Voltage divider circuits

Claim 1

A voltage divider comprising: a complementary symmetry inverter comprised of a first P-channel insulated-gate field-effect transistor (IGFET) and a first N-channel IGFET, each IGFET having a gate electrode, and source and drain electrodes defining the ends of a conduction path; first and second power terminals for the application therebetween of an operating voltage to be divided, the voltage to be applied to said first terminal being positive relative to the voltage to be applied to said second terminal; means connecting the source electrode of said first P-IGFET to said first power terminal and means connecting the source electrode of said first N-IGFET to said second power terminal; a complementary symmetry voltage follower stage comprising first and second output transistors of P and N conductivity type, respectively, each output transistor having an input and an output and a control electrode; means connecting the drain electrodes of said first and second IGFETs to the control electrodes of said first and second output transistors; means for applying relatively positive and relatively negative operating potentials to the output electrodes of said first and second output transistors, respectively; means connecting said input electrodes of said first and second output transistors to an output terminal for producing thereat a voltage which is a portion of the potential applied between said first and second power terminals; and negligible impedance means connecting said output terminal to the gate electrodes of said first and second IGFETs for feeding back the voltage at said output terminal to said gate electrodes of said first and second IGFETs and for biasing said inverter in the linear portion of its transfer characteristic.