US4365319A
Expired / Lapsed
US
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Semiconductor memory device
Assignee: Fujitsu Ltd
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Filing: 1980-11-12
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Granted: 1982-12-21
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Expires: 2000-11-12
Abstract
Abstract A semiconductor device, in which a redundancy memory cell array is incorporated with a main memory cell matrix. One memory cell array is selected by two kinds of decoders and drivers. When the redundancy memory cell array is selected by a decoder, the decoder disables one kind of the decoders and drivers directly and, as a result, the other kind of the decoders and drivers are also disabled.
Inventors
- 👤 Yoshihiro Takemae
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:45
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/78; G11C29/80; G11C29/806
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
334 words
A semiconductor memory device comprising: a main memory cell matrix having a plurality of sub memory cell matrixes, each sub memory cell matrix having a plurality of memory cell arrays; a redundancy memory cell array incorporated into said main memory cell matrix; a first decoder means having a plurality of inputs for receiving a first sub-part of a first address information having n bits and a first clock signal and having a plurality of outputs, for selecting one memory cell array parallel to said redundancy memory cell array and within each said sub memory cell matrix, in accordance with said first sub-part, of said first address information, said outputs of said first decoder means triggered by said first clock signal; a second decoder means having a plurality of inputs for receiving a second sub-part of said first address information having m bits and said outputs of said first decoder means and having a plurality of output drivers, for selecting one of said sub memory cell matrixes within said main memory cell matrix, in accordance with said second sub-part of said first address information, said output drivers of said second decoder means triggered by said outputs of said first decoder means and select one memory cell array within said memory cell matrix; a third decoder means having a plurality of inputs for receiving said first address information having n+m bits and an output operatively connected to said redundancy memory cell array and to said first decoder means for selecting said redundancy memory cell array and disabling said second decoder means, in accordance with said first address information, said output drivers of said second decoder means being disabled when said third decoder means selects said redundancy memory cell array; and a fourth decoder means having a plurality of inputs for receiving a second address information, for selecting one memory cell array perpendicular to said redundancy memory cell array within said main memory cell matrix and said redundancy memory array, in accordance with said second address information.
Claim 2
Dependent Claim
334 words
A semiconductor memory device comprising: a main memory cell matrix having a plurality of sub memory cell matrixes, each sub memory cell matrix having a plurality of memory cell arrays; a redundancy memory cell array incorporated into said main memory cell matrix; a first decoder means having a plurality of inputs for receiving a first sub-part of a first address information having n bits and a first clock signal and having a plurality of outputs, for selecting one memory cell array parallel to said redundancy memory cell array and within each said sub memory cell matrix, in accordance with said first sub-part, of said first address information, said outputs of said first decoder means triggered by said first clock signal; a second decoder means having a plurality of inputs for receiving a second sub-part of said first address information having m bits and said outputs of said first decoder means and having a plurality of output drivers, for selecting one of said sub memory cell matrixes within said main memory cell matrix, in accordance with said second sub-part of said first address information, said output drivers of said second decoder means triggered by said outputs of said first decoder means and select one memory cell array within said memory cell matrix; a third decoder means having a plurality of inputs for receiving said first address information having n+m bits and an output operatively connected to said redundancy memory cell array and to said first decoder means for selecting said redundancy memory cell array and disabling said second decoder means, in accordance with said first address information, said output drivers of said second decoder means being disabled when said third decoder means selects said redundancy memory cell array; and a fourth decoder means having a plurality of inputs for receiving a second address information, for selecting one memory cell array perpendicular to said redundancy memory cell array within said main memory cell matrix and said redundancy memory array, in accordance with said second address information.
Claim 3
Dependent Claim
40 words
A device as set forth in claim 1, wherein said redundancy memory cell array is incorporated with said main memory cell matrix as a row array, and said first and second address information are row and column address information, respectively.
Claim 4
Dependent Claim
40 words
A device as set forth in claim 1, wherein said redundancy memory cell array is incorporated with said main memory cell matrix as a column array, and said first and second address information are column and row address information, respectively.
Claim 5
Dependent Claim
51 words
A device as set forth in claim 1, wherein said third decoder means comprises a PROM for storing address information corresponding to the memory cell array containing a defective memory cell, said address is stored in said PROM when said defective memory cell is detected in said main memory cell matrix.
Claim 6
Dependent Claim
16 words
A device as set forth in claim 4, wherein said PROM is of a fuse type.
Claim 7
Dependent Claim
179 words
A device according to claim 5, wherein said third decoder further comprises: (a) a plurality of parallel transistors, each having (i) a gate for receiving a bit of said first address information, (ii) a drain for receiving a first supply voltage, and (iii) a source; (b) a plurality of fuses each having a first input correspondingly, operatively connected to said sources of said plurality of parallel transistors, and a second input; (c) a load transistor having (i) a gate for receiving a second clock signal, (ii) a drain operatively connected to said second input of each of said plurality of fuses, and (iii) a source for receiving a second supply voltage; (d) a pass transistor having (i) a gate for receiving said second supply voltage, (ii) a drain operatively connected to said drain of said load transistor, and (iii) a source; (e) a drive transistor having (i) a gate operatively connected to said source of said pass transistor, (ii) a drain corresponding to said output of said third decoder means, and (iii) a source for receiving a third clock.
Claim 8
Dependent Claim
71 words
A device as set forth in claim 1, wherein said first decoder means comprises: a plurality of NOR gates each having an input operatively connected to said output of said third decoder means and having inputs for receiving said first part of said first information and each having an output; and a plurality of AND gates each having an input operatively connected to said output of one of said NOR gates.
Claim 9
Dependent Claim
92 words
A device as set forth in claim 1, wherein said second decoder means comprises: a plurality of NOR gates each having an output and inputs for receiving said second sub-part of said first address information; and a plurality of AND gates each having inputs correspondingly, operatively connected to said output of one of said NOR gates and to one of said outputs of said first decoder means and each having an output operatively connected to one memory cell array, parallel to said redundancy memory cell array, of said main memory cell matrix.
Claim 10
Dependent Claim
132 words
A device according to claim 7 or 8, wherein each NOR gate of said plurality of NOR gates further comprises: (a) a load transistor having (i) a gate for receiving a second clock signal, (ii) a source for receiving a first supply voltage, and (iii) a drain; (b) a pass transistor having (i) a gate for receiving said first supply voltage, (ii) a source, and (iii) a drain; (c) a plurality of parallel transistors, each having (i) a gate corresponding to one of said inputs of said NOR gates, (ii) a drain for receiving a second supply voltage, and (iii) a source operatively connected to said drain of said load transistor, to said drain of said pass transistor, and to the source of the remaining transistors of said plurality of parallel transistors.
Claim 11
Dependent Claim
49 words
A device according to claim 7 or 8, wherein each AND gate of said plurality of AND gates further comprises a transistor having a gate and source respectively corresponding to said plurality of inputs of said AND gate, and a drain corresponding to said output of said AND gate.
References Cited (Backward Citations)
US3753244A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-20 | 1986-06-21 | 1986-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-20 | 1990-06-21 | 1990-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-20 | 1994-06-21 | 1994-12-21 | $7700.00 | Window Closed / Lapsed |