US4358785A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compression type semiconductor device
Assignee: Toshiba Corp
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Filing: 1980-03-04
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Granted: 1982-11-09
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Expires: 2000-03-04
Abstract
Abstract A compression type semiconductor device includes a semiconductor element; at least one metal plate having substantially upright edge surfaces, a planar contacting surface engaging a first surface of the semiconductor element and a continuous curved surface interconnecting the edge surfaces and the contacting surface; and a means for pressing the contacting surface of the metal plate against the first surface of the semiconductor element. The continuous curved surface of the metal plate is so formed that at each point on the periphery of the contacting surface at least one plane normal to the contacting surface intersects the curved surface in an arcuate curve which tangentially joins the contacting surface.
Inventors
- 👤 Katsuhiko Takigami
- 👤 Makoto Azuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:45
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/20; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
79 words
A compression type semiconductor device, comprising: a semiconductor element; at least one metal plate having substantially upright edge surfaces, a planar contacting surface engaging a first surface of the semiconductor element, and a continuous curved surface interconnecting said edge surfaces and said contacting surface, wherein at each point on the periphery of said contacting surface at least one plane normal to said contacting surface intersects said curved surface in an arcuate curve which tangentially joins said contacting surface; and
Claim 2
Dependent Claim
79 words
A compression type semiconductor device, comprising: a semiconductor element; at least one metal plate having substantially upright edge surfaces, a planar contacting surface engaging a first surface of the semiconductor element, and a continuous curved surface interconnecting said edge surfaces and said contacting surface, wherein at each point on the periphery of said contacting surface at least one plane normal to said contacting surface intersects said curved surface in an arcuate curve which tangentially joins said contacting surface; and
Claim 3
Dependent Claim
42 words
compression means including a metal stamp for pressing said contacting surface of said metal plate against said first suface of said semiconductor element; wherein the metal plate has a thermal expansion coefficient intermediate those of the semiconductor element and the metal stamp.
Claim 4
Dependent Claim
42 words
compression means including a metal stamp for pressing said contacting surface of said metal plate against said first suface of said semiconductor element; wherein the metal plate has a thermal expansion coefficient intermediate those of the semiconductor element and the metal stamp.
Claim 5
Dependent Claim
13 words
The device according to claim 1, wherein the metal plate is a disk.
Claim 6
Dependent Claim
25 words
The device according to claim 2, wherein said disk has radius R, and said arcuate curve is an arc having radius r such that r≧R(1-2√2/3).
Claim 7
Dependent Claim
13 words
The device according to claim 1, wherein the metal plate is a rectangle.
Claim 8
Dependent Claim
32 words
The device according to claim 4, wherein half the length of the shorter side of said rectangle is R, and said arcuate curve is an arc having radius r such that r≧R(1-2√2/3).
Claim 9
Dependent Claim
13 words
The device according to claim 1, wherein the metal plate is an annulus.
Claim 10
Dependent Claim
34 words
The device according to claim 6, wherein half the difference between the outer and inner radii of said annulus is R, and said arcuate curve is an arc having radius r such that r≧R(1-2√2/3).
Claim 11
Independent Claim
45 words
The device according to any one of claims 1 to 7, wherein the semiconductor element is a gate turn-off thyristor having a cathode electrode formed on a first side thereof and the metal plate is provided on said first side of said gate turn-off thyristor.
Claim 12
Independent Claim
28 words
The device according to any one of claims 1 to 7, wherein the metal plate is formed of a metal from the group consisting of molybdenum and tungsten.
Claim 13
Independent Claim
24 words
The device according to any one of claims 1 to 7, also including a solder layer between the metal plate and the metal stamp.
Claim 14
Independent Claim
25 words
The device according to any one of claims 1 to 7, also including a thin metal film between the semiconductor element and the metal plate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-08 | 1986-05-10 | 1986-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-08 | 1990-05-10 | 1990-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-08 | 1994-05-10 | 1994-11-09 | $7700.00 | Window Closed / Lapsed |