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US4360702A
Expired / Lapsed
US
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Copper oxide/N-silicon heterojunction photovoltaic device
Assignee: BP Solar International LLC
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Filing: 1981-01-05
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Granted: 1982-11-23
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Expires: 2001-01-05
Abstract
Abstract A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu x O/n-Si heterojunction. The Cu x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.
Inventors
- 👤 Tom Feng
- 👤 Amal K. Ghosh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:33
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F71/00; H10F71/128; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
73 words
A photovoltaic heterojunction device comprising a relatively thick substrate layer of n-type silicon having a major area surface; a relatively thin layer of copper deposited onto said silicon surface and subsequently oxidized to form a layer of Cu x O where x is an integer being 1 or 2, said Cu x O layer forming a heterojunction to said silicon, and means making ohmic contact to said silicon and Cu x O layers.
Claim 2
Dependent Claim
73 words
A photovoltaic heterojunction device comprising a relatively thick substrate layer of n-type silicon having a major area surface; a relatively thin layer of copper deposited onto said silicon surface and subsequently oxidized to form a layer of Cu x O where x is an integer being 1 or 2, said Cu x O layer forming a heterojunction to said silicon, and means making ohmic contact to said silicon and Cu x O layers.
Claim 3
Dependent Claim
14 words
The heterojunction device of claim 1 wherein said silicon comprises n-type single crystal silicon.
Claim 4
Dependent Claim
24 words
The heterojunction device of claim 2 wherein said relatively thin layer of Cu ranges in thickness from about 30 A to about 2000 A.
Claim 5
Dependent Claim
17 words
The heterojunction device of claim 3 wherein said layer of Cu is about 500 A in thickness.
Claim 6
Dependent Claim
77 words
A solar cell device comprising: a n-type silicon wafer having a major area surface a layer of Cu x O deposited onto said surface forming a heterojunction to said silicon; means making ohmic contact to said silicon and said Cu x O whereupon radiating said solar cell with an equivalent of air mass on sunlight said solar cell has a photovoltaic short circuit current of about 9mA/cm 2 and an open circuit voltage of about 0.445 volts.
Claim 7
Dependent Claim
77 words
A solar cell device comprising: a n-type silicon wafer having a major area surface a layer of Cu x O deposited onto said surface forming a heterojunction to said silicon; means making ohmic contact to said silicon and said Cu x O whereupon radiating said solar cell with an equivalent of air mass on sunlight said solar cell has a photovoltaic short circuit current of about 9mA/cm 2 and an open circuit voltage of about 0.445 volts.
Claim 8
Dependent Claim
21 words
The device of claim 1 or 5 wherein said ohmic contact to the Cu x O layer comprises a grid electrode.
Claim 9
Dependent Claim
28 words
The device of claim 6 wherein said grid electrode comprises an initial region of titanium contacting said oxide and functioning to physically bond an overlying metal layer thereto.
Claim 10
Dependent Claim
24 words
The device of claim 1 or 5 wherein said ohmic contact to the Cu x O layer comprises a semi-transparent layer of electro-conductive material.
Claim 11
Dependent Claim
32 words
The device of claim 1 or 5 wherein said ohmic contact to the silicon comprises a layer of titanium contacting said silicon and functioning to physically bond an overlying metal layer thereto.
Claim 12
Independent Claim
39 words
A method of fabricating a photovoltaic heterojunction device, comprising the steps of: (a) depositing upon a substrate of n-type silicon a relatively thin layer of copper; and (b) subsequently oxidizing said copper layer to form an oxide of copper.
Claim 13
Independent Claim
39 words
A method of fabricating a photovoltaic heterojunction device, comprising the steps of: (a) depositing upon a substrate of n-type silicon a relatively thin layer of copper; and (b) subsequently oxidizing said copper layer to form an oxide of copper.
Claim 14
Dependent Claim
21 words
The method of claim 10, wherein said depositing step (a) comprises the step of thermally evaporating said copper in a vacuum.
Claim 15
Dependent Claim
25 words
The method of claim 10, wherein said oxidizing step (b) comprises the step of heating said silicon substrate in order to oxidize said deposited copper.
References Cited (Backward Citations)
US2537256A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-22 | 1986-05-24 | 1986-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-22 | 1990-05-24 | 1990-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-22 | 1994-05-24 | 1994-11-23 | $7700.00 | Window Closed / Lapsed |