite conductivity type at the semiconductor silica interface facing said polycrystalline silicon layers of at least another of said integrated capacities; and (e) a voltage follower stage having one control terminal connected to said B1 terminal of each integrated capacity and the other control terminal connected to said zone of each integrated capacity, whereby said circuit is a differential switched capacity amplifier.

Claim 12

A circuit having a plurality of integrated capacities comprising (a) a semiconductor substrate of one conductivity type; (b) a layer of silica on said substrate; (c) each of said capacities comprising, (i) an upper and lower layer of polycrystalline silicon integrated in said silica and parallel to the substrate; (ii) two layers of aluminum formed on the silica and insulated from each other, and each being connected to one of the polycrystalline layers respectively; and the plates of each integrated capacity being formed by an aluminum layer and its respective polycrystalline silicon layer; and a terminal, designated B1, being associated with the plate of the capacity comprising the lower layer of polycrystalline silicon; (d) a zone of opposite conductivity type at the semiconductor silica interface facing said polycrystalline silicon layers of at least another of said integrated capacities; and (e) a voltage follower stage having one control terminal connected to said B1 terminal of each integrated capacity and the other control terminal connected to said zone of each integrated capacity, whereby said circuit is a differential switched capacity amplifier.