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US4360393A Expired / Lapsed US ⏱️ 0.0 years remaining

Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates

Assignee: BP Solar International LLC
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Filing: 1980-12-18
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Granted: 1982-11-23
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Expires: 2000-12-18
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Abstract

Abstract Provision for a source of phosphorus dopant on a silicon wafer, for the subsequent formation of an electrical p-n junction, by the vapor deposition, at atmospheric pressure, of phosphoric acid to form an essentially continuous film on a silicon wafer, said wafer being at room temperature, and the firing of said film to form a phosphorus oxide-silicate-glass layer which will not interfere with any antireflective layer deposited thereon.

Inventors

  • 👤 Timothy D. Koval

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 05:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C30; C30B; C30B31/00; C30B31/02; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 74 words
A method of forming a phosphorus/silicon glass layer on the surface of a silicon substrate, comprising (a) providing liquid phosphoric acid, (b) vaporizing said phosphoric acid to a gasous form, (c) condensing said gaseous phosphoric acid on the surface of said silicon substrate to form a film on said substrate, and (d) heating said substrate and said film to form a phosphorus/silicon glass layer on said substrate and a P-N junction in said substrate.
Claim 2
Independent Claim 74 words
A method of forming a phosphorus/silicon glass layer on the surface of a silicon substrate, comprising (a) providing liquid phosphoric acid, (b) vaporizing said phosphoric acid to a gasous form, (c) condensing said gaseous phosphoric acid on the surface of said silicon substrate to form a film on said substrate, and (d) heating said substrate and said film to form a phosphorus/silicon glass layer on said substrate and a P-N junction in said substrate.
Claim 3
Dependent Claim 38 words
A method as claimed in claim 1, in which said gaseous phosphoric acid is formed by spraying said liquid phosphoric acid through a tube heated to a temperature in the range of about 400° C. to 800° C.
Claim 4
Dependent Claim 19 words
A method as claimed in claim 2, in which said gaseous phosphoric acid is carried by an inert gas.
Claim 5
Dependent Claim 24 words
A method as claimed in claim 3, in which said inert gas is selected from the group consisting of nitrogen, argon, helium and neon.
Claim 6
Dependent Claim 24 words
A method as claimed in claim 1, in which said gaseous phosphoric acid is maintained at about atmospheric pressure during condensation on said substrate.
Claim 7
Dependent Claim 35 words
A method as claimed in claim 1, in which said substrate and said film are heated to a temperature in the range of about 800° C. to about 900° C. to form said glass layer.
Claim 8
Dependent Claim 23 words
A method as claimed in claim 1, in which said phosphorus/silicon glass layer has a thickness of about 90° A to 200° A.
Claim 9
Dependent Claim 21 words
A method as claimed in claim 1, in which said liquid phosphoric acid is vaporized by spraying it with an atomizer.
Claim 10
Dependent Claim 25 words
A method as claimed in claim 8, in which said liquid phosphoric acid is sprayed through a zone heated to about 400° to 800° C.
Claim 11
Dependent Claim 25 words
A method as claimed in claim 1, in which said silicon substrate is subjected to gaseous phosphoric acid for about 45 seconds to 2 minutes.

References Cited (Backward Citations)

US3173802A Cited
US4206026A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-11-22 1986-05-24 1986-11-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-11-22 1990-05-24 1990-11-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-11-22 1994-05-24 1994-11-23 $7700.00 Window Closed / Lapsed

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