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US4362385A Expired / Lapsed US ⏱️ 0.0 years remaining

Process and arrangement for copying masks on a workpiece with arrangement for correction of alignment errors

Assignee: MERCOTRUST AKTIENGESELLSCHAFT A CORP OF LIECOTENSTEIN
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Filing: 1980-02-07
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Granted: 1982-12-07
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Expires: 2000-02-07
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Abstract

Abstract In a process and an arrangement for the copying of masks on a workpiece, especially for the projection copying on a semiconductor substrate for the production of integrated circuitries, a mask pattern is imaged on respective different, predetermined areas of the workpiece by a shifting of the workpiece in the image plane. In order to increase the accuracy of the individual imagings, the alignment error between the image of the mask pattern and the predetermined area of the workpiece is determined during the imagings of the mask pattern on the workpiece. The predetermined value of the displacement of the workpiece to the area for a subsequent imaging or the position of the mask is corrected to the extent of the alignment error.

Inventors

  • 👤 Ernst Lobach

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 11:45
CPC Classifications
G; G03; G03F; G03F9/00; G03F9/70

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 200 words
In a method of copying a pattern of a mask member upon a semiconductor substrate member in the production of integrated circuits, whereby a semiconductor substrate member is disposed in an image plane of an objective having an optical axis and an image of said mask pattern is cast upon a first predetermined area of said substrate member during an exposure interval, said substrate member is then shifted in said image plane, a second predetermined area of substrate member is positioned along said optical axis and another image of said mask member is cast upon said substrate member, and the sequence is repeated until a multiplicity of predetermined areas of said substrate member have been exposed, the improvement wherein: (a) initiating prior to the conclusion of one of said exposure intervals a determination of the alignment error between the mask pattern and the respective predetermined area, said determination being carried out at least in part during one of said exposure intervals; and (b) adjusting the position of one of said members prior to a subsequent exposure to correct the relative positions of said members after the respective shift for said subsequent exposure by a value corresponding to said alignment error.
Claim 2
Dependent Claim 200 words
In a method of copying a pattern of a mask member upon a semiconductor substrate member in the production of integrated circuits, whereby a semiconductor substrate member is disposed in an image plane of an objective having an optical axis and an image of said mask pattern is cast upon a first predetermined area of said substrate member during an exposure interval, said substrate member is then shifted in said image plane, a second predetermined area of substrate member is positioned along said optical axis and another image of said mask member is cast upon said substrate member, and the sequence is repeated until a multiplicity of predetermined areas of said substrate member have been exposed, the improvement wherein: (a) initiating prior to the conclusion of one of said exposure intervals a determination of the alignment error between the mask pattern and the respective predetermined area, said determination being carried out at least in part during one of said exposure intervals; and (b) adjusting the position of one of said members prior to a subsequent exposure to correct the relative positions of said members after the respective shift for said subsequent exposure by a value corresponding to said alignment error.
Claim 3
Dependent Claim 45 words
The improvement defined in claim 1 wherein said alignment error is compared with a threshold value, and a predetermined value of the shift of said substrate member for the next exposure is corrected by said alignment error upon said alignment error exceeding said threshold value.
Claim 4
Dependent Claim 39 words
The improvement defined in claim 1 wherein said alignment error is determined after a predetermined number of exposures and the shift of the substrate member for the exposure following determination of the alignment error is corrected with said value.
Claim 5
Dependent Claim 40 words
The improvement defined in claim 1 wherein the alignment error is determined utilizing light of the exposure by comparing positions of alignment patterns of the mask member to positions of adjustment marks allocated to respective predetermined areas of the workpiece.
Claim 6
Dependent Claim 36 words
The improvement defined in claim 1 wherein said alignment error is determined by directing light from a source other than the light of said exposure onto adjustment patterns of said mask member and said substrate member.
Claim 7
Dependent Claim 37 words
The improvement defined in claim 1 further comprising the step of delaying the shift of the substrate member in step (b) for a period sufficient to enable completion of the determination of the error in step (a).
Claim 8
Dependent Claim 28 words
The improvement defined in claim 1 wherein, for successive determinations of alignment error, the adjustment value for different coordinates in the displacement of said substrate member are corrected.
Claim 9
Dependent Claim 18 words
The improvement defined in claim 1 wherein the position of said mask member is corrected in step (b).
Claim 10
Dependent Claim 25 words
The improvement defined in claim 8 wherein, after a limiting displacement of said mask member, the shift of said substrate is corrected in step (b).
Claim 11
Dependent Claim 19 words
The improvement defined in claim 1 wherein said determination is completed prior to the lapse of the exposure interval.

References Cited (Backward Citations)

US3955072A Cited
DE2246384C3 Cited
US3814845A Cited
US4052603A Cited
US4153371A Cited
US4251160A Cited
US4131804A Cited
DE2633297A1 Cited
US4127777A Cited
US4140392A Cited
US4171162A Cited
US4172656A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-12-06 1986-06-07 1986-12-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-12-06 1990-06-07 1990-12-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-12-06 1994-06-07 1994-12-07 $7700.00 Window Closed / Lapsed

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