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US4366334A
Expired / Lapsed
US
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Photovoltaic cell usable as a solar cell
Assignee: Thales SA
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Filing: 1981-01-29
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Granted: 1982-12-28
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Expires: 2001-01-29
Abstract
Abstract The invention relates to a low cost photovoltaic cell, using a minimum thickness layer of semiconductor compounds able to provide the photovoltaic effect and specifically in polycrystalline form. On a molybdenum sheet an auxiliary polycrystalline germanium layer is deposited in order to facilitate subsequent depositions. This is followed by an intermediate polycrystalline layer of gallium aluminum arsenide and an active layer of polycrystalline gallium arsenide. The presence of the intermediate layer with a wider forbidden band than that of the active layer compensates the effect on the efficiency of the limited thickness of the active layer.
Inventors
- 👤 Baudouin DE Cremoux
- 👤 Pierre Poulain
- 👤 Nicole Sol
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:50
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/163; H10F10/18; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
129 words
A photovoltaic cell of the type comprising an ohmic bottom contact comprising a metal layer coated with a semiconductor layer, an active semiconductor layer whose thickness is approximately the same as the diffusion length of the semiconductor material, a semiconductor or metallic layer forming a rectifying junction with the active layer in such a way that the assembly can have a photovoltaic effect, further comprising between the active semiconductor layer and the ohmic bottom contact an intermediate layer which is much thinner than the active semiconductor layer and which is formed from a semiconductor compound with a forbidden band width greater than that of the active layer, the crystalline parameters of the materials of the intermediate layer and the active layer differing by 5 parts per 1000 or less.
Claim 2
Dependent Claim
129 words
A photovoltaic cell of the type comprising an ohmic bottom contact comprising a metal layer coated with a semiconductor layer, an active semiconductor layer whose thickness is approximately the same as the diffusion length of the semiconductor material, a semiconductor or metallic layer forming a rectifying junction with the active layer in such a way that the assembly can have a photovoltaic effect, further comprising between the active semiconductor layer and the ohmic bottom contact an intermediate layer which is much thinner than the active semiconductor layer and which is formed from a semiconductor compound with a forbidden band width greater than that of the active layer, the crystalline parameters of the materials of the intermediate layer and the active layer differing by 5 parts per 1000 or less.
Claim 3
Dependent Claim
30 words
A photovoltaic cell according to claim 1, wherein the active layer comprises polycrystalline gallium arsenide and the intermediate layer is made from polycrystalline Ga 1-x Al x As with 0.3≦x≦0.5.
Claim 4
Dependent Claim
37 words
A photovoltaic cell according to claim 1, wherein said ohmic bottom contact comprises a metal sheet covered with a polycrystalline germanium layer contiguous with the intermediate layer, the thickness of said intermediate layer being approximately 0.1 micron.
Claim 5
Dependent Claim
53 words
A photovoltaic cell according to claim 3, wherein the germanium layer, the active semiconductor layer and the intermediate layer have n type conductivity, the active layer being covered with a highly conducting metal layer of thickness so as to be transparent to light and forming a Schottky contact with the active semiconductor layer.
Claim 6
Dependent Claim
46 words
A photovoltaic cell according to claim 3, wherein the germanium layer, the active semiconductor layer and the intermediate layer have p type conductivity and wherein an n type semiconductor layer with a wider forbidden band than that of the active layer is deposited on the latter.
Claim 7
Dependent Claim
46 words
A photovoltaic cell according to claim 4, wherein the concentration of n type dopant in the gallium arsenide active layer is approximately 10 16 to 10 17 cm -3 and the concentration of n type dopant in the intermediate layer exceeds 10 17 cm -3 .
Claim 8
Dependent Claim
39 words
A photovoltaic cell according to claim 5, wherein the active semiconductor layer is gallium arsenide, the intermediate layer is Ga 1-x Al x As with 0.3≦x≦0.5 and the n type layer is Ga 1-y Al y As with 0.5≦y<1.
Claim 9
Dependent Claim
64 words
A photovoltaic cell according to claim 7, wherein the concentration of the n type dopant in the active semiconductor layer is 10 16 to 10 17 cm -3 and wherein the concentration of the p type dopant in the intermediate layer exceeds 10 17 and wherein the concentration of the n type dopant in the n type layer exceeds 10 18 cm -3 .
Claim 10
Dependent Claim
46 words
A photovoltaic cell according to claim 7, wherein the n type layer is covered by a GaAs layer which is itself covered by a metal layer, the assembly of said two layers being patterned in such a way as to permit the passage of light therethrough.
Claim 11
Dependent Claim
21 words
A photovoltaic cell according to claim 7, wherein the parameter y varies progressively through the thickness of the n type layer.
Claim 12
Dependent Claim
30 words
A photovoltaic cell according to claim 1, wherein the active semiconductor layer is of n type GaAs, and the intermediate layer comprises a compound of Ga, In, As and P.
Claim 13
Dependent Claim
34 words
A photovoltaic cell according to claim 1, wherein the active semiconductor layer is of p type GaAs, and the n type layer and the intermediate layer comprises compounds of Ga, In, As and P.
Claim 14
Dependent Claim
27 words
A photovoltaic cell according to claim 1, wherein the active semiconductor layer is InP, and the intermediate layer comprises a compound of In, P, Cd and S.
References Cited (Backward Citations)
US3990101A
Cited
US4278830A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-27 | 1986-06-28 | 1986-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-27 | 1990-06-28 | 1990-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-27 | 1994-06-28 | 1994-12-28 | $7700.00 | Window Closed / Lapsed |