Patent US4354104A successfully refreshed from Google Patents.
US4354104A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state image pickup device
Assignee: Panasonic Holdings Corp
•
Filing: 1980-05-06
•
Granted: 1982-10-12
•
Expires: 2000-05-06
Abstract
Abstract In a solid-state image pickup device of the type in which a photoconductive substance is formed as a photosensor on a scanning device consisting of charge-transfer elements or MOS matrix elements, light shielding means are provided in order to optically shield the boundaries or spacing between first electrodes each of which represents a picture element and which electrically couples between the scanning device and the photosensor, whereby a high resolution can be obtained and concurrently effects of blooming can be remarkably improved.
Inventors
- 👤 Takao Chikamura
- 👤 Shinji Fujiwara
- 👤 Masakazu Fukai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:05
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F39/192; H10F39/194; H10F39/80; H10F39/805; H10F39/8053; H10F39/8057
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
73 words
A solid-state image pickup device characterized by the provision of (a) a substrate, (b) at least two or more first electrodes of unit cells which are formed on said substrate and electrically isolated from each other, (c) a photoconductive layer formed over said substrate and over said first electrodes, (d) a second electrode formed over said photoconductive layer, and (e) light shielding means formed above said substrate upon which falls the incident light.
Claim 2
Dependent Claim
73 words
A solid-state image pickup device characterized by the provision of (a) a substrate, (b) at least two or more first electrodes of unit cells which are formed on said substrate and electrically isolated from each other, (c) a photoconductive layer formed over said substrate and over said first electrodes, (d) a second electrode formed over said photoconductive layer, and (e) light shielding means formed above said substrate upon which falls the incident light.
Claim 3
Dependent Claim
135 words
A solid-state image pickup device as set forth in claim 1 or 6 further characterized in that said substrate is of a p- or n-type, an n- or p-type region formed in the bulk of said p- or n-type substrate, a charge-transfer element or X-Y switch for transferring the charge signal formed in the bulk of said p- or n-type substrate and physically isolated from said n- or p-type region, a gate electrode for reading out the packet of charge from said n- or p-type region into said charge-transfer element or X-Y switching element, an insulating layer formed over said p- or n-type substrate and said gate electrode, said insulating layer having a contact window for contact with said n- or p-region, and said first electrode is electrically connected to said n- or p-type region.
Claim 4
Dependent Claim
27 words
A solid-state image pickup device as set forth in claim 2 further characterized in that said light shielding means are formed or mounted on said second electrode.
Claim 5
Dependent Claim
33 words
A solid-state image pickup device as set forth in claim 2 further characterized in that said light shielding means are formed or mounted on said second electrode with a transparent substance interposed therebetween.
Claim 6
Dependent Claim
33 words
A solid-state image pickup device as set forth in claim 2 further characterized in that said light shielding means are formed or mounted on said second electrode with optical color filters interposed therebetween.
Claim 7
Dependent Claim
74 words
A solid-state image pickup device characterized by the provision of (a) a substrate, (b) at least two or more first electrodes of unit cells which are formed on said substrate and electrically isolated from each other, (c) a photoconductive layer formed over said substrate and over said first electrodes, (d) a second electrode formed over said photoconductive layer, and (e) light shielding means formed above said second electrode upon which falls the incident light.
Claim 8
Dependent Claim
74 words
A solid-state image pickup device characterized by the provision of (a) a substrate, (b) at least two or more first electrodes of unit cells which are formed on said substrate and electrically isolated from each other, (c) a photoconductive layer formed over said substrate and over said first electrodes, (d) a second electrode formed over said photoconductive layer, and (e) light shielding means formed above said second electrode upon which falls the incident light.
Claim 9
Dependent Claim
46 words
A solid-state image pickup device according to claim 1 or 6, wherein said substrate includes an array of field effect transistors having gate electrodes, said light shielding means comprising a grid the opaque portions of which are in alignment with the regions between adjacent gate electrodes.
References Cited (Backward Citations)
US3858233A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-10-11 | 1986-04-12 | 1986-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-10-11 | 1990-04-12 | 1990-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-10-11 | 1994-04-12 | 1994-10-12 | $7700.00 | Window Closed / Lapsed |