US4141756A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a gap UV photodiode by multiple ion-implantations
Assignee: Honeywell Inc
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Filing: 1977-10-14
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Granted: 1979-02-27
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Expires: 1997-10-14
Abstract
Abstract An ultraviolet sensitive photodiode is formed in a body of first conductivity type GaP. A region of second conductivity type with a graded impurity distribution is formed in the body, and a thin layer (preferably about 100A to 300A) is then removed from the front surface of the body. The removal of the thin layer significantly enhances the performance of the UV sensitive photodiode.
Inventors
- 👤 Alice M. Chiang
- 👤 Brian W. Denley
- 👤 Jeffrey C. Gelpey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:30
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/127; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
78 words
A method of forming an ultraviolet sensitive photodiode comprising: providing a body of first conductivity type GaP; forming a region of second conductivity type proximate a first surface of the body by introducing impurities into the body, the region of second conductivity type having a graded impurity distribution therein; removing a thin layer of the body from the first surface to form an ultraviolet radiation receiving surface; and making electrical contact to the region of second conductivity type.
Claim 2
Independent Claim
78 words
A method of forming an ultraviolet sensitive photodiode comprising: providing a body of first conductivity type GaP; forming a region of second conductivity type proximate a first surface of the body by introducing impurities into the body, the region of second conductivity type having a graded impurity distribution therein; removing a thin layer of the body from the first surface to form an ultraviolet radiation receiving surface; and making electrical contact to the region of second conductivity type.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein forming a region of second conductivity type comprises ion implanting impurities into the body.
Claim 4
Dependent Claim
19 words
The method of claim 2 wherein the thin layer has a thickness of between about 100A and about 300A.
Claim 5
Dependent Claim
21 words
The method of claim 3 wherein the first conductivity type is N type and the second conductivity type is P type.
Claim 6
Dependent Claim
30 words
The method of claim 4 wherein ion implanting comprises ion implanting acceptor ions in a plurality of implantations under different implantation conditions to produce a graded total acceptor impurity distribution.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-26 | 1982-08-28 | 1983-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-26 | 1986-08-28 | 1987-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-26 | 1990-08-28 | 1991-02-27 | $7700.00 | Window Closed / Lapsed |