US4364077A
Expired / Lapsed
US
⏱️ 0.0 years remaining
P+ N Gallium phosphide photodiodes
Assignee: United States Department of the Air Force
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Filing: 1980-09-09
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Granted: 1982-12-14
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Expires: 2000-09-09
Abstract
Abstract A photodiode detector apparatus having a Gallium Phosphide ion implantation junction thereon to provide high quantum efficiency at wavelengths equal to or less than 0.5 micron incident wavelength while utilizing a shallow junction.
Inventors
- 👤 Alice M. Chiang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:31
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; H10F71/00; H10F71/127; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
110 words
A photodiode detector apparatus with high quantum efficiency comprising in combination: a semiconductor body of Group III-V compound having a photoelectric-sensitive surface, a thin film deposition of a second group III-V compound atop said semiconductor body to form a p-n junction, said p-n junction forms a photodiode being highly responsive to upper-level ultraviolet light radiation, said p-n junction has a shallow junction depth, said photodiode has a quantum efficiency greater than 30% at a wavelength of 0.4 μm, said photodiode is responsive to ultraviolet radiation having a wavelength smaller than 0.4 μm, said photodiode junction is formed by a GaP ion implantation, and said photodiode junction depth equals 0.15 μm.
Claim 2
Dependent Claim
110 words
A photodiode detector apparatus with high quantum efficiency comprising in combination: a semiconductor body of Group III-V compound having a photoelectric-sensitive surface, a thin film deposition of a second group III-V compound atop said semiconductor body to form a p-n junction, said p-n junction forms a photodiode being highly responsive to upper-level ultraviolet light radiation, said p-n junction has a shallow junction depth, said photodiode has a quantum efficiency greater than 30% at a wavelength of 0.4 μm, said photodiode is responsive to ultraviolet radiation having a wavelength smaller than 0.4 μm, said photodiode junction is formed by a GaP ion implantation, and said photodiode junction depth equals 0.15 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-13 | 1986-06-14 | 1986-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-13 | 1990-06-14 | 1990-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-13 | 1994-06-14 | 1994-12-14 | $7700.00 | Window Closed / Lapsed |