US4358339A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabrication of bubble domain device structures
Assignee: Boeing North American Inc
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Filing: 1980-06-06
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Granted: 1982-11-09
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Expires: 2000-06-06
Abstract
Abstract A method of fabricating a microelectronic circuit device on a substrate by forming a layer of electrically and thermally conductive material (13) on a surface of a substrate (10). Channels are then etched in the layer of conductive material (13) to form patterns of the conductive material which are delineated from the remainder of the layer of conductive material. The channels are filled with an electrically insulating material (21, 22, 23) so as to form a substantially planar surface layer on the substrate. Finally, a microelectronic circuit device (e.g., 25) is formed on the substantially planar surface.
Inventors
- 👤 Thomas R. Oeffinger
- 👤 Robert F. Bailey
- 👤 Tsutomu Kobayashi
- 👤 John P. Reekstin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:12
CPC Classifications
H; H01; H01F; H01F41/00; H01F41/32; H01F41/34; H01F10/00; H01F10/06; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/071; H10W20/092; H10W20/40; H10W70/00; H10W70/01; H10W70/05
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
115 words
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of a bias magnetic field comprising the steps of: forming a barrier layer composed of a dielectric glass on said substrate; forming a layer of electrically and thermally conductive material over said barrier layer and substantially the entire substrate; etching narrow grooves into said layer of electrically and thermally conductive material to said barrier layer to form a patterned arrangement; depositing a spacer layer of electrically nonconductive material of substantially uniform thickness over said layer of electrically and thermally conductive material; and depositing a layer of a magnetically operative material over said spacer layer.
Claim 2
Independent Claim
115 words
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of a bias magnetic field comprising the steps of: forming a barrier layer composed of a dielectric glass on said substrate; forming a layer of electrically and thermally conductive material over said barrier layer and substantially the entire substrate; etching narrow grooves into said layer of electrically and thermally conductive material to said barrier layer to form a patterned arrangement; depositing a spacer layer of electrically nonconductive material of substantially uniform thickness over said layer of electrically and thermally conductive material; and depositing a layer of a magnetically operative material over said spacer layer.
Claim 3
Dependent Claim
15 words
A method of defined in claim 1, wherein said barrier layer comprises an optical glass.
Claim 4
Dependent Claim
17 words
A method as defined in claim 1, wherein said layer of conductive material comprises an aluminum-copper alloy.
Claim 5
Dependent Claim
15 words
A method as defined in claim 1 wherein said spacer layer comprises an optical glass.
Claim 6
Dependent Claim
15 words
A method as defined in claim 1, wherein said magnetically operative layer comprises nickel iron.
Claim 7
Dependent Claim
17 words
A method as defined in claim 1, wherein said step of depositing a barrier layer comprises sputtering.
Claim 8
Dependent Claim
17 words
A method as defined in claim 1, wherein said step of depositing a barrier layer comprises evaporation.
Claim 9
Dependent Claim
26 words
A method as defined in claim 1 wherein said layer of electrically and thermally conductive material is deposited at a thickness between 1000 and 6000 Angstroms.
Claim 10
Dependent Claim
22 words
A method as defined in claim 1 wherein said etching step comprises ion milling said layer of electrically and thermally conductive material.
Claim 11
Independent Claim
137 words
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of a bias magnetic field comprising the steps of: forming an isolation layer composed of a dielectric glass on said substrate; forming a layer of electrically and thermally conductive material over said isolation layer and substantially the entire substrate; etching narrow grooves into said layer of electrically and thermally conductive material to said isolation layer to form a patterned arrangement; depositing a layer of electrically nonconductive material in said grooves such that the top surface of said layer of nonconductive material is coplanar with the top surface of said layer of conductive material; and forming microelectronic devices comprising magnetic operative elements on the surface of said layer of conductive material and said layer of nonconductive material.
Claim 12
Independent Claim
137 words
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of a bias magnetic field comprising the steps of: forming an isolation layer composed of a dielectric glass on said substrate; forming a layer of electrically and thermally conductive material over said isolation layer and substantially the entire substrate; etching narrow grooves into said layer of electrically and thermally conductive material to said isolation layer to form a patterned arrangement; depositing a layer of electrically nonconductive material in said grooves such that the top surface of said layer of nonconductive material is coplanar with the top surface of said layer of conductive material; and forming microelectronic devices comprising magnetic operative elements on the surface of said layer of conductive material and said layer of nonconductive material.
Claim 13
Dependent Claim
19 words
The method recited in claim 10 including the step of forming a passivation layer on said microelectronic circuit device.
Claim 14
Dependent Claim
15 words
A method as defined in claim 10 wherein said dielectric glass comprises an optical glass.
