Patent US4351677A successfully refreshed from Google Patents.
US4351677A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device having aluminum diffused semiconductor substrate
Assignee: Hitachi Ltd
•
Filing: 1980-07-10
•
Granted: 1982-09-28
•
Expires: 2000-07-10
Abstract
Abstract A method of manufacturing a semiconductor device of the type wherein aluminum layers are selectively deposited on a major surface of a silicon semiconductor substrate and thereafter aluminum is selectively diffused into the silicon semiconductor substrate by means of heat treatment. SiO 2 mask is selectively formed on at least one major surface of the silicon semiconductor substrate, then aluminum is deposited onto the major surface being close to but separated from the SiO 2 mask, subsequently the silicon semiconductor substrate is subjected to a heat treatment to selectively diffuse the aluminum into the silicon semiconductor substrate. The SiO 2 mask which is formed before the heat treatment prevents impurity atoms from autodoping through the SiO 2 mask. No cracking occurs in the SiO 2 mask because the aluminum diffusion source is apart from the periphery of the SiO 2 mask.
Inventors
- 👤 Yasuhiro Mochizuki
- 👤 Yoko Wakui
- 👤 Hiroaki Hachino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:50
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
116 words
A method of selectively diffusing aluminum into a silicon semiconductor substrate comprising the steps of: (a) selectively forming a layer of silicon dioxide to provide a mask pattern having at least one opening therein over a major surface of a silicon semiconductor substrate having an N-conductivity type, (b) depositing aluminum onto said major surface of said silicon semiconductor substrate so that said aluminum is spaced apart from said layer of silicon dioxide, and (c) subjecting said substrate to a heat treatment for selectively diffusing said aluminum into selected regions of said silicon semiconductor substrate; said aluminum being spaced from said layer of silicon dioxide sufficiently to avoid diffusion of the aluminum into said silicon dioxide layer.
Claim 2
Independent Claim
116 words
A method of selectively diffusing aluminum into a silicon semiconductor substrate comprising the steps of: (a) selectively forming a layer of silicon dioxide to provide a mask pattern having at least one opening therein over a major surface of a silicon semiconductor substrate having an N-conductivity type, (b) depositing aluminum onto said major surface of said silicon semiconductor substrate so that said aluminum is spaced apart from said layer of silicon dioxide, and (c) subjecting said substrate to a heat treatment for selectively diffusing said aluminum into selected regions of said silicon semiconductor substrate; said aluminum being spaced from said layer of silicon dioxide sufficiently to avoid diffusion of the aluminum into said silicon dioxide layer.
Claim 3
Dependent Claim
25 words
A method as claimed in claim 1, wherein said aluminum is deposited into a recess formed in said major surface of said silicon semiconductor substrate.
Claim 4
Dependent Claim
53 words
A method as claimed in claim 1, wherein said step of selectively diffusing the aluminum is carried out with a flow of a mixed gas which contains an oxygen gas in an amount to form a non-crystallized silicon dioxide film by oxidizing said silicon semiconductor substrate at a portion adjacent to said aluminum.
Claim 5
Independent Claim
150 words
A method of selectively diffusing aluminum into a silicon semiconductor substrate comprising the steps of: (a) selectively forming a layer of silicon dioxide to provide a mask pattern having at least one opening therein over a major surface of a silicon semiconductor substrate, (b) selectively doping impurity atoms which modify a conductivity type of said silicon semiconductor substrate from a portion free of said layer of silicon dioxide on said major surface into the substrate, (c) depositing aluminum onto said major surface of said silicon semiconductor substrate so that said aluminium is spaced apart from a periphery of said layer of silicon dioxide, and (d) subjecting said substrate to a heat treatment for selectively diffusing said aluminum into said silicon semiconductor substrate; said aluminum being spaced sufficiently from the periphery of said silicon dioxide that aluminum is prevented from diffusing into said layer of silicon dioxide during said heat treatment.
Claim 6
Independent Claim
150 words
A method of selectively diffusing aluminum into a silicon semiconductor substrate comprising the steps of: (a) selectively forming a layer of silicon dioxide to provide a mask pattern having at least one opening therein over a major surface of a silicon semiconductor substrate, (b) selectively doping impurity atoms which modify a conductivity type of said silicon semiconductor substrate from a portion free of said layer of silicon dioxide on said major surface into the substrate, (c) depositing aluminum onto said major surface of said silicon semiconductor substrate so that said aluminium is spaced apart from a periphery of said layer of silicon dioxide, and (d) subjecting said substrate to a heat treatment for selectively diffusing said aluminum into said silicon semiconductor substrate; said aluminum being spaced sufficiently from the periphery of said silicon dioxide that aluminum is prevented from diffusing into said layer of silicon dioxide during said heat treatment.
Claim 7
Dependent Claim
51 words
A method as claimed in claim 4, which further comprises: after said heat treatment, doping said impurity atoms into an opposite major surface of said substrate so as to form a layer of P-conductivity type, whereby the region formed by selectively diffusing aluminum is contiguous to said layer of P-conductivity type.
Claim 8
Dependent Claim
28 words
A method as claimed in claim 1 or claim 4, wherein said aluminum is spaced apart from said layer of silicon dioxide by distance of about 2 μm.
References Cited (Backward Citations)
US4040878A
Cited
US4099997A
Cited
US4050967A
Cited
US4066485A
Cited
US4154632A
Cited
US4188245A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-27 | 1986-03-29 | 1986-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-27 | 1990-03-29 | 1990-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-27 | 1994-03-29 | 1994-09-28 | $7700.00 | Window Closed / Lapsed |