Patent US4360897A successfully refreshed from Google Patents.
US4360897A
Expired / Lapsed
US
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Memory cell comprising tunnel diodes and field effect transistors
Assignee: University of Southern California
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Filing: 1979-11-15
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Granted: 1982-11-23
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Expires: 1999-11-15
Abstract
Abstract A static memory cell uses a micro-tunnel diode as load to a switching circuit involving field effect transistors. Another field effect transistor circuit is used as gate for read-address and read-out. The stationary current through the tunnel diode at logic zero is kept barely above the valley current to prevent aging. Close control of two threshold levels for the transistors in the memory cell is achieved by using the same dopant distribution in their channels in conjunction with a Schottky gate and a p-n junction gate.
Inventors
- 👤 Kurt Lehovec
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 19:24
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/39; H; H03; H03K; H03K17/00; H03K17/04; H03K17/041; H03K17/0412; H03K17/04123; H03K17/0416; H03K17/04163; H03K17/042; H03K17/04206; H03K19/00; H03K19/01; H03K19/017; H03K19/02; H03K19/14
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
281 words
An array of static memory cells, each cell comprising a tunnel diode inserted between a supply voltage and a first circuit, said supply voltage not much larger than the voltage drop across said tunnel diode pertaining to valley current flow so that the current through said tunnel diode when operating outside the tunnel regime never exceeds significantly the valley current, a variety of currents through said first circuit in response to sets of voltage signals applied at said first circuit through two circuit lines commonly referred to as word and bit lines, a first set of said signals such that the corresponding current withdrawn through said first circuit from the node between said tunnel diode and said first circuit is larger than the peak current of said tunnel diode, a second set of said signals such that the corresponding current through said first circuit is less than the valley current of said tunnel diode, the current through said first circuit being less than said peak current but higher than said valley current for any said set of voltage signals other than said first and second sets, a second circuit connected to said node between said tunnel diode and said first circuit, the impedance of said second circuit depending on voltage signals applied at said second circuit from said word and bit lines, said second circuit conducting only when a third set of said signals is applied, but non-conducting for any other set of said signals, the current through said conducting second circuit indicative of the voltage across said tunnel diode, thereby providing a read-out of the logic state of the memory cell, said first and second circuits comprsing field effect transistors.
Claim 2
Dependent Claim
281 words
An array of static memory cells, each cell comprising a tunnel diode inserted between a supply voltage and a first circuit, said supply voltage not much larger than the voltage drop across said tunnel diode pertaining to valley current flow so that the current through said tunnel diode when operating outside the tunnel regime never exceeds significantly the valley current, a variety of currents through said first circuit in response to sets of voltage signals applied at said first circuit through two circuit lines commonly referred to as word and bit lines, a first set of said signals such that the corresponding current withdrawn through said first circuit from the node between said tunnel diode and said first circuit is larger than the peak current of said tunnel diode, a second set of said signals such that the corresponding current through said first circuit is less than the valley current of said tunnel diode, the current through said first circuit being less than said peak current but higher than said valley current for any said set of voltage signals other than said first and second sets, a second circuit connected to said node between said tunnel diode and said first circuit, the impedance of said second circuit depending on voltage signals applied at said second circuit from said word and bit lines, said second circuit conducting only when a third set of said signals is applied, but non-conducting for any other set of said signals, the current through said conducting second circuit indicative of the voltage across said tunnel diode, thereby providing a read-out of the logic state of the memory cell, said first and second circuits comprsing field effect transistors.
Claim 3
Dependent Claim
76 words
The memory cell of the array of claim 1 whereby said first circuit comprises two depletion mode field effect transistors in parallel connection, the drains of said two field effect transistors connected to said node, and the sources of said field effect transistors connected to ground, the gate of one of said field effect transistors connected to said word line and the gate of the other of said field effect transistors connected to said bit line.
Claim 4
Dependent Claim
51 words
The memory cell of the array of claim 2 whereby said first circuit includes an AND-gate consisting of a dual gate enhancement mode transistor, with one gate of said dual gate transistor connected to said word line, and the other gate of said dual gate transistor connected to said bit line.
Claim 5
Dependent Claim
54 words
The memory cell of the array of claim 2 whereby said first circuit includes an AND-gate consisting of two enhancement mode transistors in series, the gate of one of said transistors of said AND-gate connected to said word line and the gate of said other transistor of said AND-gate connected to said bit line.
Claim 6
Dependent Claim
50 words
The memory cell of the array of claim 2 whereby said first circuit includes an enhancement mode transistor with one contact from the pair of gate and source contacts connected to said bit line, the other contact from said pair of gate and source contacts connected to said word line.
Claim 7
Dependent Claim
60 words
The memory cell of the array of claim 1 whereby said second circuit comprises a field effect transistor with said word line in circuit connection with one contact from the pair of gate and source contacts of said field effect transistor in said second circuit, and said bit line in circuit connection with said other one contact of said pair.
Claim 8
Dependent Claim
26 words
The memory cell of the array of claim 6 whereby said node is connected to the drain of said field effect transistor in said second circuit.
Claim 9
Dependent Claim
32 words
The memory cell of the array of claim 6 whereby a forward biased ordinary diode is inserted between said node and the drain of said field effect transistor in said second circuit.
Claim 10
Dependent Claim
268 words
The memory cell of the array of claim 1 whereby said first circuit comprises an OR-gate of two depletion mode field effect transistors, the drains of said two field effect transistors in circuit connection to said node, and the sources of said two field effect transistors in circuit connection with ground, the gate of one of said two field effect transistors connected to said word line, and the gate of the other of said two field effect transistors connected to said bit line, a third field effect transistor in said first circuit, with the drain of said third field effect transistor in circuit connection with said node, the gate of said third field effect transistor in circuit connection with one from the pair of said word and bit lines, and the source of said third field effect transistor in circuit connection with the other from the pair of said word and bit lines, said third field effect transistor being of the enhancement mode type, said second circuit comprising a fourth field effect transistor, said fourth field effect transistor of the enhancement mode type, the source of said fourth field effect transistor in circuit connection with one from the pair of said word and bit lines, and the gate of said fourth field effect transistor in circuit connection with the other from said pair of word and bit lines, the gate of said fourth field effect transistor in said second circuit in circuit connection with a different line from said pair of word and bit lines than the gate of said third field effect transistor in said first circuit.
Claim 11
Dependent Claim
25 words
The memory cell of the array of claim 1 whereby said node is connected to the gate of an enhancement field effect transistor in said
References Cited (Backward Citations)
US4242595A
Cited
US4300064A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-22 | 1986-05-24 | 1986-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-22 | 1990-05-24 | 1990-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-22 | 1994-05-24 | 1994-11-23 | $7700.00 | Window Closed / Lapsed |