Claim 15
Dependent Claim
21 words
A method as defined in claim 10 wherein said layer of electrically and thermally conductive material comprises an aluminum copper alloy.
Claim 16
Dependent Claim
26 words
A method as defined in claim 10 wherein said layer of electrically and thermally conductive material is deposited at a thickness between 1000 and 6000 Angstroms.
Claim 17
Dependent Claim
22 words
A method as defined in claim 10 wherein said etching step comprises ion milling said layer of electrically and thermally conductive material.
Claim 18
Dependent Claim
23 words
A method as defined in claim 10, wherein said step of depositing a layer of electrically nonconductive material comprises depositing an optical glass.
Claim 19
Independent Claim
100 words
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of bias magnetic field comprising steps of: forming an isolation layer composed of a dielectric glass on said substrate; forming a layer of electrically and thermally conductive material over said isolation layer and substantially the entire substrate; etching said layer of electrically and thermally conductive material to form first and second spaced apart regions, said first region extending over substantially the entire substrate and functioning as a heat sink; and forming microelectronic devices on said layer of conductive material.
Claim 20
Independent Claim
100 words
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of bias magnetic field comprising steps of: forming an isolation layer composed of a dielectric glass on said substrate; forming a layer of electrically and thermally conductive material over said isolation layer and substantially the entire substrate; etching said layer of electrically and thermally conductive material to form first and second spaced apart regions, said first region extending over substantially the entire substrate and functioning as a heat sink; and forming microelectronic devices on said layer of conductive material.
Claim 21
Dependent Claim
21 words
A method as defined in claim 17 wherein said microelectronic devices comprise permalloy elements deposited over said layer of conductive material.
Claim 22
Dependent Claim
15 words
A method as defined in claim 17 wherein said dielectric glass comprises an optical glass.
Claim 23
Dependent Claim
26 words
A method as defined in claim 17 wherein said layer of electrically and thermally conductive material is deposited at a thickness between 1000 and 6000 Angstroms.
Claim 24
Dependent Claim
30 words
A method as defined in claim 17 wherein said step of etching said layer of electrically and thermally conductive material comprises etching completely through said layer to said isolation layer.
Claim 25
Dependent Claim
48 words
A method as defined in claim 17 further comprising the step of depositing a layer of electrically nonconductive material in said grooves such that the top surface of said layer of nonconductive material is coplanar with the top surface of said layer of electrically and thermally conductive material.
Claim 26
Dependent Claim
18 words
The method as defined in claim 22 wherein said layer of electrically nonconductive material is an optical glass.
Claim 27
Independent Claim
124 words
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of bias magnetic field comprising steps of: forming a barrier layer composed of a dielectric glass on said substrate; forming a layer of electrically and thermally conductive material over said barrier layer and substantially the entire substrate; etching said layer of electrically and thermally conductive material to form first and second spaced apart regions, said first region extending over substantially the entire substrate and functioning as a heat sink; depositing a spacer layer of electrically nonconductive material of substantially uniform thickness over said layer of electrically and thermally conductive material; and depositing a layer of a magnetically operative material over said spacer layer.
Claim 28
Independent Claim
124 words
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of bias magnetic field comprising steps of: forming a barrier layer composed of a dielectric glass on said substrate; forming a layer of electrically and thermally conductive material over said barrier layer and substantially the entire substrate; etching said layer of electrically and thermally conductive material to form first and second spaced apart regions, said first region extending over substantially the entire substrate and functioning as a heat sink; depositing a spacer layer of electrically nonconductive material of substantially uniform thickness over said layer of electrically and thermally conductive material; and depositing a layer of a magnetically operative material over said spacer layer.
Claim 29
Dependent Claim
21 words
A method as defined in claim 24 wherein said microelectronic devices comprise permalloy elements deposited over said layer of conductive material.
Claim 30
Dependent Claim
15 words
A method as defined in claim 24 wherein said dielectric glass comprises an optical glass.
Claim 31
Dependent Claim
26 words
A method as defined in claim 24 wherein said layer of electrically and thermally conductive material is deposited at a thickness between 1000 and 6000 Angstroms.
Claim 32
Dependent Claim
30 words
A method as defined in claim 24 wherein said step of etching said layer of electrically and thermally conductive material comprises etching completely through said layer to said barrier layer.
Claim 33
Dependent Claim
18 words
The method as defined in claim 24 wherein said layer of electrically nonconductive material is an optical glass.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-08 | 1986-05-10 | 1986-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-08 | 1990-05-10 | 1990-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-08 | 1994-05-10 | 1994-11-09 | $7700.00 | Window Closed / Lapsed |