Patent US4357369A successfully refreshed from Google Patents.
US4357369A
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Method of plasma etching a substrate
Assignee: Intersil Corp
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Filing: 1981-11-10
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Granted: 1982-11-02
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Expires: 2001-11-10
Abstract
Abstract A method of selectively removing a portion of a layer of material on a substrate by oxygen plasma etching utilizing a mask of a resist material comprising a poly(silane sulfone) copolymer.
Inventors
- 👤 Kurt B. Kilichowski
- 👤 Thomas R. Pampalone
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:02
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; C; C23; C23F; C23F4/00; G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/0758; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
84 words
In a method of selectively removing portions of a layer of material from a surface of a substrate by oxygen plasma etching which comprises forming on the surface of said layer a predetermined pattern of a resist material resistant to oxygen plasma etching and etching that portions of said layer not covered by said resist material, the improvement which comprises using as said resist material a copolymer having repeating units represented by the formula ##STR2## wherein R is alkyl and n is an integer.
Claim 2
Dependent Claim
84 words
In a method of selectively removing portions of a layer of material from a surface of a substrate by oxygen plasma etching which comprises forming on the surface of said layer a predetermined pattern of a resist material resistant to oxygen plasma etching and etching that portions of said layer not covered by said resist material, the improvement which comprises using as said resist material a copolymer having repeating units represented by the formula ##STR2## wherein R is alkyl and n is an integer.
Claim 3
Dependent Claim
12 words
A method in accordance with claim 1, wherein R is lower alkyl.
Claim 4
Dependent Claim
11 words
A method in accordance with claim 2, wherein R is methyl.
Claim 5
Dependent Claim
55 words
A method in accordance with claim 1, wherein said predetermined pattern of resist material is formed by coating said layer with a solution of said copolymer in a suitable solvent, drying said coating to form a film, irradiating selected portions of said film and developing the irradiated portions of the film with a suitable developer.
Claim 6
Dependent Claim
16 words
A method in accordance with claim 4, wherein said film is irradiated with an electron beam.
Claim 7
Dependent Claim
17 words
A method in accordance with claim 4, wherein said film is irradiated with a modulated electron beam.
Claim 8
Dependent Claim
15 words
A method in accordance with claim 4, wherein said film is baked prior to irradiation.
Claim 9
Independent Claim
160 words
A method of forming an assembly comprising a substrate having thereon two layers of aluminum separated by a layer of insulating dielectric material wherein the layer of insulating dielectric material has vias in which there is contact between said layers of aluminum comprising: (a) forming a first layer of aluminum on said substrate; (b) forming a layer of insulating dielectric material on said first aluminum layer; (c) forming a pattern of a resist material on said insulating dielectric layer, said resist material comprising a copolymer having repeating units represented by the formula ##STR3## wherein R is alkyl and n is an integer; (d) removing the portions of said insulating layer not protected by said resist material with oxygen plasma etch thereby forming vias in said insulating layer; (e) removing said resist material from the surface of said insulating layer; and (f) forming a second layer of aluminum thereover so that there is contact between said aluminum layers in said vias.
Claim 10
Independent Claim
160 words
A method of forming an assembly comprising a substrate having thereon two layers of aluminum separated by a layer of insulating dielectric material wherein the layer of insulating dielectric material has vias in which there is contact between said layers of aluminum comprising: (a) forming a first layer of aluminum on said substrate; (b) forming a layer of insulating dielectric material on said first aluminum layer; (c) forming a pattern of a resist material on said insulating dielectric layer, said resist material comprising a copolymer having repeating units represented by the formula ##STR3## wherein R is alkyl and n is an integer; (d) removing the portions of said insulating layer not protected by said resist material with oxygen plasma etch thereby forming vias in said insulating layer; (e) removing said resist material from the surface of said insulating layer; and (f) forming a second layer of aluminum thereover so that there is contact between said aluminum layers in said vias.
Claim 11
Dependent Claim
14 words
A method in accordance with claim 8, wherein said insulating dielectric layer is polyimide.
Claim 12
Dependent Claim
12 words
A method in accordance with claim 8, wherein R is lower alkyl.
Claim 13
Dependent Claim
11 words
A method in accordance with claim 10, wherein R is methyl.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1985-11-01 | 1986-05-03 | 1986-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-01 | 1990-05-03 | 1990-11-02 | $3760.00 | Window Closed / Lapsed |
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